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DATA SHEET

MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS FIELD EFFECT TRANSISTOR
2SK3053
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

!

DESCRIPTION

ORDERING INFORMATION

The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments.

 

PART NUMBER

PACKAGE

 

2SK3053

Isolated TO-220

 

(Isolated TO-220)

VDSS

60

V

V DSS 60 V

VGSS(AC)

±20

V

VGSS(DC)

+20, 10

V

ID(DC)

±25

A

ID(pulse)

±75

A

PT

30

W

PT

2.0

W

Tch

150

°C

Tstg

–55 to +150

°C

IAS

12.5

A

EAS

15.6

mJ

FEATURES

Low On-State Resistance RDS(on)1 = 45 mMAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mMAX. (VGS = 4.0 V, ID = 13 A)

Low Ciss : Ciss = 790 pF TYP.

Built-in Gate Protection Diode

Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

Gate to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (Pulse) Note1

Total Power Dissipation (TC = 25°C)

Total Power Dissipation (TA = 25°C)

Channel Temperature

Storage Temperature

Single Avalanche Current Note2

Single Avalanche Energy Note2

Notes 1. PW 10 µs, Duty cycle 1 %

2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 , VGS = 20 V 0 V

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D12912EJ3V0DS00 (3rd edition) Date Published May 2001 NS CP(K) Printed in Japan

The mark !!!! shows major revised points.

©

Date Published May 2001 NS CP(K) Printed in Japan The mark ! ! ! ! shows

1999, 2000

2SK3053
2SK3053
2SK3053

2SK3053

!

!

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Drain to Source On-state Resistance

RDS(on)1

VGS = 10 V, ID = 13 A

 

28

45

m

RDS(on)2

VGS = 4.0 V, ID = 13 A

 

46

70

m

Gate to Source Cut-off Voltage

VGS(off)

VDS = 10 V, ID = 1 mA

1.0

1.6

2.0

V

Forward Transfer Admittance

 

| yfs |VDS = 10 V, ID = 13 A

8.0

16

 

S

Drain Leakage Current

IDSS

VDS = 60 V, VGS = 0 V

   

10

µA

Gate to Source Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

   

±10

µA

Input Capacitance

Ciss

VDS = 10 V

 

790

 

pF

Output Capacitance

Coss

VGS = 0 V

 

240

 

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

 

100

 

pF

Turn-on Delay Time

td(on)

ID = 13 A

 

20

 

ns

Rise Time

tr

VGS = 10 V

 

200

 

ns

Turn-off Delay Time

td(off)

VDD = 30 V

 

65

 

ns

Fall Time

tf

RG = 10

 

95

 

ns

Total Gate Charge

QG

ID = 25 A

 

20

 

nC

Gate to Source Charge

QGS

VDD = 48 V

 

3.0

 

nC

Gate to Drain Charge

QGD

VGS = 10 V

 

6.5

 

nC

Body Diode Forward Voltage

VF(S-D)

IF = 25 A, VGS = 0 V

 

1.0

 

V

Reverse Recovery Time

trr

IF = 25 A, VGS = 0 V

 

40

 

ns

Reverse Recovery Charge

Qrr

di/dt = 100 A/µs

 

45

 

nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T. L RG = 25 Ω PG. 50 Ω VDD VGS = 20 → 0
D.U.T.
L
RG = 25 Ω
PG.
50 Ω
VDD
VGS = 20 → 0 V
BVDSS
IAS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA RL PG. 50 Ω VDD
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD

2

! TEST CIRCUIT 2 SWITCHING TIME

D.U.T. RL RG PG. VDD VGS 0 τ
D.U.T.
RL
RG
PG.
VDD
VGS
0
τ

τ = 1 µs Duty Cycle 1 %

Data Sheet D12912EJ3V0DS

VGS 90 % VGS 10 % Wave Form 0 ID 90 % 90 % ID
VGS
90
%
VGS
10
%
Wave Form
0
ID
90 %
90
%
ID
10 %
ID
10
%
0
Wave Form
tr
td(on)
td(off)
tf
ton
toff
2SK3053
2SK3053
2SK3053

2SK3053

TYPICAL CHARACTERISTICS (TA = 25 °C )

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
dT - Percentage of Rated Power - %

Tch - Channel Temperature - ˚C

! FORWARD BIAS SAFE OPERATING AREA

PW = 10 µs 100 µs 1000 1 ms 100 ms 10 ms 100 ID(pulse)
PW = 10 µs
100 µs
1000
1 ms
100 ms
10 ms
100
ID(pulse)
Power Dissipation Limited
ID(DC)
10
1
TC = 25˚C
Single Pulse
0.1
0.1 1
10
100
VGS Limited
RDS(on)
= 10 V)
(at
ID - Drain Current - A
ID - Drain Current - A

VDS - Drain to Source Voltage - V

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

35 30 25 20 15 10 5 0 0 20 40 60 80 100 120
35
30
25
20
15
10
5
0 0
20
40
60
80
100
120
140
160
PT - Total Power Dissipation - W

TC - Case Temperature - ˚C

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000 100 Rth(ch-A) = 62.5 ˚C/W 10 Rth(ch-C) = 4.17 ˚C/W 1 0.1 Single Pulse
1000
100
Rth(ch-A) = 62.5 ˚C/W
10
Rth(ch-C) = 4.17 ˚C/W
1
0.1
Single Pulse
0.01
10 µ
100 µ 1 m
10 m
100 m
1
10
100
1000
rth(t) - Transient Thermal Resistance - ˚C/W

PW - Pulse Width - s

Data Sheet D12912EJ3V0DS

3

2SK3053
2SK3053
2SK3053

2SK3053

4

FORWARD TRANSFER CHARACTERISTICS

1000 Pulsed 100 10 TA = −50˚C 25˚C 1 75˚C 150˚C VDS = 10 V
1000
Pulsed
100
10
TA = −50˚C
25˚C
1
75˚C
150˚C
VDS = 10 V
0.1
0123
4
5
ID - Drain Current - A

VGS - Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

100 VDS = 10 V Pulsed 10 TA = 150 ˚C 75˚C 25˚C −50˚C 1
100
VDS = 10 V
Pulsed
10
TA = 150
˚C
75˚C
25˚C
−50˚C
1
0.1
| yfs | - Forward Transfer Admittance - S
0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE
0.1
1
10
100
ID -
Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
75
50
V
GS = 4.0 V
10 V
25
0
0.1
1
10
100
ID - Drain Current
-
A
RDS(on) - Drain to Source On-state Resistance - mΩ

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

100 80 VGS =10 V 60 40 4.0 V 20 Pulsed 0 0 1.0 2.0
100
80
VGS =10 V
60
40
4.0 V
20
Pulsed
0
0
1.0
2.0
3.0
4.0
ID - Drain Current - A

VDS - Drain to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 75 Pulsed 50 ID =
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
75
Pulsed
50
ID = 13 A
25
0
0
10
20
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
ID = 1 mA
2.0
1.5
1.0
0.5
0
−50
0
50
100
150
VGS(th) - Gate to Source Threshold Voltage - V

Tch - Channel Temperature - ˚C

Data Sheet D12912EJ3V0DS

2SK3053
2SK3053
2SK3053

2SK3053

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 VGS = 4.0 V 60 10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
VGS = 4.0
V
60
10
V
40
20
ID = 13 A
Pulsed
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-state Resistance - mΩ

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000 VGS = 0 V f = 1 MHz 1000 Ciss Coss 100 Crss 10
10000
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
100
Crss
10
0.1 1
10
100
Ciss, Coss, Crss - Capacitance - pF

VDS - Drain to Source Voltage - V

REVERSE RECOVERY TIME vs. DRAIN CURRENT

1000 di/dt = 100 A/ s µ VGS = 0 V 100 10 1 0.1
1000
di/dt = 100 A/ s
µ
VGS = 0 V
100
10
1
0.1 1.0
10
100
IF - Drain Current
- A
trr - Reverse Recovery Time - ns

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

1000 Pulsed 100 VGS = 10 V 10 VGS = 0 V 1 0.1 0
1000
Pulsed
100
VGS = 10 V
10
VGS =
0 V
1
0.1
0
0.5
1.0
1.5
ISD - Diode Forward Current - A

VSD -

Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

1000 t r 100 td(off) tf td(on) 10 1 0.1 1 10 100 td(on), tr,
1000
t
r
100
td(off)
tf
td(on)
10
1
0.1
1
10
100
td(on), tr, td(off), tf - Switching Time - ns

ID - Drain Current - A

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

80 16 60 12 = 48 V VDD 30 V 12 V VGS 40 8
80
16
60
12
= 48 V
VDD
30
V
12
V
VGS
40
8
20
4
VDS
ID = 25 A
0 0
4
8
12
16
20
24
28
32
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V

QG - Gate Charge - nC

Data Sheet D12912EJ3V0DS

5

2SK3053
2SK3053
2SK3053

2SK3053

!

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD

100 EAS = 15.6 mJ IAS = 12.5 A 10 1 VDD = 30 V
100
EAS = 15.6 mJ
IAS = 12.5 A
10
1
VDD = 30 V
VGS = 20 V → 0 V
RG = 25 Ω
Starting Tch = 25˚C
0.1
10 µ
100 µ
1 m
10 m
IAS - Single Avalanche Current - A

L - Inductive Load - H

SINGLE AVALANCHE ENERGY DERATING FACTOR

160 140 VDD = 30 V RG = 25 Ω VGS = 20 V →
160
140
VDD = 30 V
RG = 25 Ω
VGS = 20 V → 0 V
IAS ≤ 12.5 A
120
100
80
60
40
20
0
25
50
75
100
125
150
Energy Derating Factor - %

Starting Tch - Starting Channel Temperature - ˚C

6

Data Sheet D12912EJ3V0DS

2SK3053
2SK3053
2SK3053

2SK3053

PACKAGE DRAWING

Isolated TO-220 (MP-45F)

10.0 ± 0.3 4.5 ± 0.2 φ 3.2 ± 0.2 2.7 0.7 ± 0.1 1.3
10.0 ± 0.3
4.5 ± 0.2
φ 3.2 ± 0.2
2.7
0.7 ± 0.1
1.3 ± 0.2
2.5
1.5 ± 0.2
0.65 ± 0.1
2.54
2.54
1.Gate
2.Drain
3.Source
15.0 ± 0.3
4 ± 0.2
± 0.13
13.5MIN.
± 0.212.0

123

± 0.2

± 0.1

EQUIVALENT CIRCUIT Drain (D) Body Gate (G) Diode Gate Protection Diode Source (S)
EQUIVALENT CIRCUIT
Drain (D)
Body
Gate (G)
Diode
Gate
Protection
Diode
Source (S)

Remark 1. This product is designed for consumer application and isn’t suitable for automotive application. 2. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

Data Sheet D12912EJ3V0DS

7

2SK3053
2SK3053
2SK3053

2SK3053

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.

Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.

NEC semiconductor products are classified into the following three quality grades:

"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).

M8E 00. 4

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