Resistor Fabrication

ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING

Resistors
Dr. Robert Pearson

9-19-05 Resistor fabrication.ppt

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Resistor Fabrication

OUTLINE Definitions Resistor I-V Characteristics The Semiconductor Resistor Resistivity Carrier Mobility The Diffused Semiconductor Resistor Resistor Design and Cross-Sections Resistor Fabrication Sequence (micrographs) Resistor Networks, Terminations

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Resistor Fabrication

DEFINITIONS Voltage - The force applied between two points causing charged particles (and hence current) to flow. Units - Volts, and the symbol used is V. Sometimes called the potential Current - A measure of the number of charged particles passing a given point per unit time. Units - Amperes or Coulombs per second. The symbol I is usually used to denote a current. Resistance - A measure of the ability of a sample of a material to allow a current to pass through it when an external force or potential is applied. The units are Ohms and the symbol R is used for a resistance. Ohms Law V = I (R) or R=V/I or I=V/R

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MEASURING RESISTOR I-V CHARACTERISTIC

variable Voltage Supply
5 0 10

Ammeter (measures current)

5 0 10

control knob

+ -

(Volts) V

(Amperes) I
Data Table Resistance (V/I) in Ohms 1000 1000 1000 1000 1000 ? 1000

resistor

Volts V -5 -4 -3 -2 -1 0 1

Amperes I -0.005 -0.004 -0.003 -0.002 -0.001 0 0.001

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PLOT OF I-V RESISTOR CHARACTERISTIC I R = V/I = 1/slope V Resistor a two terminal device that exhibits a linear I-V characteristic that goes through the origin. The inverse slope is the value of the resistance.

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THE SEMICONDUCTOR RESISTOR

Resistance = R = L/Area = s L/w Resistivity = = 1/( qnn + qpp) ohms ohm-cm

Sheet Resistance = s = 1/ ( q (N) N(x) dx) ~ 1/( q Dose) ohms/square s = / t

L

integral Area

w t

Note: sheet resistance is convenient to use when the resistors are made of thin sheet of material, like in integrated circuits.

R
q = 1.6E-19 coulombs
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Resistor Fabrication

RESISTIVITY OF SILICON
1021

Impurity Concentration, N, cm-3

1020 1019 1018

= 1/(qN)
Because the carrier mobility, is a function of N and N is the doping, the relationship between resistivity and N is given in the figure shown to the left, or calculated from equations for as a function of N (see next page)
104

Boron doped silicon

1017 1016 1015 1014 1013 10-4

Phosphorous Doped silicon

10-3

10-2

10-1 100

101

102

103

Resistivity, ohm-cm
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Resistor Fabrication

ELECTRON AND HOLE MOBILITY

Electron and hole mobilities in silicon at 300 K as functions of the total dopant concentration (N). The values plotted on the next page are the results of the curve fitting measurements from several sources. The mobility curves can be generated using the equation below with the following parameter values:

(N) = min + {1 + (N/Nref)}

Parameter min max Nref Arsenic 52.2 1417 9.68X10^16 0.680 Phosphorous 68.5 1414 9.20X10^16 0.711 Boron 44.9 470.5 2.23X10^17 0.719

(max-min)

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ELECTRON AND HOLE MOBILITY

Carrier Mobilities versus Doping Concentration 1.60E+03 1.40E+03 Carrier Mobility (cm2/V-sec) 1.20E+03 1.00E+03 8.00E+02 6.00E+02 4.00E+02 2.00E+02 0.00E+00 1.00E+14 1.00E+15 1.00E+16 1.00E+17 1.00E+18 1.00E+19 Doping Concentration (Na or Nd)
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mu_n mu_p

Resistor Fabrication

DIFFUSED RESISTOR
Aluminum contacts

Silicon dioxide

n-wafer

Diffused p-type region

The n-type wafer is always biased positive with respect to the p-type diffused region. This ensures that the pn junction that is formed is in reverse bias, and there is no current leaking to the substrate. Current will flow through the diffused resistor from one contact to the other. The I-V characteristic follows Ohms Law: I = V/R

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Layout/Mask Layer 1 - Diffusion (green) Top View W

L Side View
P type Diffusion

Resistor termination

N wafer The resistance, R = rhos (L/W)

The sheet resistance rhos, is the resistance of each square L/W is the number of squares long the resistor is said to be.

5 squares in this case

Rochester Institute of Technology - MicroE REP 3/15/2007

If rhos is 100 ohms per square, R = 500 ohms

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Layout/Mask Layer 3 - Contacts (gray) Top View W 10 by 10 microns

Remember, inside the green (diagonally shaded) regions is p type silicon, outside is n type

Side View

contact openings
Oxide Diffusion

N wafer
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Resistor Fabrication
Top View Layout/Mask Layer 4 - Metal (blue) 10 by 10 microns

Side View

Metal (Aluminum) Resistor Symbol N wafer

Oxide Diffusion

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Metal (Aluminum) wiring to the Probe Pads

Probes

Aluminum Pads

5 squares resistor 10 squares

5 squares rhos for aluminum is 0.01 Ohms per square

rhos for diffusion = 100 Ohms per square Rtotal = 10(100) + (5+5)(0.01) = 1000.1 Ohms, therefore Metal wiring does not add very much to the resistance

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Resistor Fabrication

Wafer with silicon dioxide, patterned and etched

This end of the resistor loops were cut off in the picture

MASK # 1 Green is oxide (glass) Gray is bare silicon

20m This resistor is many, many squares long

Diffusion openings

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Resistor Fabrication

After dopants have been diffused in and a new oxide grown

Purple areas are diffused and pink areas are not (the oxide in this area did not allow the dopant to diffuse into the silicon)

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Resistor Fabrication

After thin oxide openings have been patterned and etched

The thin oxide layer is actually part of the transistor fabrication sequence

MASK # 2

Bare Silicon

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After thin oxide growth (part of the transistor process)

1000 of SiO2

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After the contact openings have been patterned and etched

MASK # 3

Contact opening To bare silicon

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Resistor Fabrication

After Aluminum has been deposited

Aluminum short circuits everything at this stage, until it is patterned and etched.

Particle on the microscope lens

Aluminum

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Resistor Fabrication

After aluminum is patterned and etched

Contact
Unused Pad Aluminum

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RESISTOR NETWORK Desired resistor network 500 Layout 400 250

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VARIATIONS ON THE BASIC RESISTOR LAYOUT R = s (10+0.5+0.5)

1 0.5

4 4.5 5.5 6.5

Corner squares count ~ 1/2

10 0.5

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RESISTOR TERMINATIONS

Field Mapping

~ 0 squares

~ 0.5 squares

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