H

High Resolution Optical Reflective Sensor Technical Data

HBCS-1100

Features
Focused Emitter and Detector in a Single Package High Resolution0.190 mm Spot Size 700 nm Visible Emitter Lens Filtered to Reject Ambient Light TO-5 Miniature Sealed Package Photodiode and Transistor Output Solid State Reliability

matched I.C. photodetector. A bifurcated aspheric lens is used to image the active areas of the emitter and the detector to a single spot 4.27 mm (0.168 in.) in front of the package. The reflected signal can be sensed directly from the photodiode or through an internal transistor that can be configured as a high gain amplifier.

Applications
Applications include pattern recognition and verification, object sizing, optical limit switching, tachometry, textile thread counting and defect detection, dimensional monitoring, line locating, mark, and bar code scanning, and paper edge detection.

Mechanical Considerations
The HBCS-1100 is packaged in a high profile 8 pin TO-5 metal can with a glass window. The emitter and photodetector chips are mounted on the header at the base of the package. Positioned above these active elements is a bifurcated aspheric acrylic lens that focuses them to the same point.
12.0 (0.473) R.P.

Description
The HBCS-1100 is a fully integrated module designed for optical reflective sensing. The module contains a 0.178 mm (0.007 in.) diameter 700 nm visible LED emitter and a

Package Dimensions
9.40 (0.370) 8.51 (0.335) MAXIMUM SIGNAL POINT 0.86 (0.034) 0.73 (0.029) 8.33 (0.328) 7.79 (0.307) REFERENCE PLANE 4.27 0.25 (0.168 0.010) 4.11 (0.162) 1.14 (0.045) 0.73 (0.029) 15.24 (0.600) 12.70 (0.500) 5.08 (0.200) 11.50 (0.453) 11.22 (0.442) S.P.

C L

5.08 (0.200)

NOTES: 1. ALL DIMENSIONS IN MILLIMETERS AND (INCHES). 2. ALL UNTOLERANCED DIMENSIONS ARE FOR REFERENCE ONLY. 3. THE REFERENCE PLANE IS THE TOP SURFACE OF THE PACKAGE. 4. NICKEL CAN AND GOLD PLATED LEADS. 5. S.P. SEATING PLANE. 6. THE LEAD DIAMETER IS 0.45 mm (0.018 IN.) TYP.

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5965-5944E 4-15

The sensor can be rigidly secured by commercially available two piece TO-5 style heat sinks, such as Thermalloy 2205, or Aavid Engineering 3215. These fixtures provide a stable reference platform and their tapped mounting holes allow for ease of affixing this assembly to the circuit board.

Electrical Operation
The detector section of the sensor can be connected as a single photodiode or as a photodiode transistor amplifier. When photodiode operation is desired, it is recommended that the substrate diodes be defeated by connecting the collector of the

transistor to the positive potential of the power supply and shorting the base-emitter junction of the transistor. Figure 15 shows photocurrent being supplied from the anode of the photodiode to an inverting input of the operational amplifier. The circuit is recommended to improve the reflected photocurrent to stray photocurrent ratio by keeping the substrate diodes from acting as photodiodes. The cathode of the 700 nm emitter is physically and electrically connected to the casesubstrate of the device. Applications that require modulation or

switching of the LED should be designed to have the cathode connected to the electrical ground of the system. This insures minimum capacitive coupling of the switching transients through the substrate diodes to the detector amplifier section. The HBCS-1100 detector also includes an NPN transistor which can be used to increase the output current of the sensor. A current feedback amplifier as shown in Figure 6 provides moderate current gain and bias point stability.

Schematic Diagram
VD REFLECTOR REFERENCE PLANE 3 VC

Connection Diagram

TOP VIEW

ANODE VF 6
6 7 8

DS DS CATHODE 4 SUBSTRATE, CASE DS SUBSTRATE DIODES

PIN 1 2 3 4 5 6 7 8 FUNCTION TRANSISTOR COLLECTOR TRANSISTOR BASE, PHOTODIODE ANODE PHOTODIODE CATHODE LED CATHODE, SUBSTRATE, CASE NC LED ANODE NC TRANSISTOR EMITTER

2 VB

8 VE

CAUTION: The small junction sizes inherent to the design of this bipolar component increase the component's susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be introduced by ESD.

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Absolute Maximum Ratings at TA = 25C

Parameter Storage Temperature Operating Temperature Lead Soldering Temperature 1.6 mm from Seating Plane Average LED Forward Current Peak LED Forward Current Reverse LED Input Voltage Package Power Dissipation Collector Output Current Supply and Output Voltage Transistor Base Current Transistor Emitter Base Voltage Symbol TS TA Min. -40 -20 Max. +75 +70 260 for 10 sec. 50 75 5 120 8 20 5 0.5 Units C C C mA mA V mW mA V mA V Fig. Notes

11 2 1 3 10

IF IFPK VR PP IO VD, VC, VE IB VEB

-0.5

System Electrical/Optical Characteristics at TA = 25C

Parameter Total Photocurrent (IPR + IPS) Reflected Photocurrent (IPR) to Internal Stray Photocurrent (IPS) Transistor DC Static Current Transfer Ratio Slew Rate Symbol IP Min. Typ. Max. Units Conditions 575 nA TA = 20C IF = 35 mA, 150 250 375 TA = 25C VD = VC = 5 V 80 TA = 70C 4 8.5 IF = 35 mA, VC = VD = 5 V 50 100 200 0.08 TA = 20C VCE = 5 V, TA = 25C IC = 10 A RL = 100 K, IPK = 50 mA, RF = 10 M, tON = 100 s, Rate = 1 kHz IF = 35 mA, = 4.27 mm (0.168 in.) Measured from Reference Plane IF = 35 mA, =4.27 mm 50% of IP at = 4.27 mm Fig. Note 2, 3 4 15 3

IPR IPS hFE

4, 5 6

V/s

Image Diameter Maximum Signal Point 50% Modulation Transfer Function Depth of Focus Effective Numerical Aperture Image Location

0.17 4.01 4.27 4.52

mm mm Inpr/mm mm

8, 10 8, 9 9 10, 11 9 5, 7 5

MTF FWHM N.A. D

2.5 1.2 0.3 0.51

mm

Diameter Reference to Centerline = 4.27 mm

Thermal Resistance

JC

85

C/W

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Detector Electrical/Optical Characteristics at TA = 25C

Parameter Dark Current Capacitance Flux Responsivity Detector Area Symbol IPD CD R AD Min. Typ. 5 45 0.22 0.160 Max. 200 10 Units pA nA pF A/W mm2 Conditions Fig. Note TA = 25C IF = 0, VD = 5 V; Reflection = 0% TA = 70C VD = 0 V, IP = 0, f = 1 MHz = 700 nm, VD = 5 V Square, with Length = 0.4 mm/Side 12

Emitter Electrical/Optical Characteristics at TA = 25C

Parameter Forward Voltage Reverse Breakdown Voltage Radiant Flux Peak Wavelength Thermal Resistance Temperature Coefficient of VF Symbol VF BVR E p JC VF /T Min. 5 5 680 Typ. 1.6 9.0 700 150 -1.2 720 Max. 1.8 Units V V W nm C/W mV/C Conditions IF = 35 mA IR = 100 A IF = 35 mA, = 700 nm IF = 35 mA IF = 35 mA Fig. Note 13 14 14

Transistor Electrical Characteristics at TA = 25C

Parameter Symbol Min. Typ. Max. Units Collector-Emitter Leakage ICEO 1 nA Base-Emitter Voltage VBE 0.6 V Collector-Emitter Saturation VCE(SAT) 0.4 V Voltage Collector-Base Capacitance CCB 0.3 pF Base-Emitter Capacitance CBE 0.4 pF Thermal Resistance JC 200 C/W Conditions VCE = 5 V IC = 10 A, IB = 70 nA IB = 1 A, IE = 10 A f = 1 MHz, VCB = 5 V f = 1 MHz, VBE = 0 V Fig. Note

Notes: 1. 300 s pulse width, 1 kHz pulse rate. 2. Derate Maximum Average Current linearly from 65C by 6 mA/C. 3. Without heat sinking from TA = 65C, derate Maximum Average Power linearly by 12 mW/C. 4. Measured from a reflector coated with a 99% reflective white paint (Kodak 6080) positioned 4.27 mm (0.168 in.) from the reference plane. 5. Peak-to-Peak response to black and white bar patterns. 6. Center of maximum signal point image lies within a circle of diameter D relative to the center line of the package. A second emitter image (through the detector lens) is also visible. This image does not affect normal operation. 7. This measurement is made with the lens cusp parallel to the black-white transition. 8. Image size is defined as the distance for the 10%-90% response as the sensor moves over an abrupt black-white edge. 9. (+) indicates an increase in the distance from the reflector to the reference plane. 10. All voltages referenced to Pin 4. 11. CAUTION: The thermal constraints of the acrylic lens will not permit the use of conventional wave soldering procedures. The typical preheat and post cleaning temperatures and dwell times can subject the lens to thermal stresses beyond the absolute maximum ratings and can cause it to defocus.

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IFPK (MAX.) RATIO OF MAXIMUM OPERATING PEAK IF (MAX.) CURRENT TO TEMPERATURE DERATED MAXIMUM DC CURRENT

PHOTOCURRENT, IPR OR IPS (NORMALIZED AT IF = 35 mA, TA = 25 C)

1.6 -20 C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 80 0 C 25 C 50 C 70 C

2.0 1.8 1.6 1.4

H 100
300

Hz 1K

Hz 3K

H 30 K

H 10 K

Hz

1.2

1.0

10

100 tP PULSE DURATION (s)

1000

10,000

IF DC FORWARD CURRENT (mA)

Figure 1. Maximum Tolerable Peak Current vs. Pulse Duration.

Figure 2. Relative Total Photocurrent vs. LED DC Forward Current.

+5 V

REFLECTOR REFERENCE PLANE ANODE VF + HP 6177 6

IF = 35 mA

DS CATHODE 4 SUBSTRATE, CASE IP = IPR + IPS DS 2 IP + NANOAMPERE METER (KEITHLEY MODEL 480) NOTES: 1. IP MEASUREMENT CONDITIONS ARE: = 4.34 mm, KODAK 6080 PAINT REFLECTOR. 2. IPS MEASUREMENT CONDITIONS ARE: = A CAVITY WHOSE DEPTH IS MUCH GREATER THAN THE HBCS-1100 DEPTH OF FIELD. 8

Figure 3. IP Test Circuit.

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hFE DC FORWARD CURRENT GAIN (NORMALIZED AT IB = 100 nA, TA = 25 C)

3.0
IC COLLECTOR CURRENT (A)

50 IB BASE CURRENT (nA) nA TEMP = 25 C 160 nA 140 nA 120 nA 100 80 nA

60 nA

40

2.0

VCE = 5 V 70 C 25 C

30

20

1.0

-20 C

10

40 nA
20 nA

0 10

100

1000

10,000

8 10 12 14 16 18 20

IB BASE CURRENT (nA)

VCE COLLECTOR-TO-EMITTER VOLTAGE (V)

Figure 4. Normalized Transistor DC Forward Current Gain vs. Base Current at Temperature.

Figure 5. Common Emitter Collector Characteristics.

VCC = 5 V RL 100 K VO REFLECTOR REFERENCE PLANE IFPK = 50 mA tP = 100 s, RATE = 1 KHz ANODE VF 47 HP 8007 DS CATHODE 4 SUBSTRATE, CASE DS 2 8 6 3 1 RF 10 M

Figure 6. Slew Rate Measurement Circuit.

EMITTER

DETECTOR IMAGE THROUGH EMITTER LENS

MAXIMUM SIGNAL POINT

DETECTOR

EMITTER IMAGE THROUGH DETECTOR LENS

Figure 7. Image Location.

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0.4
% REFLECTED PHOTOCURRENT

110 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6
% REFLECTED PHOTOCURRENT

110 100 90 80 70 60 50 40 30 20 10 0 -0.3 -0.2 -0.1 d 0 10 % 0.1 0.2 0.3 90 %

SEE NOTES 7, 8, 9
d IMAGE SIZE (mm)

0.3

0.2

0.1

0 -0.4

-0.2

0.2

0.4

0.6

0.8

DISTANCE FROM MAXIMUM SIGNAL (mm)

REFLECTOR DISTANCE (mm)

d EDGE DISTANCE (mm)

Figure 8. Image Size vs. Maximum Signal Point.

Figure 9. Reflector Distance vs. Percent Reflected Photocurrent.

Figure 10. Step Edge Response.

110
% AMPLITUDE MODULATION (P-P)

110 100 90 80
% RESPONSE
IF INPUT CURRENT (mA)

100

100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6

10

70 60 50 40 30 20 10 0 600 700 800 900 1000 25 C 70 C

1 + 0.1 VF 1.4 1.5 1.6 1.7 IF

0.01 1.3

SPATIAL FREQUENCY (LINE PAIR/mm)

WAVELENGTH (nm)

VF FORWARD VOLTAGE (V)

Figure 11. Modulation Transfer Function.

Figure 12. Detector Spectral Response.

Figure 13. LED Forward Current vs. Forward Voltage Characteristics.

VCC

1.2
RELATIVE RADIANT FLUX

0 C 25 C

REFLECTOR REFERENCE PLANE ANODE

70 C

1 R2

1.0 0.8 0.6 0.4 0.2 0 640

R1

VF

6 IP DS

CATHODE 4 SUBSTRATE, CASE

660 680 700 720 740 760

DS 2 8

+ VOUT

WAVELENGTH (nm)

VOUT =

VCC IPRF 1 + R2/R1

RF

Figure 14. Relative Radiant Flux vs. Wavelength.

Figure 15. Photodiode Interconnection.

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