Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA

SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 8.0 0.2 MAX. 1500 800 12 30 45 5.0 0.35 UNIT V V A A W V A s

Ths 25 C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A; IB(end) = 1.1 A

PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION

PIN CONFIGURATION
case

SYMBOL

c b
1 2 3

case isolated

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 45 150 150 UNIT V V A A A A mA A W C C

average over any 20 ms period Ths 25 C

THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W

1 Turn-off current.

September 1997

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V

Cisol

Capacitance from T2 to external f = 1 MHz heatsink

22

pF

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2

CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 8.0 A; IB = 1.6 A IC = 8.0 A; IB = 1.6 A IC = 100 mA; VCE = 5 V IC = 8 A; VCE = 5 V

MIN. 7.5 800 5

TYP. 13.5 13 7

MAX. 1.0 2.0 1.0 5.0 1.1 9.5

UNIT mA mA mA V V V V

Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (32 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 8.0 A; LC = 260 H; Cfb = 13 nF; IB(end) = 1.1 A; LB = 2.5 H; -VBB = 4 V; (-dIB/dt = 1.6 A/s) TYP. 145 MAX. UNIT pF

3.0 0.2

4.0 0.35

s s

2 Measured with half sine-wave voltage (curve tracer).

September 1997

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

ICsat

+ 50v 100-200R
IC

90 %

Horizontal
tf

10 %

Oscilloscope
IB

ts IBend

Vertical 100R 6V 30-60 Hz 1R

- IBM

Fig.1. Test circuit for VCEOsust.

Fig.4. Switching times definitions.

IC / mA

+ 150 v nominal adjust for ICsat

Lc
250 200

100

IBend

LB

T.U.T. Cfb

0 VCE / V

min VCEOsust

-VBB

Fig.2. Oscilloscope display for VCEOsust.

Fig.5. Switching times test circuit.

TRANSISTOR IC DIODE

ICsat

100

hFE

BU2525AF
Tj = 25 C

5V

Tj = 125 C

IB

IBend t 10us 13us 32us

10 1V

VCE

1
t

0.1

1 IC / A

10

100

Fig.3. Switching times waveforms.

Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE

September 1997

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

1.2 1.1 1 0.9

VBESAT / V
Tj = 25 C Tj = 125 C

BU2525AF

10

VCESAT / V

BU2525AF
Tj = 25 C Tj = 125 C

8A

0.8 0.7 0.6 0.5 0.4 0.1 1 IC / A 10 IC/IB= 3 4 5

1
6A

5A

IC = 4 A 0.1 0.1 1 IB / A 10

Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB

Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC

1 0.9 0.8 0.7 0.6 0.5

VCESAT / V IC/IB = 5 4 3

BU2525AF

1000

Eoff / uJ IC = 8 A

BU2525AF

7A 100

Tj = 25 C

0.4 0.3 0.2 0.1 0 0.1

Tj = 125 C

1 IC / A

10

100

10 0.1 1 IB / A 10

Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB

Fig.11. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC; f = 32 kHz

1.2 1.1 1 0.9

VBESAT / V
Tj = 25 C Tj = 125 C

BU2525AF

IC= 0.8 0.7 0.6 0 1 2 IB / A 3 8A 6A 5A 4A 4

12 11 10 9 8 7 6 5 4 3 2 1 0

ts, tf / us 32 kHz

BU2525AF

ts

IC = 8A 7A 0.1 1 IB / A tf 10

Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC

Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 32 kHz

September 1997

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

120 110 100 90 80 70 60 50 40 30 20 10 0

PD%

Normalised Power Derating

with heatsink compound

IC / A 100

BU2525AF tp =

ICM

= 0.01

40 us ICDC 10 100 us
0 20 40 60 80 Ths / C 100 120 140

Fig.13. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths)

Ptot 1

1 ms
10 Zth / (K/W) BU2525AF

0.5 0.2 0.1 0.05 0.02

0.1 10 ms DC
P D tp D= tp T

0.1

0.01 D=0 0.001 1E-06 1E-04 1E-02 t/s

0.01
T t

10

100

1000 VCE / V

1E+00

Fig.14. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T

Fig.15. Forward bias safe operating area. Ths = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound.

September 1997

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

MECHANICAL DATA
Dimensions in mm Net Mass: 5.5 g

15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2

5.2 max

o 45

seating plane

3.5

3.5 max not tinned

15.7 min 1 2.1 max 2 3 1.2 1.0

5.45

0.7 max 0.4 M 2.0

5.45

Fig.16. SOT199; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

September 1997

Rev 1.400