UNIVERSITY OF CALIFORNIA, DAVIS Department of Chemical Engineering and Materials Science EMS 172: Electronic, Magnetic, and Optical

Properties of Materials Homework 4 Due Date: Tuesday, Oct. 25th, 2011 in class Note: You must show all the steps you used to obtain your answer in order to receive full credit. Remember to include units and labels to your graphs. Hand sketches will not be given full credit. 1. Extrinsic Semiconductors Consider an n-type silicon sample that has been doped with 1x1017 arsenic atoms per cm3. The donor level for As in Si is 0.049 eV below the conduction band energy. (a) Use your Matlab / Mathematica program from HW 3 to create plots of Ne [#/cm3] vs. temperature [K] AND Ne [#/cm3] vs. (1/T) *1000 [K-1] with a logarithmic y-axis for the temperature range from 25 K < T < 900 K. Hand sketches will not be given full credit. Hint for making sure you get the correct magnitude on your plots: if you use ALL SI units for all the constants (Joules, kg, meters, etc), you will get an answer for Ni or Ne with units of [#/m3] and convert to [#/cm3]. An easy number to remember is that for Si, Ni ~ 1010 #/cm3 at 300 K. As discussed in lecture, the full temperature range is broken down into three regimes, intrinsic, extrinsic, and freeze-out, and each of these regimes is described by a separate equation. In the freeze-out regime, the equation is given by:

Ne = N D+

( E ED ) 1 2 = N D N C exp C 2 k BT 2

Label these three regimes in both of your plots. When creating your plots, consider the following questions: (i) What equation governs Ne in the intrinsic regime? (ii) What equation governs Ne in the extrinsic regime? (ii) What equation governs Ne in the freeze-out regime? Hint: Only plot the governing equation in the appropriate temperature regime and not for the entire temperature range. As needed, zoom into the concentration range that highlights the salient points of the plot. (b) Using your plot in (a), estimate the lowest temperature above which all the donors are ionized. (c) Using your plot in (a), estimate the temperature above which the sample behaves as an intrinsic semiconductor. (d) Calculate Nh at 150 K and 290 K. (e) For the three regimes in your plot, sketch a block energy band diagram that clearly indicates how the electrons in the conduction band and holes in the valence band are generated. Include all the appropriate labels. (f) What is the dominant scattering mechanism at low temperatures? (g) What is the dominant scattering mechanism at high temperatures? (h) Sketch log() vs. 1/T *1000 for the full temperature range from 25K < T < 900 K. (i) Consider instead that you dope your silicon with 1x1015 arsenic atoms per cm3. Add the curve for Ne for this sample to your plots in (a). Repeat parts (b) and (c) for this lower doping level. (j) Using the mobility data given as a text file, calculate the conductivity for both As doping levels at 300 K.

EMS 172

Profs. Y. Takamura and A. Moul, 2011

(k) Now consider that you are asked by a circuit engineer to obtain an n-type Si sample with a value of 5 (-cm)-1 for the source/drain regions of a transistor operating at 300 K. What value of doping would you use? Fully explain your answer to receive full credit. 2. Superconductors [15 pts] You are constructing a type of electromagnet called a Helmholz pair (see the image on the right.) The magnetic flux density B at the midpoint between the coils is given by

4 2 nI B= 0 5 R
Where n is the number of coils in each loop, R is the radius in meters and I is the current. The coil has a radius of 11 cm and is wrapped with n=56 loops of 20 Gauge copper wire (Resistance = 30.31 /km, cross sectional area = 0.518 mm^2). a) What voltage must be applied to the Helmholz pair to attain a magnetic field of 0.01 T. b) How much power does this dissipate? Suggest a way to reduce the power dissipation in the copper coils. You realize that the coils are making too much heat. So you decide to switch to identical coils made of superconducting Nb3Sn. The coils are brought to the same current and then the temperature is reduced below Tc. c) How many quanta of magnetic flux pass through an imaginary loop of 0.5 cm dia in the center of the loops? (you may assume that the field is uniform) d) The critical current density of Nb3Sn is 3*109 A/m2. Assume that you can change the diameter of the loops without changing the # of trapped flux quanta. At which radius does the superconductor breakdown? e) How is this field distribution different than in your first coil (more or less homogeneous)?

EMS 172

Profs. Y. Takamura and A. Moul, 2011