Philips Semiconductors

Product Specification

PowerMOS transistor

BUK444-200A/B

GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

QUICK REFERENCE DATA

SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK444 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -200A 200 5.3 25 0.4 MAX. -200B 200 4.7 25 0.5 UNIT V A W

PINNING - SOT186
PIN 1 2 3 gate drain source DESCRIPTION

PIN CONFIGURATION
case

SYMBOL
d

case isolated
1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 k Ths = 25 C Ths = 100 C Ths = 25 C Ths = 25 C MIN. - 55 -200A 5.3 3.3 21 25 150 150 MAX. 200 200 30 -200B 4.7 3.0 19 UNIT V V V A A A W C C

THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 5 UNIT K/W K/W

April 1993

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK444-200A/B

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 200 V; VGS = 0 V; Tj = 25 C VDS = 200 V; VGS = 0 V; Tj =125 C VGS = 30 V; VDS = 0 V VGS = 10 V; BUK444-200A BUK444-200B ID = 3.5 A MIN. 200 2.1 TYP. 3.0 1 0.1 10 0.35 0.4 MAX. 4.0 10 1.0 100 0.4 0.5 UNIT V V A mA nA

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 3.5 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 2.9 A; VGS = 10 V; RGS = 50 ; Rgen = 50 Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 3.5 TYP. 5.0 700 100 50 12 45 80 40 4.5 7.5 MAX. 850 160 80 20 70 120 60 UNIT S pF pF pF ns ns ns ns nH nH

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65% ; clean and dustfree MIN. TYP. MAX. 1500 UNIT V

Cisol

Capacitance from T2 to external f = 1 MHz heatsink

12

pF

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Ths = 25 C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 5.3 A ; VGS = 0 V IF = 5.3 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 30 V MIN. TYP. 1.1 150 0.9 MAX. 5.3 21 1.3 UNIT A A V ns C

April 1993

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK444-200A/B

AVALANCHE LIMITING VALUE

Ths = 25 C unless otherwise specified SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 9 A ; VDD 100 V ; VGS = 10 V ; RGS = 50 MIN. TYP. MAX. 50 UNIT mJ

120 110 100 90 80 70 60 50 40 30 20 10 0

PD%

Normalised Power Derating

with heatsink compound

100

ID / A

BUK444-200A,B

10
R

( DS

)=

VD

S/

ID

A B

tp = 10 us

100 us 1 ms

DC

10 ms 100 ms

20

40

60

80 Ths / C

100

120

140

0.1 1 10 100 VDS / V 1000 10000

Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Ths)

ID% Normalised Current Derating
with heatsink compound

Fig.3. Safe operating area. Ths = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth / (K/W) D= 0.5 1 0.2 0.1 0.05 0.1 0.02 P D tp D= tp T t 1E+01 BUKx44-lv

120 110 100 90 80 70 60 50 40 30 20 10 0

10

20

40

60

80 Ths / C

100

120

140

0.01 1E-07

0 1E-05 1E-03 t/s

T 1E-01

Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Ths); conditions: VGS 10 V

Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T

April 1993

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK444-200A/B

20

ID / A VGS / V = 20 10

BUK444-200A 8

6 5

gfs / S

BUK454-200A

15 7 10 6
2 4 3

5 5 0 4 20
1 0 0 2 4 6 8 10 12 ID / A 14 16 18 20

10 12 VDS / V

14

16

18

Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS

BUK454-200A 6 6.5 7 VGS / V = 7.5 8

Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V

a Normalised RDS(ON) = f(Tj)

1.5

RDS(ON) / Ohm 4.5 5 5.5

1.0

2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0

10 0.5 20

10 12 ID / A

14

16

18

20

-60 -40 -20

20

40 60 Tj / C

80

100 120 140

Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS

ID / A BUK454-200A

Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 3.5 A; VGS = 10 V

VGS(TO) / V 4 max.

20

Tj / C = 15

25

150
3 typ.

10

min. 2

4 VGS / V

10

-60

-40

-20

20

40 60 Tj / C

80

100

120

140

Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

April 1993

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK444-200A/B

1E-01

ID / A

SUB-THRESHOLD CONDUCTION

20

IF / A

BUK454-200A

1E-02

15
1E-03 2% typ 98 %

10
1E-04

Tj / C = 150 5 25

1E-05

1E-06 0 1 2 VGS / V 3 4

0 0 1 VSDS / V 2

Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS

BUK4y4-200

Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

WDSS%

10000

C / pF

120 110 100 90

1000 Ciss

80 70 60 50

100

Coss Crss

40 30 20 10 0

10 0 20 VDS / V 40

20

40

60

80 100 Ths / C

120

140

Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

Fig.15. Normalised avalanche energy rating. WDSS% = f(Ths); conditions: ID = 9 A

12 10 8 6 4 2 0

VGS / V

BUK454-200 VDS / V =40

+
L VDS VGS 0 RGS T.U.T. R 01 shunt

VDD

160

-ID/100

12

16 QG / nC

20

24

28

Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 9 A; parameter VDS

Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS VDD )

April 1993

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK444-200A/B

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g

10.2 max 5.7 max 3.2 3.0

0.9 0.5

4.4 max 2.9 max 4.4 4.0

7.9 7.5 17 max

seating plane

3.5 max not tinned

4.4

13.5 min 1 0.4 M 2 3 0.9 0.7 2.54 5.08 top view 1.3

0.55 max

Fig.17. SOT186; The seating plane is electrically isolated from all terminals.
Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8".

April 1993

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK444-200A/B

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

April 1993

Rev 1.100

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