MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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RF Transistor
NPN Silicon
COLLECTOR 1 3 BASE 2 EMITTER

BF199

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 25 40 4.0 100 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C

1 2 3

CASE 2904, STYLE 21 TO92 (TO226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO 25 V(BR)CBO 40 V(BR)EBO 4.0 ICBO 100 nAdc Vdc Vdc Vdc

Motorola SmallSignal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996

BF199
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 7.0 mAdc, VCE = 10 Vdc) BaseEmitter On Voltage (IC = 7.0 mAdc, VCE = 10 Vdc) hFE 40 VBE(on) 770 900 85 mVdc

SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 4.0 mAdc, VCE = 10 Vdc, RS = 50 , f = 35 MHz) fT 400 Cre Nf 2.5 0.25 0.35 dB 750 pF MHz

Motorola SmallSignal Transistors, FETs and Diodes Device Data

BF199
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 1000 700 500 300 200 100 VCE = 10 V TA = 25C BF199 10

C, CAPACITANCE (pF)

2 Cib 1 0.7 0.5 0.4 0.3 0.2 Cob

20 10

Cre @ IE = 0

0.2 0.3 0.5 0.7 1 3 5 10 20 IC, COLLECTOR CURRENT (mA)

100

0.1

0.2

0.5 1 3 5 10 20 VR, REVERSE VOLTAGE (VOLTS)

Figure 1. CurrentGain Bandwidth Product

Figure 2. Capacitances

100 VCE = 10 V TA = 25C hFE, DC CURRENT GAIN VCE = 10 V 50 100 MHz

200 100 70 50 30 20 10 0.1 mmhos BF199

20 10 5

45 MHz 10.7 MHz b11e 470 kHz < 0.2 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)

2 1

0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

Figure 4. b11e

100 VCE = 10 V 50 45 MHz 100 MHz

2000 1000 VCE = 10 V 500 mhos 45 MHz 100 MHz

mmhos

20 10 5

10.7 MHz

200 100 50

10.7 MHz

2 1 b21e, at 470 kHz < 0.5 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)

20

470 kHz 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7

Figure 5. b21e

Figure 6. b22e (boe)

Motorola SmallSignal Transistors, FETs and Diodes Device Data

BF199
10 VCE = 10 V 5 45 MHz mmhos 2 mmhos 1 0.5 10.7 MHz 470 kHz 100 MHz 200 100 50 VCE = 10 V f = 0.47 to 45 MHz

20 10 5

0.2 0.1

4 5 6 IC, COLLECTOR CURRENT (mA)

3 4 5 IC, COLLECTOR CURRENT (mA)

Figure 7. g11e (gie)

Figure 8. g21e (Yfe)

200 VCE = 10 V 100 50 mhos 45 MHz 10.7 MHz 20 10 5 470 kHz 100 MHz

3 4 5 IC, COLLECTOR CURRENT (mA)

Figure 9. g22e (goe)

Motorola SmallSignal Transistors, FETs and Diodes Device Data

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PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43

A R P
SEATING PLANE

L K D

X X G H V
1

C N N

SECTION XX

DIM A B C D F G H J K L N P R V

CASE 02904 (TO226AA) ISSUE AD

STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE

Motorola SmallSignal Transistors, FETs and Diodes Device Data

BF199

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Motorola SmallSignal Transistors, FETs and Diodes Device Data

*BF199/D*

BF199/D