Solid State Devices

13February 2004

Solid State Devices

Objectives
Understand the basic structure of semiconductors and how they conduct current Describe the characteristics and biasing of a pn junction diode Describe the basic diode characteristics Analyze the operation of a half-wave rectifier and a full-wave rectifier Describe the basic structure and operation of bipolar junction transistors Describe the basic structure and operation of JFETs and MOSFETs Discuss the basic op-amp Explain the basic operation of a differential amplifier
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Professor Andrew H. Andersen

Solid State Devices

13February 2004

Diodes

Introduction to Semiconductors
Two types of semiconductor materials are silicon and germainium both have four valance electrons When silicon and germanium atoms combine into molecules to form a solid material, they arrange themselves in a fixed pattern called a crystal atoms within the crystal structure are held together by covalent bonds (atoms share valence electrons) An intrinsic crystal is one that has no impurities In an intrinsic semiconductor, there are relatively few free electrons pure semiconductor materials are neither good conductors nor good insulators
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Professor Andrew H. Andersen

Solid State Devices

13February 2004

Introduction to Semiconductors
Intrinsic semiconductor materials must be modified by increasing the free electrons and holes to increase its conductivity and make it useful for electronic devices
by adding impurities, n-type and p-type extrinsic semiconductor material can be produced

Doping is the process of adding impurities to intrinsic semiconductor materials to increase and control conductivity within the material
n-type material is formed by adding pentavalent (5 valence electrons) impurity atoms electrons are called majority carriers in n-type material holes are called minority carriers in n-type material

p-type material is formed by adding trivalent (3 valence electrons) impurity atoms

holes are called majority carriers in p-type material electrons are called minority carriers in p-type material
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The PN Junction Diode

A diode consists of an n region and a p region separated by a pn junction the n region has many conduction electrons the p region has many holes As a result of recombination, a large number of positive (in the n region) and negative (in the p region) ions builds up near the pn junction, essentially depleting the region of any conduction electrons or holes - termed the depletion region

13 February 2004

Solid State Devices

Professor Andrew H. Andersen

Solid State Devices

13February 2004

The PN Junction Diode

The barrier potential, VB, is the amount of voltage required to move electrons through the electric field At 25C, it is approximately 0.7 V for silicon and 0.3 V for germanium As the junction temperature increases, the barrier potential decreases, and vice versa

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Solid State Devices

The PN Junction Diode

Forward bias is the condition that permits current through a diode the negative terminal of the VBIAS source is connected to the n region, and the positive terminal is connected to the p region

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Solid State Devices

Professor Andrew H. Andersen

Solid State Devices

13February 2004

The PN Junction Diode

The negative terminal of the bias-voltage source pushes the conduction-band electrons in the n region toward the pn junction, while the positive terminal pushes the holes in the p region toward the pn junction When it overcomes the barrier potential (VB), the external voltage source provides the n region electrons with enough energy to penetrate the depletion region and move through the junction

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Solid State Devices

The PN Junction Diode

Reverse bias is the condition that prevent current through the diode the negative terminal of the source voltage is connected to the p region, and the positive terminal is connected to the n region If the external reverse-bias voltage (VZ) is increased to a large enough value, reverse breakdown occurs minority conduction-band electrons acquire enough energy from the external source to accelerate toward the positive end of the diode, colliding with atoms and knocking valence electrons into the conduction band

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Professor Andrew H. Andersen

Solid State Devices

13February 2004

Diode Packages

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PN Junction Diode Transfer Characteristics

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Professor Andrew H. Andersen

Solid State Devices

13February 2004

Diode Characteristics
The arrowhead in the diode symbol points in the direction opposite the electron flow The anode (A) is the p region The cathode (K) is the n region

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Diode Characteristics
The simplest way to visualize diode operation is to think of it as a switch When forward-biased, the diode ideally acts as a closed (on) switch When reverse-biased, it acts as an open (off) switch

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Professor Andrew H. Andersen

Solid State Devices

13February 2004

Half Wave Diode Rectifiers

A diode is connected to an ac source that provides the input voltage, Vin, and to a load resistor, RL, forming a half-wave rectifier on the positive half-cycle the diode is forward biased and current flows VD = .7V V R = ID R VR = VS - VD on the negative half-cycle the diode is revers biased and no current flows VR = 0V VD = VS
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BJT

Professor Andrew H. Andersen

Solid State Devices

13February 2004

DC Operation of Bipolar Junction Transistor

The bipolar junction transistor (BJT) is constructed with three doped semiconductor regions separated by two pn junctions Regions are called emitter, base and collector

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DC Operation of Bipolar Junction Transistors

There are two types of BJTs, the NPN and PNP The two junctions are termed the base-emitter junction and the base-collector junction The term bipolar refers to the use of both holes and electrons as charge carriers in the transistor structure In order for the transistor to operate properly, the two junctions must have the correct dc bias voltages the base-emitter (BE) junction is forward biased the base-collector (BC) junction is reverse biased

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Professor Andrew H. Andersen

Solid State Devices

13February 2004

DC Operation of Bipolar Junction Transistors

Transistor Currents: IE = IC + IB beta (DC) IC = DCIB DC typically has a value between 20 and 300

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Operation of Bipolar Junction Transistors

A common-emitter (CE) amplifier capacitors are used for coupling ac without disturbing dc levels

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Solid State Devices

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FETs

Operation of Field-Effect Transistors

The junction field-effect transistor (JFET) is operated with a reverse biased junction to control current in a channel the device is identified by the material in the channel, either n-channel or p-channel When shown in a drawing, the drain is at the upper end and the source is at the lower end The channel is formed between the gate regions controlling the reverse biasing voltage on the gate-to-source junction controls the channel size and the drain current, ID

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Solid State Devices

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Operation of Field-Effect Transistors

The metal-oxide semiconductor field-effect transistor (MOSFET) differs from the JFET in that it has no pn junction; instead, the gate is insulated from the channel by a silicon dioxide (SiO2) layer MOSFETs may be depletion type (D-MOSFET) or enhancement type (EMOSFET) D-MOSFETs have a physical channel between Drain and Source, with no voltage applied to the Gate E-MOSFETS have no physical Drain-Source channel

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JFET

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Solid State Devices

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JFET Schematic Diagram

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Solid State Devices

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JFET Fixed Bias

RG is used to limit current in case VGG connected with wrong polarity

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DMOSFET

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DMOSFET Schematic Symbols

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EMOSFET

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Solid State Devices

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EMOSFET Schematic Symbol

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Operational Amplifiers

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Solid State Devices

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Introduction to Operational Amplifiers

The standard Operational amplifier has two input terminals, inverting (-) and noninverting (+)

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Introduction to Operational Amplifiers

The ideal op-amp has: infinite voltage gain an infinite input impedance (open) does not load the driving source zero output impedance The practical op-amp has: high voltage gain high input impedance low output impedance

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