Scribd Logo
Загрузить

Добро пожаловать в Scribd!

  • Silicon Properties

    Загружено:

    Luca Crespi
    45 просмотров3 страницы
    Properties of Silicon at 300K Property Atomic weight Atomic density Boiling pointa Breakdown field Bulk modulus Burgers vector Compliance b Covalent radius Critical density Critical pressure Critical temperature Critical volume Crystal plane spacing (100) (110) (111) Crystal structure density density of surface atoms (100) (111) Dielectric constant effective density of states Conduction band Valence band Elastic constantc C11 C12 C14 Electron affinity (111)d Value 28.09 4.995x1014 2,

    Исходное описание:

    Авторское право

    © Attribution Non-Commercial (BY-NC)

    Доступные форматы

    PDF, TXT или читайте онлайн в Scribd

    Этот документ был вам полезен?

    Это неприемлемый материал?

    Пожаловаться на этот документ
    Properties of Silicon at 300K Property Atomic weight Atomic density Boiling pointa Breakdown field Bulk modulus Burgers vector Compliance b Covalent radius Critical density Critical pressure Critical temperature Critical volume Crystal plane spacing (100) (110) (111) Crystal structure density density of surface atoms (100) (111) Dielectric constant effective density of states Conduction band Valence band Elastic constantc C11 C12 C14 Electron affinity (111)d Value 28.09 4.995x1014 2,

    Авторское право:

    Attribution Non-Commercial (BY-NC)
    Скачайте в формате PDF, TXT или читайте онлайн в Scribd
    Отметить как неприемлемый контент
    45 просмотров3 страницы

    Silicon Properties

    Загружено:

    Luca Crespi
    Properties of Silicon at 300K Property Atomic weight Atomic density Boiling pointa Breakdown field Bulk modulus Burgers vector Compliance b Covalent radius Critical density Critical pressure Critical temperature Critical volume Crystal plane spacing (100) (110) (111) Crystal structure density density of surface atoms (100) (111) Dielectric constant effective density of states Conduction band Valence band Elastic constantc C11 C12 C14 Electron affinity (111)d Value 28.09 4.995x1014 2,

    Авторское право:

    Attribution Non-Commercial (BY-NC)
    Скачайте в формате PDF, TXT или читайте онлайн в Scribd
    Отметить как неприемлемый контент
    из 3

    Properties of Silicon at 300K

    Properties of silicon at 300K


    Property Atomic weight Atomic density Boiling pointa Breakdown field Bulk modulus Burgers vector Compliance <111>b Covalent radius Critical density [1] Critical pressure [1] Critical temperature [1] Critical volume [1] Crystal plane spacing (100) (110) (111) Crystal structure Density Density of surface atoms (100) (110) (111) Dielectric constant Effective density of states Conduction band Valence band Elastic constantc C11 C12 C14 Electron affinity (111)d Value 28.09 4.995x1014 2,878 3x105 7.7x1011 0.374 5.32x10-13 0.118 0.1207 530 4,886 232.6 0.543 0.383 0.313 diamond 2.33 6.78x1014 9.59x1014 7.83x1014 11.8 3.22x1019 1.83x1019 1.29x1012 0.483x1012 0.671x1012 4.85 eV n/cm3 n/cm3 g/cm3 atoms/cm2 atoms/cm2 atoms/cm2 cm2/dyne nm g/cm3 atm
    oC

    Units

    atoms/cm2
    oC

    V/cm dynes/cm2

    cm3/gmol nm nm nm

    Copyright 2003 IC Knowledge, all rights reserved.

    Properties of Silicon at 300K

    Property Electron effective mass at 4oKe Longitudinal (ml/m0) Transverse (mt/m0) Density of states (m*/m0) Energy gap (see fig. 1.6) Hardness Heat capacity [1] Heat of fusion @ m.p. [1] Heat of sublimation @ m.p. [1] heat of vaporization @ m.p. [1] Hole effective mass at Heavy (m1/m0) Light (m2/m0) Density of states (m*/m0) Intrinsic carrier concentration (see fig. 1.7) ni ni2 Intrinsic Debye length L Lni Intrinsic resistivity Lattice constant Liquid density @ m.p. [1] Liquid heat capacity @ m.p. [1] Liquid thermal capacity @ m.p. [1] Liquid viscosity @ m.p. [1] Melting point [1] Minority carrier lifetime Nearest neighbor distance Percent expansion on freezing @ m.p. [1] Poissons ratio Refractive index Scattering limited velocity Electron Hole Shear modulus Surface tension @ m.p. [1] Symbol Thermal conductivity [1] Torsion modulus 4oKf

    Value 0.98 0.19 1.08 1.12 7 4.78 264 4,075.0 3,812.0 0.537 0.153 0.591

    Units

    eV Moh cal/gmoloC cal/g cal/g cal/g

    1.38x1010 1.90x1020 28.7 4.0x10-7 2.3x105 0.543 2.533 6.755 1.025x10-3 0.88 1,412 2 2.5x10-3 0.235 10% 0.27 3.4 1.0x107 8.4x106 7.55x1011 736 Si 0.353 3.97x1011

    n/cm3 n/cm3 m n/cm2 cm nm g/cm3 cal/gmoloC cal/seccmoC centipoise


    oC

    s nm

    cm/s cm/s dyne/cm2 dynes/cm cal/seccmoC dyne/cm2

    Copyright 2003 IC Knowledge, all rights reserved.

    Properties of Silicon at 300K

    Property Vapor pressure @ m.p. [1] Youngs modulus (111) direction

    Value 2.8x10-4 1.9x1012

    Units mm Hg dyne/cm2

    a. Carl L. Yaws, Larry L. Dickens, Ralph Lutwak, and George Hsu, Semiconductor Industry Silicon: Physical and Thermodynamic Properties, Solid State Technol., Jan. (1981). b. J.W. Corbett, R.S. McDonald, and G.D. Watkins, The Configuration and Diffusion of Isolated Oxygen in Silicon and Germanium, J. Phys. Chem. Solids, 25, 878 (1964). c. H.J. McSkimin, Measurement of Elastic Constants at Low Temperatures by means of Ultrasonic Waves - Data for Silicon and Germanium Single Crystals, and for Fused Silica, J. Appl. Phys., 24 (8), 988 (1953). d. A. Thanailakis, Contacts Between Simple Metals and Atomically Clean Silicon, J. Phys. C, 8, 655 (1975) e. Semiconductors ed. N.B. Hannay, Reinhold (1959). f. H.D. barber, Effective Mass and Intrinsic Concentration in Silicon, SolidState Electron. 10, 1039 (1967).

    Copyright 2003 IC Knowledge, all rights reserved.

    Вам также может понравиться