NOTICE OF CHANGE

NOT MEASUREMENT SENSITIVE *

MIL-HDBK-217F NOTICE 1 10 JULY 1992

RELIABILITY

MILITARY HANDBOOK PREDICTION OF ELECTRONIC

EQUIPMENT

To all holdersofMIL-HDBK-217F 1. The following pages of MIL-HDBK-217F New Page(s) vii 5-3 5-4 5-7 5-8 5-9 5-1o 5-11 5-12 5-13 5-14 5-19 5-20 6-15 6-16 7-1 7-2 12-3 12-4 A-1 A-2 A-3 A-4 A-5 A-6 A-7 A-8 A-9 A-1 O A-1 1 A-12 A-13 A-14 A-15 A-16 Date have been revised and supersede the pages listed. Superseded Page(s) .. 23 5-4 5-7 5-8 5-9 5-1o 5-11 5-12 5-13 5-14 5-19 5-20 6-15 S16 7-1 7-2 12-3 12-4 A-1 A-2 A-3 A-4 A-5 A-6 A-7 A-8 A-9 A-1 O A-1 1 A-12 A-13 A-14 A-15 A-16 Date 2 Deoendxr 19QI 2 Deoe~er 1991 2 December 1991 2 Dece@er 1991 Reprinted without 2 Decetier 1991 Reprinted without Reprinted without 2 Decetier 1991 2 Dece~er 1991 Reprinted without 2 December 1991 Reprinted without 2 Decerrber 1991 Reprinted without Reprinted without 2 Dece~er 1991 2 December 1991 Reprinted without Reprinted without 2 Decenber 1991 2 Dece~r 1991 Reprinted without 2 Decentxx 1991 2 Deoenber 1991 2 December 1991 2 Decerlber 1991 2 Decerrber 1991 Reprinted without Reprinted without 2 Dece~r 1991 2 Decetir 1991 2Dece~er1991 Reprinted without 2 December 1991

2 December 1991 2 December 1991 2 December 1991

change change change

2 December 1991 2 December 1991 2 December 1991 2 December 1991

change change change change

2 December 1991 2 December 1991

change change

2 December 1991

change

2 December 1991 2 December 1991

change change

2 December 1991

change

AMSC ~:

NIA Approved for public reiease; distribution uniimited. AREA=RELI 1

MIL-HDBK-217F NOTICE 1

2. 3.

Retain the pages of this notice and insert before the Table .of Contents. Holders of MIL-HOBK-217F wilt verify that page changes and additkms indicated have been entered. The notice pages will be retained as a check sheet. The issuance, together with appended pages, is a separate publication. Each notice is to be retained by stocking points until the military handbook is revised or canceled. Preparing Activity: Air Force -17Project No. RELI-0088

Custodians: Amly-cR Navy - EC Ah Force-17 Review Activities: Army - Ml, AV, ER Navy - SH, AS, OS Air Force -11, 13, 14, 15, 18, 19,99 User Activities: Army - AT, ME, GL Navy - CG, MC, YD, TO Air Force -85

MIL-HDBK-217F NOTICE 1

FOREWORD MIL-HDBK-217F, Notice 1 is issued to correct minor typographical errors in the basic F Revision. MILHDBK-217F (base document) provides the following changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C): 1. New failure rate prediction microcircuits:
q

models are provided for the following nine major classes of

Monolithic Bipolar Digital and Linear Gate/Logic Array Devices Monolithic MOS Digital and Linear Gate/Logic Array Devices Monolithic Bipolar and MOS Digital Microprocessor Devices (Including Controllers) Monolithic Bipolar and MOS Memory Devices Monolithic GaAs Dgital Devices Monolithic GaAs MMIC Devices Hybrid Microcircuits Magnetic Bubble Memories Surface Acoustic Wave Devices

9
q

This revision provides new prediction models for bipolar and MOS microcircuits with gate counts up to 60,000, linear microcircuits with up to 3000 transistors, bipolar and MOS digital microprocessor and coup to 32 bits, memory devices with up to 1 million bits, GaAs monolithic microwave integrated

processor

circuits (MMtCs) with up to 1,000 active elements, and GaAs dgital ICS with up to 10,000 transistors. The Cl factors have been extensively revised to reflect new technology devices with improved reliability, and the activation energies representing the temperature MOS devices and for memories. sensitivity of the dice (XT) have been changed for

The C2 factor remains unchanged from the previous Handbook version,

but includes pin grid arrays and surface mount packages using the same model as hermetic, solder-seated dual in-line packages. and the (MWimnmedal New values have been included for the qual~y faaor (~)t factor (nE).
Th8 model

the Ieamiw

factor (XL)! to

for hybrid microcircuits has been revised to be si~ler

use, to delete the temperature

dependence

of the seal and interconnect failure rate contributions, and to

provide a method of calculating chip junction temperatures. 2. A new model for Very High Speed Integrated Ckcuits (VHSIC/VHSIC Scale Integration (VLSI) devices (gate oounts above 60,000). The reformatting of the entire handbook to make it easier to use. A reduotion in the number of environmental faOtOfS (~E) from 27 to 14. A revised failure rate model for Network Resistors. Revised models for MS and Klystrons based on data supplied by the Electronic Industries Association Microwave Tube Division. Like) and Very Large

3. 4. 5. 6.

Supersedes page vii of Revision F

vii

MIL-HDBK-217F NOTICE 1

5.1

MICROCIRCUITS,

GATE/LOGIC

ARRAYS

AND

MICROPROCESSORS

DESCRIPTION 1. Bipolar Devices, Digital and Linear Gate/Logic Arrays 2. MOS Devices, Digiial and Linear Gate/Logic Arrays 3. Fieid Programmable Logic Array (PLA) and Programmable Array Logic (PAL) 4. Microprocessors

Bi@at Dgital and -hear Gate/Logic Array Die Con@exity Failure Rate -Cl
Dgital No. Gates 1 101 1,001 3,001 10,001 30,001 to to to to to to 100 1,000 3,000 10,000 30,000 60,000 I c, .0025 .0050 .010 .020 .040 .080 Linear No. Transistors 1 101 301 1,001 to to to to 100 300 1,000 10,000 1 c, .010 .020 .040 .060 PLA/PAL No. (%tes up to 200 201 to 1,000 1,001 to 5,000 c, .010 .021 .042

~ Dgital No. Gates 1 101 1,001 3,001 10,001 30,001 to to to to to to 100 1,000 3,000 10,000 30,000 60,000

Digital and Linear Gate/Logic Array Die Con@exity Failure Rate - Cl Linear No. Transistors 1 101 301 1,001 to to to to 100 300 1,000 10,000 PLA/PAL No. Gates up to 500 501 to 2,000 2,001 to 5,000 5,001 to 20,000

c, .010 .020 .040 .080 .16 .29

c, .010 .020 .040 .060

c, .00085 .0017 .0034 .0068

q NOTE:

For CMOS gate counts above 60,000 use the VHSICA/t+SIC-Like

model in Section 5.3

Die Corr@ex&y Failure Rate -Cl No. Bits UP to 8 Upto 16 lJP to 32 Bipolar c, .060 .12 .24 MOS c, .14 .28 .56 I

All Other Mc lel Parameters Parameter Refer to Section 5.8 C2 Section 5.9 Section 5.10

Supersedes

page

5-3

of Revision

5-3

MIL-HDBK-217F NOTICE 1

5.2

MICROCIRCUITS,

MEMORIES DESCRIPTION 1. Read Only Memories (ROM) 2. Programmable Read Only Memories (PROM) 3. LMraviolet Eraseable PROMS (UVEPROM) 4. Flash,- MNOS and Floating Gate Electrically Eraseable PROMS (EEPROM). Includes both fbating gate tunnel oxide (FLOTOX) and textured potysilicon type EEPROMS 5. Static Random Access Memories (SRAM) 6. Dynamic Random Access Memories (DRAM)

Die Complexity Failure Rate - Cl EEPROM, EAPROM .00085 .0017 .0034 .0068 SRAM (htfos & BiCMOS) .0078 .016 .031 .062 ROM, PROM .0094 .019 .038 .075 Big lar

Merno~ Size, B (Bits) up to 16K 16K<BS64K ~K < Bs 256K 256K<Bs1M

ROM .00065 .0013 .0026 .0052

DRAM .0013 .0025 .0050 .010

SRAM .0052 .011 .021 .042

A, Factor for Total No. of Pmgrarnning Cycles Over EEPROM Life, C up to 100 100< CS2OO 200< CS500 500< CS1K 1K<CS3K 3K<CS7K 7K<CS15K 15K<CS20K 20K<CS30K 30K<CSIOOK IOOK<CS200K 200K < C s 400K 400K<CS500K 1. 2. Al =6.817x

*-
TexturedFlotox .00070 .0014 .0034 .0068 .020 .049 .10 .14 .20 .68 1.3 2.7 3.4 10-6 (C) Poly2 .0097 .014 .023 .033 .061 .14 .30 .30 .30 .30 .30 .30 .30

Factor for Xw

Cakulation

Total No. of Programmin~ [ Cycles Over EEPROM Textured-Poly Life, C UP to 300K 300K < C s 400K 400K < C s 500K o 1.1 2.3

1
A2

Atl Other Ma el Parameters Refer to Parameter %T c~ ~EI ~) XL Section 5.8 Section 5.9 Section 5.10 Page 5-5

&yC (EEPROMS onty)

No underlying equation for TexturedPoty. ~= .

For all other devices

5-4

Su~efsedes

page

5-4

of Revision

MIL-HDBK-217F NOTICE 1
5.3 MICROCIRCUITS, VHSIC/VHSIC-LIKE AND VLSI CMOS

DESCRIPTION CMOS greater than 60,000 gates ~ = %D%FGnVCD + ~p~E~@FJT + ~~s FaihreW106 Hour.
4

Die Base Failure Rate - ~D Part Type Logic and Custom Gate Array and Memory 1
I

BD 0.16 0.24 1

Al Other Model Parameters Refer to Parameter XT ~E, ~Q Section 5.8 Section 5.10

Package Type Correction Factor - ~pT #

I

Manufacturing Process Correction Factor - XMFG Manufacturing QML or QPL Non QML or Non QPL Process MFG .55 2.0

Package Type DIP Pii Grkf my Chip Carrier (Surface Mount b Technology)

Hermetic 1.0 2.2 4.7

PT Nonhermetic 1.3 2.9 6.1

Die Corr@exity Correction Factor- ~D -. Feature Size (Microns) .80 1.00 1.25 I As.4 8.0 5.2 3.5 ,4< As.7 14 8.9 5.8 Die An3a (cm*) .7< Asl.019 13 8.2 1.0< As2.O 38 25 16 2.0< A s 3.0 58 37 24

b-w)(H4))+%
Die Area Conversion: cm2 = MIL2 + 1!55,000

A = Total Scribed Chip Die Area in cmz

X~ = Feature Sue (rnicmns)

Pack~e Nu~r

Base Failure Rate - ~p . of Pins BP .0026 .0027 .0029 .0030 .0030 .0031 .0033 .0036 .0043 .0043 .0047 .0060 ((1.72X 10-5) (NP))

Electrical OverStress Failure Rate - kac ~ VTH (ESD SUSC8@bll~ (vOkS))* EOS o1000 .065 .053 .044 .029 .0027 /.00876

24 20 40 44 48 52 64 84 120 124 144 220 kBp NP = = .0022+

>1000-2000 >2000-4000 >400016000 > 1600C) 4 ~S VW= = (-In (1 -.00057 exp(- .0002 V~)) ESD Susceptibility (volts)

Number of Package Pins

Vottage ranges whch will cause the part to fail. If unknown, use O -1000 votts.

Supersedes page 5-7 of Revision F

57

MIL-HDBK-217F

5.4

MICROCIRCUITS,

@As

MMIC

AND

DIGITAL

DEVICES

DESCRIPTION Gallium Arsenide Mimwave Monolithic Integrated Circuit (~MMIC) and &As ~d hte(jmted Ciiuits lkw MESFET Transistors and Gold Based Metallization

~=

[ cl~~A

+ C2nE J 7cL~

FailuresH06

Hours

w:

Die Complexity Faihre Rates - c, c,

/ 1

Complexity (No. of Eiements) 1 to 100 101 to 1000 1. Cl

Device Application Factor - Xi . Application MMIC -S

Low NokBe&b wPower(sloornw)

4.5 7.2

accounts for the folbwing active transistor, diodes.

Driver &Hi@ Unknown

POwer(>100mW)

1.0 3.0 3.0

elements:

Digital Devices All Dgital AppIiitions m: Die Complexity Failure Rates - Cl Complexity (No. of Elements) 1 to 1000 1,001 to 10,000 1. Cl c, All Other Model Parameters Parameter Refer to
%T

1.0

25 51

S-ion

5.8

aocounts for the following active transistors, diodes.

c~ ~E, XL,
~Q

Section 5.9 Section 5.10

elements:

5-8

MIL-HDBK-217F NOTICE 1
5.5 DESCRIPTION Hybrid Microcircuits MICROCIRCUITS, HYBRIDS

Nc kc

= =

Number of Each Particular Corrpnent Failure Rate of Each Particular Component

The general procedure for cfevebping an overall hybrid failure rate is to calculate an individual faiiure rate for each cmmponent type used in the hybrid and then sum them. This summation is then modified to accwnt for the overall hybrid function (%F), screening tevel (~), and maturity (XL). The hybrid package failure rate is a function of the active component failure modified by the environmental faCtOf (i.e., (1 + .2 ~E) ). Onty the conpment types listed in the following table are oonsk%md to contribute significantly to the overall failure rate of most hybrids. All other component types (e.g., resistors, inductors, etc.) are cxmsidered to contribute insignificantly to the overall hybrid failure rate, and are assumed to have a failure rate of zero. This simplifkxtion is valid for most hybrids; however, if the hybrid consists of mostiy passive components then a failure rate should be calculated for these devices. If factoring in other component tYp& aSWme ma = 1,XE =1 and TA = Hybrid Case Temperature for these calculations. Determination of X. Determine Ac for These Component Micmcircults Types 5 C2=0, ~Q=l, Handbook Section Mak; These Assumptions When Determining c ~L = 1, TJ as Determined from = O (for VHSIC),

Section 5.12, ~P nE = 1 (fOr SAW). Discrete Semiconductors 6

XQ = 1, TJ as Determined from Section 6.14, ~E=l.

Capacitors

10

%=lTA RE=l.

= Hybrid Case Temperature,

NOTE:

tf maxirrwrn rated stress for a die is udumwn, assume the same as for a discretely package die of the same type. If the same die has several ratings based on the discrete packaged type, assume the lowestrating. Power rating used should be based on case temperature for discrete semiconductors. Circuit Functbn Faotor - %F Circuit Type I ~F I All Other H ybrid Model Parameters XL, ~Q,
~E

Refer to Section 5.10

Digital Video, 10MHz<f<l Micruwave, f >1 GHz Linear, f <10 MHz Power GHz

1.0 1.2 2.6 5.8 21 .

Supersedes page 5-9 of Revision F

5-9

MIL-HDBK-217F

5.6

MICROCIRCUITS,

SAW

DEVICES DESCRIPTION Surface Acoustk Wave

= 2.1 XQ ZE Failures/106

Hours

Quality Factor - ZO Screening Level

7CQ

Environmental Faotor -xc

L

Environment % GF %

~E .5 2.0 4.0 4.0 6.0 4.0 5.0 5.0 8.0 8,0 .50 5.0
12

10 Temperature Cycles (-55~ to +1250C) with end point electrical tests at temperature extremes. None beyond best cornrnerkal practioes.

.10

1.0

Ns Nu Alc IF %c UF RW SF lul~ ML CL

220

MIL-HDBK-217F

5.7

MICROCIRCUITS, MAGNETIC BUBBLE MEMORIES

assembly mnsisting of the

The magnetic bubble memory device in its present form IS a non-hermetic following two major structural segments: 1.

A basic bubble chip or die consisting of memory or a storage area (e.g., an array of minor loops), and required control and detection elements (e.g., generators, various gates and detectors). A magnetic structure to provide contmlied magnetic fields consisting of permanent coiis, and a housing. magnets,

2.

These two structural segments of the device are interconnected by a meohanioai substrate and lead frame. The interconnect substrate in the present technology is norrnaily a prtnted circuit board. It should be noted that this modei does not inciude extemai support rnioroeiectronic devices required for magnetic bubbie memory operation. The rrmdei is based on Reference 33. The generai form of the failure rate model is: ~= where: x, = Faiiure Rate of the Control and Detection Stmcture xl = ~Q [~cc ~.
11 ~Tl ~w + (NCC21 +c2)@~D~L

Al

+ ~~

Faii.re#106Wum

Failure Rate of the Memory Storage Area

% I
%T=(.1)8W Use: Ea = Ea TJ = =

Chips Per Package - Nc Number of Bubble Chips per Packaged Device

Device Complexity Faiiure Rates tor Contmi and Detection Structure - Cl 1 and C21 c,, c~, N, == = = .00095 (N1).40 .0001 (N1)226 Number of Dissipative Elements on a Chip (gates, detectors, generators, etc.), N1 s 1000

Temperature -Ea [ 8.63 x 10-5

Factor - ~T 1 TJ +273-%6 1

)1

.8 to Calculate %~1 .= to Catiiate %T2 (W),

Junctbn Teqxwature 25$ TJS 175

TJ

TCASE + 10C

MIL-t+DBK-217F NOTICE 1

5.7

MICROCIRCUIT,

MAGNETIC

BUBBLE

MEMORIES

Write Duty Cycle Factor - ~ XW

[Uu

Device Ccm@exity Failure Rates for Memory Storage Structure - Cl 2 and C22 C,* = = = .00007 (N2)3 .00001 (N2)-3 Number of B~s, N2s 9 x 106

(q.3 1 for Ds.030r RAN22154 <, C*Z N2 No. of Reads per Write

Icw

Avg. Device Data Rate Mfg. Max. Rated Data Rate

NOTE: For seed-bubble generators, divide nw by 4, or use 1, whichever is jreater.

Atl Other Model Parameters Parameter Section c~ ~E, ~Q, XL 5.9 5.10

Duty Cycle Factor - ZD

q) =

.9D + .1 Avg. Device Data Rate Mfg. Max. Rated Data Rate <, -

D=

5-12

Supersedes

page

5-12

of Revision

MIL-HDBK-217F NOTICE 1

5.8

MICROCIRCUITS,

%T TABLE

FOR

ALL

-In

I
T I k

Supersedes page 5-130f

Revision F

5-13

MIL-HDBK-217F

5.9

MICROCIRCUITS,

C9

TABLE

FOR

ALL

Package Failure Rate for all Microcircuits - C2

Packaaa Tvoe . -Hermetic: DIPs w/Solder or Weld Seal, Pin Grid Army (PGA)l , SMT (Leaded and Nonleaded) .00092 .0013 .0019 .0026 .0034 .0041 .0048 .0056 .0064 .0079 .0087 .010 .013 .015 .025 .032 .053 .076 .097 .00047 .00073 .0013 .0021 .0029 .0038 .0048 .0059 .0071 .0096 .011 .014 .020 .024 .048 Norlhermetic: DIPs, PGA, SMT (Leaded and Nonleaded)5

Number of Functional Pins, Np

DIPs with Glass SeaF

Flatpacks with Axial Leads on 50 Mil Centers3

Cans4

3 4 : 10 12 14 16 18 22 24 28 36 40 64 80 128 180 224

.00022 .00037 .00078 .0013 .0020 .0028 .0037 .0047 .0058 .0083 .0098

.00027 .00049 .0011 .0020 .0031 .0044 .0060 .0079

.0012 .0016 .0025 .0034 .0043 .0053 .0062 .0072 .0082 .010

.011
.013 .017 .019 .032 .041 .068 .098 .12

1. 3.

C2=2.8

104

(N$ 1W .82

2. 4.

C2 = 9.0 x 10-5 (NP) .5 Cz = 3.0 x 10-5 (N$2.01

Cz = 3.0 x 10-5 (N$l

5.

C2=3.6

104 (N$m

NOTES: 1. 2. 3. 4. SMT: Suffaoe Mount Tectmdqy Pm

DIP: Dual h!-ine

tf DIP Seal type is urWmwn, a8stmm @ass m

pacbge

fabe

rate (C2) aooounts for failures associated only with the package itself.

Fallums associated with mounting the package to a cimutt board are acoounted for in Section 16, Interconnection AsseMies.

514

MIL-HDBK-217F NOTICE 1

5.12

MICROCIRCUITS, .

TJ

DETERMINATION,

(FOR

HYBRIDS)

Jr

-,

----

--

--------------

Conductivity,

Material

Typical Usage

Typkal Thiikness, + (In.) 0.010 0.0070 0.0001

Feature From Figure 5-1 A A B B/E B/E B c D D F F F

Ki W/in2 () Vln 2.20 .76 6.9 1.3 .0060 .15 .66 .64 6.6 .42 4.6 9.9

1 Ki ()()

~i

( in2 QC/W .0045 .0092 .000014 .0023 .58 .023 .0045 .039 .0038 .048 .0043 .0020

Silicon

Chip Device Chip Devioe

Au EuWctic Solder Epoxy (Dielectric) Epoxy (Conductive) mid Fih Dielectric

Chip Attach Chip/Substrate Chip/Substrate Chip Attach Glass Insulating Layer Substrate, MHP Substrate, PHP Case, MHP Case, MtiP Case, PHP Attach Attach

0.0030 0.0035 0.0035 0.0030 0.025 0.025 0.020 0.020 0.020

Alumina Beryllium Oxide Kovar Aluminum Copper NOTE:

MHP: Muttichip Hybrid Package, PHP: Power Hybrid Package

(Pwr: z 2W, Typically)

n Ki L, A=

= = -

Number of Material Layers Thermal conductivity of ith Material

Thuhess

W/in* ~ (User Pmided () of ith Matehal (in) (User Provided or Fmrn TabIe)

or From Tabie)

D& Ama (#).

If Die Area cannot be readlfy determined, estimate as fotkws: .041~

A= [ .00276 (No. of Die Adhte Wire Terminals)+

Estimate

TJ as Follows: TJ = Tc + (e~ (p~

Tc eJ~ PD

= Hybrid Case Temperature (~). = Junction-to-Case =

ff unknown, use the Tc Default Table shown in Section 5.11.

Thermal Resistance (C/W) (As determined above)

Die Power Dissipatbn (W)

Supersedes page 5-19 of Revision F

5-19

MIL-HDBK-217F

5.13 Example Given:

MICROCIRCUITS, 1: CMOS Digftal

EXAMPLES Gate Array

A CMOS digital timing chip (4046) in an airborne inhabited argo application, case temperature 48C, 75mW power dissipation. The device k prwured with normal manufacturers screening consisting of temperature cycJing, constant acceleration, electrical testing, seal test and external visual inspection, in the sequence given. The component manufacturer also performs a B-level bum-in followed by electrical testing. All screens and tests are performed to the applicable MILSTD-883 screening methd. The pakage is a 24 pin ceramic DIP with a glass seal. The device has been manufactured for several years and has 1000 transistors. Section 5.1

c1 XT

= =

.020 .29

1000 Transistor

-250

Gates, MOS Cl Table, Digital Column 5.11 = 50C 5.8, Digital MOS ~mn.

Determine TJ from -ion TJ = 48C + (28C/W)(.075W) Determine XT from s~ion

c~ nE
~Q

= =
=

.011 4.0 3.1

Section 5.9 Section 5,10 Section 5.10 Group 1 Tests Group 3 Tests (B-1evel) TOTAL 50 Points o~ 80 Points

XL

Section 5.10 Failure/106 Hours

~=

[ (.020)(.29)

+ (.011)

(4)]

(3.1)(1)

-.15

Example Given:

2:

EEPROM that is expeoted to have a TJ of 80C and experience 10,000

A 128K Fiotox EEPROM

reacVwrite cycles over the life of the system. The part k procured to all requirements of Paragraph 1.2.1, MIL-STD-863, Class B screening level requirements and has been in a~n for three years- H ~ ~a~ in a 28 @n DIP with a glass seal and will be USed in art airborne uninhabtied cargo application. ~=(cl~T+c2w+*)mfiL Section 5.2

c, %T C2

= = -

.0034 3.8 .014

Section 5.2 Section 5.8 Section 5.9

t
I

MIL-HDBK-217F NOTICE 1

6.8

TRANSISTORS,

HIGH

FREQUENCY,

GaAs

FET

Matching Network Factor - XM Matching Inputand Output Input Only None 1.0 2.0

Environment Factor - XC
L

Envkonrnent %

~E

1.0
2.0 5.0 4.0 11 4.0 5.0 7.0 12 16 .50 9.0 24 250

%
%t 4.0 Ns Nu AC Qualtty Fac?or - ~ Quality JANTXV MN-rx JAN Lower .50 IF Am UF RW

1.0
2.0 5.0

SF
MF ML C

Supersedes page 6-15 of Revision F

6-15

MIL-HDBK-217F

6.9

TRANSISTORS,

HIGH

FREQUENCY,

S1 FET DESCRIPTION Si F=s (Avg. Power< 300 mW, Freq. >400

SPECIFICATION MIL-S-19500

Mliz)

Failures/l 06 Hours

Base Failure Rate - ~ Quality

Quality Factor - ~
YCQ

I
h

MOSFET JFET I

.060 I .023 \

JANTXV JANTX JAN

.50 1.0 2.0 5.0

Temperature Factor - XT TJ (oC)

25 %T

Lower XT
3.9

TJ (C)
105

1.0

30 35
40 45 50 55 60 65 70 75 80 85 90 95 100 %T = exp

1.1 1.2
1.4 1.5 1.6 ;:: 2.1 2.3 2.5 2.7 3.0 3.2 3.4 3.7 -1925 (( q;

110
115 120 125 130 135 140 145 150 155 160 165 170 175

4.2
4.5 4.8 5.1 5.4 ::: 6.4 H 7.5 7.9 8.3 0.7

Environment Factor - xc Environment

GB *

1.0
2.0 5.0 4.0

Nu Ac IF Uc

11 4.0 5.0 7.0 12 16 .50 9.0 24 250

273

- ~

1 ))

TJ -

UF
Junckn Temperature (C)

&w SF MF ML c,

MIL-HDBK-217F

7.1

TUBES,

ALL

lYPES

EXCEPT

TWT AND

MAONETRON

DESCRIPTION All Types Except Traveling Wave Tubes and Magnetrons. Includes Recehmm, CORT,Thyratron, Crossed F@ld Amplifier, Pulsed Gridded, Transmitting, Vidicons, Twystron, Puked
Klystron, CW KJystron -

b=

%XL%

Failures/l OG Hours

Base FaWe Rate - ~

(Includes Tube Type Receiver Triode, Tetrode, Pentode Power Rectifier CRT Thyratm Crossed Fi@d AmPtifief QK681
SFD261

Both

Rafbdof b 5.0 10 Oc

and We@rout
Tube Type

Faltures)

Klystron, Low Power, (e.g. Local OscNator)

Klystron,

I I I

260
150

Pulsed Gridded 2041 6952

7835 Tra;$rnitting Tnode, Peak Pwr. s 200 KW, Avg. Pwr. s2KW, Freq. S200MHz Tetrode & Pentode, Peak Pwr. 5200 W, Avg. Powers 2KW, Freq. s200KW If any of the above limits exceeded Vidicon Antimony Trisulfide (Sb2S3) Photoconductive Material Silicon Diode Array Photoconductive

140 390
140

75 100

250

51
I

Maledal Twystron VA144 VA145E VAI 45H VA913A Klystron, ~UkOCf* 4wtf WOOOLF 8568 L3035 L3250 L3403 SAC42A VA842 Z501 OA ZM3038A

48 850 450 490

230 43 230 66 69 93

Continuous Wave* 3K3000LQ 3K50000LF 3K21 000010 3KM300LA 3KM3000LA 3KM50000PA 3KM50000PA1 3KM50000PA2 4K3CC 4K3SK 4K50000LQ 4KM50LB 4KM50LC 4KM50SJ 4KM50SK 4KM3000LR 4KM50000LQ 4KM50000LR 4KM170000LA 8824 8825 8826 VA800 E VA853 VA856B VA888E

9.0
54

150
64 19

110 120 150 610 29 30 28 15 38 37 140 79 57 15 130 120 280 70 220 65 230

If the CW Klystron of fntemst k not listed above,

uae the Alternate CW Klystron ~ Table on the following page.

100 18 150 190

c If the pulsed Klystron of interest is not listed above, use the Altamate Pulsed Klystron ~ Table on the following page.

/-1

MIL-HDBK-217F NOTICE 1
7.1 TUBES, ALL TYPES EXCEPT IWT AND MAGNETRON

Alternate Base Failure Rate for Pulsed Klystrons - A )@fw) .01 .30 .80 $: 5.0 8.0 .2 16 16 16 17 18 19 21 2228 31 .4 16 16 17 17 20 22 25 45 .6 16 17 17 18 21 25 30 34 60 F(GHz) .8 1.0 16 17 18 18 23 28 35 40 75 16 17 18 19 25 31 40 45 90 2.0 16 10 21 22 34 45 63 75 4,0 16 20 25 28 51 75 6.0 16 21 30 34 <1

Learning Factor - X[ T (years) L 10

2 23

2.3
1.0

..

110 ~L = w = T =
10(T) -2, 1 sT<3

0
5

180

%)
F P.

2.94 (F)(P) + 16 Operating Frequency in C3HZ,0.2s Fs 6 Peak Output PowerIn MW, .01 s P ~ 25 and

IO, Ts1 1,T23

Number of Years since introduction to F*td Use

P s 490 F-2.95 Sea previouspage for other Klystron Base Failure

Rates. Environment Environment GB Factor - nE ~E

.50 1.0
14

GF
Atternate* Base Fatture Rate for CW K@trona - ~ P(KW) 0.1 $; 5.0 8.0 10 30 50 80 100 300 30 :; 33 34 35 45 E 80 500 F(MHz) 8001000 2000 4000 34 34 36 38 38 39 40 41 42 47 48 49 50

GM
6000 57 57 58 800C 66 66

Ns Nu %C iF

8.0
24

31 33 32 33 333435 34 35 35 37 36383943 :H: 71 81

5.0 8,0 6.0

12

%c
*UF
Am

73

40 .20 22 57 1(m I

SF
%P = 0.5P + .aM6F + 29

MF
Average Output Power in KW, O.ls Ps 100 and P s 6Lqlo)6(F)- .7

ML c

Opamting Frequencyin MHz. 300s Fs8000

Sao pr.vious page for other Ktystmn Base Failure Rates.

7-2

Supersedes page 7-2 of

Revision

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Azuu

MIL-HDBK-217F NOTICE 1

12.2

ROTATING

DEVICES,

SYNCt-fROS

AND

RESOLVERS

DESCRIPTION Rotating Synchros and Resolvers

kp = kbfi~x~z~ Failures/l OG Hours

N O TE: Synchros and resolvers are predominately used in service requiring only slow and infrequent motion. M-echanical wearout problems are Infrequent so that the electkal failure mode dominates, and no mechankal mode failure rate is required in the model above.

i3ase Failure Rate - ~ TF (Z) 30 35 40 45 50 55 60 65 70 75 80 k~ .0083 .0088 .0095 .010 .011 .013 .014 .016 .019 .022 .027 TF (%) 85 90 95 100 105 110 115 120 125 130 135 h .032 .041 .052 .069 .094 .13 .19 .29 .45 .74 1.3

Number of Brushes Number of Brushes 2 3 4

Factor- XN
1 %N 1.4 2.5 3.2

Environment Factor - n. Environment

ltE

GB
%
TF

1.0
2.0 12 7.0 18 4.0 6.0 16

= .00535 exp CJ:3)85

= Frame Temperature (C)

GF
%

Ns
If Frame Te~rature is Unknown Assume TF = 40 C + Ambient Temperature

Nu
AC IF

Size Factor - ZS %s DEVICE TYPE Synchro Resolver

I I

UF Size 18 or LaWr 1 1.5 RW SF MF

25 26 .50 14 36

Size 8 or Smaller 2 3

Size 10-16

1.5 2.25

680

I
I

Supersedes

page

12-3

of Revision F

12-3

MIL-HDBK-217F
._. 12.3 ROTATING DEVICES, ELAPSED TIME METERS

DESCRIPTION -. --

mapsea

= b%

Failures/l Oe l-tours

Base Faik.we Rate - k

Type A.C. Inverter Driven Commutator D.C. I Ab 20 30 80

Environment Factor - Xr * Environment %3 + GM

his

nE 1.0 2.0
12

7.0 18 5.0 8.0 16 25

26

Nu AC
Temperature -rating Stress Factor - ~T T (%) I XT T (C)/Rated

IF Am

o to

.5 .6 .0 1.0

.5 .6 .8 1.0

UF
RW

SF MF
ML CL 14 38 N/A

. .50

12-4

M1l--HDBK-2l 7F
APPENDIX A: PARTS COUNT RELIABILITY PREDICTION

Parts Count Reliability PredictIon - This prediction method is applicable during bid proposal and early desgn phases when insufficient Informatbn is avaiiable to use the parl stress anaiysis models shown in the main body of this Handbook. The informat~n needed to appiy the method is (1)generic part types (inciuding complexity for micmcircuk) and quantities, (2) part quality Ieveis, and (3) equipment environment. The equipment failure rate is obtained by looking up a generio failure rate in one of the f oiiowing tables, multiplying it by a quali factor, and then summing it with failure rates obtained for other components in the equipment. The general mathematical expression for equipment failure rate with this method is: i= n EQUiP = Z i i= 1 (~~i Equation 1

for a given equipment environment where: Total equipment fafiure rate (Failures/106 Hours) 06 Hours)

Generic faiiure rate for the i h generic part (Faiiure#l Quaiity factor for the i h generic part th generic part Quantity of I

Number of different generic part categories in the equipment Equation 1 appiies if the entire equipment is being used in one environment. If the equipment comprises severai units operating in different environments (such as avionics systems with units in airborne inhabited (Ai) and uninhabited (Au) environments), tmn Equat@n 1 shou~ ~ aPPiied to the portions of the equipment in each environment. These environment-equipment faiiure rates should be added to determine totai equipment failure rate. Environmental symbols are defined in Section 3. The quality factors to be used with each part type are shown with the applicable Ag tabies and are not necessarily the same values that are used in the Part Stress Analysis. Microcircuits have an additional multiplying faotor, %L, which aooounts fOr the ~tUfitY Of the ~n@aduffn9 Pmce~. For dev~s in production tw years or more, no rnodifioatbn fs needed. For those in pmductfon less than two years, % should be nnJlt@lied by the appmpdate ~ factor (See page A4).

It should be noted that m gene~ failure rates are shown for hybrfd rnbrodrcults. Each hybrfdk a talrty unique devke. Shoe none of these devices have been standardized, their complexity canmt be determined from their name or function. identically or similarly named hybrids can have a wide range of complexity that thwarts categorization for pwposes of this prediction method. If hybrkfs are anticipated for should be thoroughly Investigated on an individual basis with a design, their use and instruction application of the prediction model in Section 5.

The failure rates shown in this ~ndlx were oabuiated by assigning rnckel default values to the failure rate models of Seotbn 5 through 23. The speolfio defwk vake6 used for the model parameters are ShOWfl with the ~ Tables for tiUOCiKMitS. Default pararl10tef6 for all other part classes are sununarized in
the tabies starting on Page A-12. For parts with characteristics which differ signif~ntiy from the assumed defautts, or parts used in large quantities, the underlying models in the main body of this Handbook can

be used.

A-1

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MIL-HDBK-217F NOTICE 1
APPENDIX A: PARTS COUNT

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MIL-HDBK-217F NOTICE 1
APPENDIX A: PARTS COUNT

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MIL-HDBK-217F
APPENDIX A: PARTS COUNT

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AP ENDIX A: PARTS COUNT

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MIL-HDBK-217F NOTICE 1
APPENDIX A: PARTS COUNT

A-6

Supersedes page A-6 of Revision F

MIL-HDBK-217F
NOTICE . 1 APPEhlDIX A: PARTS COUNT

?%persedes page A-7 of Revision F

A-7

MIL-HDBK-217F NOTICE 1
DIX A: PARTS COUNT
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MIL-HDBK-217F NOTICE 1
APPENDIX A: PARTS COUNT

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MIL-HDBK-217F
APPENDIX A: PARTS COUNT

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APPENDIX A: PARTS COUNT

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MIL-HDBK-217F NOTICE 1
APPENDIX A: PARTS COUNT

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MIL-HDBK-217F NOTICE 1
APPENDIX A: PARTS COUNT

A-14

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MIL-HDBK-217F
APPENDIX A: PARTS COUNT

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MIL-HDBK-217F NOTICE 1
APPENDIX A: PARTS COUNT

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