Bulletin I2401 rev.

A 07/00

50RIA SERIES
MEDIUM POWER THYRISTORS Features
High current rating Excellent dynamic characteristics dv/dt = 1000V/s option Superior surge capabilities Standard package Metric threads version available Types up to 1600V V DRM / V RRM

Stud Version

50 A

Typical Applications
Phase control applications in converters Lighting circuits Battery charges Regulated power supplies and temperature and speed control circuit Can be supplied to meet stringent military, aerospace and other high-reliability requirements

Major Ratings and Characteristics

Parameters
IT(AV) @ TC IT(RMS) ITSM
2

10 to 120
50 94 80

50RIA 140 to 160

50 90 80 1200 1257 7.21 6.58 1400 to 1600 110

Units
A C A A A KA2s KA2s V s C

@ 50Hz @ 60Hz

1430 1490 10.18 9.30 100 to 1200

I t

@ 50Hz @ 60Hz

V DRM/V RRM tq TJ typical

- 40 to 125

Case Style TO-208AC (TO-65)

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50RIA Series
Bulletin I2401 rev. A 07/00

ELECTRICAL SPECIFICATIONS Voltage Ratings

Voltage Type number Code
10 20 40 60 50RIA 80 100 120 140 160

V DRM /V RRM , max. repetitive peak and off-state voltage (1) V

100 200 400 600 800 1000 1200 1400 1600

VRSM , maximum nonrepetitive peak voltage (2) V

150 300 500 700 900 1100 1300 1500 1700

I DRM /I RRM max.

@ TJ = TJ max.

mA

15

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s (2) For voltage pulses with tp 5ms

On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Max. average on-state current @ Case temperature Max. RMS on-state current Max. peak, one-cycle non-repetitive surge current

50RIA 10 to 120
50 94 80 1430 1490 1200 1255

140 to 160
50 90 80 1200 1257 1010 1057 7.21 6.58 5.10 4.65 72.1 1.02 1.17 4.78 3.97 1.78

Units
A C A A

Conditions
180 sinusoidal conduction

t = 10ms t = 8.3ms t = 10ms t = 8.3ms

No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.

I2t

Maximum I2t for fusing

10.18 9.30 7.20 6.56

KA2 s

t = 10ms t = 8.3ms t = 10ms t = 8.3ms

I2t VT(TO)1

Maximum I2t for fusing Low level value of threshold voltage

101.8 0.94 1.08 4.08 3.34 1.60 200 400

KA2s V

t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. ( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.

VT(TO)2 High level value of threshold voltage rt1 rt2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Latching current

(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. ( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.

V mA

Ipk= 157 A, TJ = 25C TJ = 25C. Anode supply 22V, resistive load, Initial IT = 2A Anode supply 6V, resistive load

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50RIA Series
Bulletin I2401 rev. A 07/00

Switching
Parameter
di/dt Max. rate of rise of turned-on current VDRM 600V VDRM 1600V td tq Typical delay time 200 100 0.9 s Typical turn-off time 110 A/s

50RIA

Units

Conditions
TC = 125C, VDM = rated VDRM Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max. ITM = (2x rated di/dt) A TC = 25C VDM = rated VDRM ITM = 10A dc resistive circuit Gate pulse = 10V, 15 source, tp = 20s TC = 125C, ITM = 50A, reapplied dv/dt = 20V/s dir/dt = -10A/s, VR=50V

Blocking
Parameter
dv/dt Max. critical rate of rise of off-state voltage

50RIA
200 500 (*)

Units Conditions
V/s TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM

(*) Available with dv/dt = 1000V/s, to complete code add S90 i.e. 50RIA160S90.

Triggering
Parameter
PGM IGM +VGM -VGM IGT Maximum peak gate power PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage DC gate current required to trigger 10 250 100 50 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 3.5 2.5 5.0 0.2 V mA V mA TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C Max. gate current/ voltage not to TJ = TJ max VDRM = rated voltage trigger is the max. value which will not trigger any unit with rated TJ = TJ max VDRM anode-to-cathode applied 20 V

50RIA
10 2.5 2.5

Units Conditions
W A TJ = TJ max, t p 5ms

Max. required gate trigger current/voltage are the lowest value which will trigger all units 6V anode-to-cathode applied

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50RIA Series
Bulletin I2401 rev. A 07/00

Thermal and Mechanical Specification

Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range

50RIA
- 40 to 125 - 40 to 125 0.35

Units Conditions
C C K/W DC operation

RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque Min. Max. wt Approximate weight Case style

0.25

K/W

Mounting surface, smooth, flat and greased

2.8 (25) 3.4 (30) 28 (1.0)

Nm (lbf-in) g (oz)

Non-lubricated threads

TO-208AC (TO-65)

See Outline Table

RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)

Conduction angle
180 120 90 60 30

Sinusoidal conduction Rectangular conduction Units

0.078 0.094 0.120 0.176 0.294 0.057 0.098 0.130 0.183 0.296 K/W

Conditions
TJ = TJ max.

Ordering Information Table

Device Code

50
1

RIA 160 S90

2 3 4

M
5

1 2 3 4

Current code Essential part number Voltage code: Code x 10 = VRRM (See Voltage Rating Table) Critical dv/dt: None = 500V/s (Standard value) S90 = 1000V/s (Special selection)

None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A M = Stud base TO-208AC (TO-65) M6 X 1

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50RIA Series
Bulletin I2401 rev. A 07/00

Outline Table

Case Style TO-208AC (TO-65)

All dimensions in millimeters (inches)

Maximum Allowable Case Temperature (C)

50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W

Maximum Allowable Case Temperature (C)

130

130

50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W

120
Conduction Angle

120

110

Conduction Period

110 30 100 60

100

90 120 180

90 30 80 0 10 20 60

90 120 40

180 60

DC 70 80

90

10

20

30

40

50

60

30

50

Average On-state Current (A)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristic

Fig. 2 - Current Ratings Characteristic

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50RIA Series
Bulletin
Maximum Average On-state Power Loss (W) 80 70 60 50 40 30
Conduction Angle

I2401 rev. A 07/00

180 120 90 60 30 RMS Limit Maximum Average On-state Power Loss (W) 100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 DC 180 120 90 60 30

RMS Limit
Conduction Period

20 10 0 0 10 20

50RIA Series (100V to 1200V) T = 125C J 30 40 50

50RIA Series (100V to 1200V) T = 125C J 50 60 70 80

Average On-state Current (A)

Average On-state Current (A)

Fig. 3 - On-state Power Loss Characteristics

1300 Peak Half Sine Wave On-state Current (A) 1200 1100 1000 900 800 700 600 50RIA Series (100V to 1200V) 1 10 100

Fig. 4 - On-state Power Loss Characteristics

1500 Peak Half Sine Wave On-state Current (A) 1400 1300 1200 1100 1000 900 800 700 600 500 0.01 50RIA Series (100V to 1200V) 0.1 Pulse Train Duration (s) 1

At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated V RRM Reapplied

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

130

Fig. 6 - Maximum Non-Repetitive Surge Current

130

50RIA Series (1400V to 1600V) RthJC (DC) = 0.35 K/W

Maximum Allowable Case Temperature (C)

Maximum Allowable Case Temperature (C)

50RIA Series (1400V to 1600V) RthJC (DC) = 0.35 K/W

120

120

110 30

Conduction Angle

110

Conduction Period

100

60

90

120

100

180

90

90 30 80 0

90 60 120 180

DC

80

5 10 15 20 25 30 35 40 45 50 55 Average On-state Current (A)

10 20 30 40 50 60 70 80 90 Average On-state Current (A)

Fig. 7 - Current Ratings Characteristics

Fig. 8 - Current Ratings Characteristics

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50RIA Series
Bulletin I2401 rev. A 07/00
Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 90 80 70 60 50 40 30 20 10 0 0 5
Conduction Angle

120 110 100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 DC 180 120 90 60 30 RMS Limit

Conduction Period

180 120 90 60 30 RMS Limit

50RIA Series (1400V to 1600V) T = 125C J 10 15 20 25 30 35 40 45 50 Average On-state Current (A)

50RIA Series (1400V to 1600V) T = 125C J 50 60 70 80

Average On-state Current (A)

Fig. 9 - On-state Power Loss Characteristics

1100 Peak Half Sine Wave On-state Current (A) 1000 900 800 700 600 500

Fig. 10 - On-state Power Loss Characteristics

1200 Peak Half Sine Wave On-state Current (A) 1100 1000 900 800 700 600 500 50RIA Series (1400V to 1600V) 0.1 Pulse Train Duration (s) 1

At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial T = 125C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125C J No Voltage Reapplied Rated V RRMReapplied

50RIA Series (1400V to 1600V) 1 10 100

400 0.01

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 11 - Maximum Non-Repetitive Surge Current

1000 Instantaneous On-state Current (A) Instantaneous On-state Current (A)

Fig. 12 - Maximum Non-Repetitive Surge Current

1000

100

100

T = 25C J 10 T = 125C J

T = 25C J 10 T = 125C J

50RIA Series (100V to 1200V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5

50RIA Series (1400V to 1600V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Instantaneous On-state Voltage (V)

Instantaneous On-state Voltage (V)

Fig. 13 - Forward Voltage Drop Characteristics

Fig. 14 - Forward Voltage Drop Characteristics

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50RIA Series
Bulletin I2401 rev. A 07/00
Transient Thermal Impedance ZthJ-hs (K/W) 1 Steady State Value RthJ-hs = 0.35 K/W

0.1

50RIA Series

0.01 0.001

0.01

0.1 Square Wave Pulse Duration (s)

10

Fig. 15 - Thermal Impedance ZthJC Characteristics

100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30 ohms; tr<=0.5 s b) Recommended load line for <=30% rated di/dt : 20V, 65 ohms tr<=1 s 10 (b) (a)
Tj=-40 C Tj=25 C

(1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2.5ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500s

Tj=125 C

(1) (2)

(3) (4)

VGD IGD 0.1 0.001 0.01

50RIA Series 0.1 1

Frequency Limited by PG(AV) 10 100 1000

Instantaneous Gate Current (A)

Fig. 16 - Gate Characteristics

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This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.