NTE2991 MOSFET NChannel, Enhancement Mode High Speed Switch

Features: D Ultra Low OnResistance D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 10V) TC = +25C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 390A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W/C GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Single Pulsed Avalanche Energy (IAS = 62A, L = 138H, Note 3), EAS . . . . . . . . . . . . . . . . . 264mJ Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62A Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +175C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300C Maximum Thermal Resistance: JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75C/W JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Typical Thermal Resistance, CasetoSink (Flat, greased surface), RthCS . . . . . . . . . . . . 0.50C/W Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. This is a calculated value limited to TJ = +175C. Note 4. ISD 62A, di/dt 207A/s, VDD V(BR)DSS, TJ +175C.

Electrical Characteristics: (TJ = +25C unless otherwise specified)

Parameter DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Static DrainSource ON Resistance Gate Threshold Voltage Forward Transconductance DraintoSource Leakage Current Symbol BVDSS Test Conditions VGS = 0V, ID = 250A Min 55 Typ 0.057 14 101 50 65 4.5 7.5 3247 781 211 Max Unit V

V(BR)DSS/ Reference to +25C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss IS ISM VSD trr Qrr ton (Body Diode) (Body Diode) Note 2 TJ = +25C, IS = 62A, VGS = 0V, Note 5 TJ = +25C, IF = 62A, di/dt = 100A/s, Note 5 Between lead, 6mm (0.25) from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz VDD = 28V, ID = 62A, RG = 4.5, VGS = 10V, Note 5 VGS = 10V, ID = 62A, Note 5 VDS = VGS, ID = 250A VDS = 25V, ID = 62A, Note 5 VDS = 55V, VGS = 0 VDS = 44V, VGS = 0V, TC = +150C VGS = 20V VGS = 20V VGS = 10V, ID = 62A, VDS = 44V

2.0 44

8.0 4.0 25 250 100 100 146 35 54

V/C
V mhos A A nA nA nC nC nC ns ns ns ns nH nH pF pF pF

GateSource Leakage Forward GateSource Leakage Reverse Total Gate Charge GateSource Charge GateDrain (Miller) Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

SourceDrain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward TurnOn Time 69 143 110 390 1.3 104 215 A A V ns C

Intrinsic turnon time is neglegible (turnon is dominated by LS + LD)

Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 5. Pulse Width 400s, Duty Cycle 2%.

.420 (10.67) Max

.110 (2.79)

.147 (3.75) Dia Max

.500 (12.7) Max

.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max

Gate .100 (2.54)

Source Drain/Tab