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KSP10

KSP10
VHF/UHF transistor

TO-92

1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor


Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO PC PC TJ TSTG Rth(j-c) Rth(j-a) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation (Ta=25C) Derate above 25C Collector Power Dissipation (TC=25C) Derate above 25C Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 30 25 3.0 350 2.8 1.0 8.0 150 -55~150 125 357 Units V V V mW mW/C W W/C C C C/W C/W

Electrical Characteristics Ta=25C unless otherwise noted


Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob Crb Ccrbb Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Collector Base Feedback Capacitance Collector Base Time Constant Test Condition IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=25V, IE=0 VEB=2V, IC=0 VCE=10V, IC=4mA IC=4mA, IB=0.4mA VCE=10V, IC=4mA VCE=10V, IC=4mA, f=100MHz VCB=10V, IE=0, f=1MHz VCB=10V, IE=0, f=1MHz VCB=10V, IC=4mA, f=31.8MHz 0.35 650 0.7 0.65 9.0 60 0.5 0.95 V V MHz pF pF ps Min. 30 25 3.0 100 100 Max. Units V V V nA nA

* Pulse Test: PW300s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

KSP10

Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000

10000

VCE = 10V

IC = 10 IB

hFE, DC CURRENT GAIN

100

1000

VBE(sat)

10

100

V CE(sat)

1 1 10 100 1000

10 0.1

10

100

1000

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

10000

140

VCE = 10V f=100MHz

120

], INPUT ADMITTANCE

1000

100

80

gib
60

100

-bib
40

yib[
20 100

10 1 10 100

1000

IC[mA], COLLECTOR CURRENT

f[MHz], FREQUENCY

Figure 3. Current Gain Bandwidth Product

Figure 4. Rectangular Form

], FORWARD TRANSFER ADMITTANCE

100 90 80 70

], OUTPUT ADMITTANCE

-10

bfb
60 50 40 30 20 10 0 -10 -20 -30 100 1000

-20

1000MHz
-30

-gfb

700
-40

yob[

-60 0 10 20 30 40 50 60 70 80 90

gib[

yfb[

Figure 5. Polar Form

2002 Fairchild Semiconductor Corporation

400
-50

200

100

f[MHz], FREQUENCY

Figure 6. Rectangular Form

Rev. A2, September 2002

KSP10

Typical Characteristics (Continued)


90

80

yfb[ ], REVERSE TRANSFER ADMITTANCE

70

60

200

400 600

],

jbfb[

gfb[

Figure 7. Polar Form

], OUTPUT ADMITTANCE

],

jbrb[

-1

-2

-3

yob[

-4

-5 -2.0

-1.6

-1.2

-0.8

-0.4

0.0

gfb[

Figure 9. Polar Form

16

14

12

10

1000MHz

],

jbob[

700
6

400 200 100

0 0 2 4 6 8

gob[

Figure 11. Polar Form

2002 Fairchild Semiconductor Corporation

50

100
40

700

-brb

30

1000MHz
20

10 70 60 50 40 30 20 10 0 -10 -20 -30

0 100

1000

f[MHz], FREQUENCY

Figure 8. Rectangular Form

10 9 8 7 6 5 4 3 2

100 200 400

bob

700

gob
1

1000MHz
0.4 0.8 1.2 1.6 2.0 0 100 1000

f[MHz], FREQUENCY

Figure 10. Rectangular Form

Rev. A2, September 2002

KSP10

Package Dimensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60


0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

TRADEMARKS
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms


Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2002 Fairchild Semiconductor Corporation

Rev. I1

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