Double Junction and Guard-Ring-Electrode Effects on Crosstalk in Simulated 2D CMOS Compatible Photodiode Arrays

Steven Hinckley and Paul V. Jansz-Drvetzky, Centre of Excellence for MicroPhotonic Systems (COMPS), Edith Cowan University, 100 Joondalup Drive, Joondalup, Australia. Email: s.hinckley@ecu.edu.au Abstract
CMOS imaging arrays in back-illuminated mode provide a means to realize photodiode arrays for high resolution imaging systems [1], provided crosstalk effects can be reduced to the level of those observed in front-illuminated arrays [2-5]. Extending previous simulation crosstalk research on conventional photodiode arrays [6], we have simulated the photocurrent response in front- and back-illuminated 2D three-photodiode pixel arrays, as a function of different structural configurations. These configurations include biased guard electrodes on single junction photodiode pixels, and double junction photodiode pixels. The results obtained show that significant crosstalk suppression can be achieved in front- and back-illuminated arrays for these structures, compared to the conventional single-junction photodiode pixel. To aid in understanding the photo-electronic principle behind improved pixel crosstalk suppression and sensitivity enhancement, an absorption volume proportion for each pixel configuration was compared with the respective pixels photocurrent profile. Generally, the front-illuminated arrays have better crosstalk reduction than the same backwall pixel configuration, due mainly to the relatively closer position of the photogenerated carriers to the pixels depletion region. For both illumination modes, the guarded pixel showed considerably less crosstalk than the naked pixel, due to the guard-ring electric field that forms a curtain around the central image-electrode field. The guard configuration robusts the image electrodes response across a wide doping regime. The outer junction of the double junction photodiode pixel acts in a similar way except the image capture field is also surrounded from underneath. This means that, for thicker substrates, the double junction pixel has better crosstalk suppression than for the guarded pixel, while central quantum efficiency reduction is clearly a problem for the back-illuminated double junction pixel. This is due to the back-illuminated double junction pixels inability to deplete the inner depletion region to the backwall, resulting in lower sensitivity. However, the single and double junction pixels responses converge as the substrate thins, accompanied by a marked improvement in pixel-centre quantum efficiency. However, both show a marked improvement over the single junction, conventional pixel, especially for thinner substrates. Overall, the results indicate the prospect of obtaining significant crosstalk suppression in back-illuminated CMOS imaging arrays through achievable modifications to the array structure.
References 1. S. Hinckley, E.A. Gluszak, & K. Eshraghian, Modeling of device structure effects in backside illuminated CMOS compatible photodiodes. Proceedings of COMMAD2000, Melbourne. IEEE Press, 2002, pp. 399 402. 2. I. Brouk, Y. Nemirovsky, S. Lachowicz, E.A. Gluszak, S. Hinckley, & K. Eshraghian, Characterisation of crosstalk between CMOS photodiodes, Solid State Electronics, 46, 2003, pp. 53-56. 3. J. Briaire, & K.S. Krisch, Principles of substrate crosstalk generation in CMOS circuits, IEEE Transactions on Computer-Aided Design Of Integrated Circuits And Systems, 19(6), 2000, pp. 645 653. 4. I.M. Kang, The simulation of the crosstalk between photodiodes fabricated Using the 0.18m CMOS Process, Seoul, South Korea: Seoul National University, School of Electrical Engineering: SMDL Annual Report 2002. 5. M. Furumiya, H. Ohkubo, Y. Muramatsu, S. Kurosawa, F. Okamoto, Y. Fujimoto, & Y. Nakashiba, Highsensitivity and no-crosstalk pixel technology for embedded CMOS image sensor. IEEE Trans. El. Devices, 48, 2001, pp. 2221-6. 6. S. Hinckley, P.V. Jansz, E.A. Gluszak, & K. Eshraghian, Modeling of device structure effects on electrical crosstalk in back illuminated CMOS compatible photodiodes. Proc. COMMAD2002, Sydney. IEEE Press, 2002, pp. 397 400.