Memory eects in magnetoresistance setup using Ge crystal

Sambit Bikas Pal (06MS03), Aabhaas Vineet Mallik (06MS09), Arijit Haldar (06MS31)
Inspired by the hysteresis observed in the magnetoresistance curve in our lab course experiment, here we have tried to study memory eects in magnetoresistance of a Germanium crystal in some detail.

I. INTRODUCTION

Some materials undergo a change in their electrical resistance when subjected to an external magnetic eld. This eect is known as magnetoresistance. This is due to the fact that the drift velocity of all charge carriers are not the same. In the presence of magnetic eld, the Hall voltage compensates the Lorentz force on the charge carriers moving with average velocity. Slower carriers will be over compensated, while faster carriers will be undercompensated. As a result of this, the carriers do not move in the direction of the applied electric eld. Consequently the mean free path of the electrons decreases, resulting in greater electrical resistance.

FIG. 1 Qualitative description of magnetoresistance

Magnetoresistance increases with the increase of magnetic eld. For a semiconductor it is expected that if the magnetoresistance versus magnetic eld is plotted, once for increasing magnetic eld and then for decreasing magnetic eld, the two curves should overlap. In other words a semiconductor crystal is not expected to show memory eect. However a previous experiment on magnetoresistance using a Ge crystal exhibited memory.

FIG. 2 Curve obtained initially

Typeset by REVTEX

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II. EXPERIMENTAL SETUP

The setup consisted of the following equipments. p-type Ge crystal. Four probe
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method for measuring resistance.

Constant current source and digital voltmeter for four probe. Electromagnet Constant current source for electromagnet. Gauss-meter

III. EXPERIMENTAL PROCEDURE

In this experiment we have measured the transverse magnetoresistance of a Ge crystal using four probe method. The magnetic eld was gradually increased initially from 0 to the maximum value of 4 kgauss and brought back to 0 again. To see the behaviour of the curve over a full cycle, the sample was then subjected to an initial magnetic eld of 4kgauss which was gradually brought down to -4kgauss. The eld was then restored back to 4kgauss. The process was then repeated over multiple cycles. We also checked whether in the absence of a magnetic eld, the sample recovers, that is whether its magnetoresistance returns back to its nal value.

IV. RESULTS A. Curves showing memory eects.

The plots of magnetoresistance vs magnetic eld has been given below.

FIG. 3 Memory eect over a half cycle, there is a clear distinction between the initial and nal value.

It consists of four collinear spring loaded probes. The two outer carry the current, while the voltage is measured across the two inner probes. This prevents the error due to contact resistance, which is very important for semiconductors.

FIG. 4 Memory eect over a full cycle, deviation from initial value is twice that of half cycle. This indicates that the eect is linear.

FIG. 5 Memory eect over a multiple cycles. Discontinuous jumps can be seen in the curves, hinting towards some kind of discrete states in the system.

FIG. 6 Recovery curve. Sample recovers after 25min

FIG. 7 Recovery curve. Value hovers around an intermediate level and then returns back to initial value. Again hinting towards intermediate states in the system.

B. Curves showing recovery V. DISCUSSIONS AND CONCLUSIONS

1. The magnetoresistance graphs given above have magnetic eld on the X-axis and not the coil current and yet the presence of memory in the system can be observed. Hence we can safely conclude that the memory observed in the magnetoresistance curve is not because of the hysteresis of core material in the electromagnet. 2. In Fig 5 we see that there are discrete jumps between three distinct levels, strongly indicating presence of quantum states in the system. This is consistent with the band structure of crystals. 3. From point (1) and (2) we can conclude that within the scope of this experiment the given Ge crystal is the prime source of the observed memory eect. To establish this even rmly we would like to repeat the experiment with dierent Ge crystals, pure and with dierent concentrations of controlled impurities (dopants). 4. Some of the possible causes of memory in the magnetoresistance of the crystal may be: 4.1. Some metastable (mean life 30 mins) excitations in the crystal may possible because of the magnetic and electric elds to which the crystal is exposed during the experiment (Compare with Phosphorescence). But such excitations would decay gradually and not abruptly as is the case here. So, we may discard this idea. 4.2. Some magnetic impurities may be present in the crystal which may be capable of inducing some sort of phase transition in the crystal in presence of magnetic eld, eecting the conductivity. Such a process may explain the abrupt transition in resistance. 4.3. This may also well be because of some unknown eects at the contact points of the crystal and the four probe.