UNIVERSITI PENDIDIKAN SULTAN IDRIS SEMESTER 1 SESI 2011/2012 SFE 3013: EXPERIMENT 3 EXPERIMENTS FOR DIODE CHARACTERISTICS NAME:

SHARIFAH MAIZURA KASMAWATI SYED HAMZAH MATRIC NUMBERS: D20091035071 NAME: NUR ADHA MD.AMIN MATRIC NUMBERS: D20091035114 LECTURERSS NAME: DR.BAKAR, DR.SYED ABDUL MALIK

Objective: 1. To understand the characteristics of each type of diode. 2. To recognize the specification of each type of diode. 3. To learn how to test the characteristics of each type of diode by using various instruments, and how to judge the accepted and defective diodes. Apparatus: 1. KL- 21001 Linear Circuit Lab 2. Experiment module: KL- 23001 3. Experiment instrument: Oscilloscope and Digital Multimeter 4. Tools: Basic hand tools 5. Materials: As indicated in the KL-23001

Procedures: (A) EXPERIMENT FOR SILICON DIODE Plotting the V-I characteristics curve of silicon diode (I) using Oscilloscope
1. First, the module KL-23001 in the KL-21001 Linear Circuit Lab fixed, and then the block

marked 23001- block a located.

2. The short-circuit jumper clip inserted by referring to Figure and the short circuit jumper

clip arrangement in Figure.

3. The 2.0 Vp-p, 1 kHz sine wave connected to the IN terminal. 4. Channel 2, CH2(Y) of the Oscilloscope used to test points TP1 and TP2. Then the

Channel 1, CH1(X) of Oscilloscope used to test points TP3 and TP2. TP1 will be used as

the vertical input and TP3 will be used as the horizontal input while TP2 is the common ground point.
5. The display method of the Oscilloscope changed by adjusting the TIME/DIV knob to

X-Y at the Horizontal menu (rotate anti-clockwise). Viewed it and the curve on the Oscilloscope recorded.
6. The VR2 (10 k) adjusted, and then v the change of the curve viewed.

Plotting the V-I characteristics curve of silicon diode (II) using Digital Multimeter
1. First the module KL-23001 in the KL-21001 Linear Circuit Lab fixed, and then the block

marked 23001- block a located.

2. The short-circuit jumper clip inserted by referring to Figure and the short-circuit jumper

clip arrangement in Figure. The Voltmeter and Ammeter connected.

3. The 12VDC then connected to the IN terminal, then the VR2 (10 k) adjusted to apply

voltage to 2 terminals of the diode as shown in Table (1) from 0.1V to 0.7V and the corresponding I f (forward current) viewed. The VR2 used to continuously adjust V f to view how I f will change then record in Table (1).
4. The short-circuit jumper clip inserted by referring to Figure and short-circuit clip

arrangement diagram in Figure (reverse connection). The Voltmeter and Ammeter then connected.
5. The 12VDC connected to the IN terminals then the VR2 (10 k) adjusted to apply

reverse voltage to 2 terminals of the diode as shown in Table (2) from 0V to 5V, and view the corresponding I R. Then it recorded in Table (2)
6. The values of Table (1) (2) plotted on the coordinate paper.

(B) EXPERIMENT FOR GERMANIUM DIODE Plotting the V-I characteristics curve of Germanium diode using Digital Multimeter

1. First, the module KL-23001 in the KL-21001 Linear Circuit Lab fixed, then the block

marked 23001- block a located.

2. The short-circuit clip jumper inserted by referring to Figure and the short-circuit clip

jumper arrangement diagram in Figure (forward connection). Then the Voltmeter and Ammeter connected.
3. The 12VDC connected to the IN terminal, then the VR2 (10 k) adjusted to apply

voltage to 2 terminals of the diode as shown in Table (3) from 0.1V to 0.7V and the corresponding I f (forward current) viewed. Then it recorded in Table (3).
4. The short-circuit jumper clip inserted by referring to Figure and short-circuit clip jumper

arrangement diagram in Figure (reverse connection). Then the Voltmeter and Ammeter connected.
5. The 12VDC connected to the IN terminals then the VR2 (10 k) connected to apply

reverse voltage to 2 terminals of the diode as shown in Table (4) from 0V to 5V, and the corresponding I R (without breakdown) viewed. Then it recorded in Table (4).
6. The values of Table (3) (4) plotted on the coordinate paper.

Plotting the V-I characteristics curve of Germanium diode using Oscilloscope

1. First, the module KL-23001 in the KL-21001 Linear Circuit Lab fixed, then the block

marked 23001- block a located.

2. The short-circuit jumper clip then inserted by referring to Figure and the short-circuit

jumper clip arrangement diagram in Figure.

3. The 2.0 Vp-p, 1 kHz sine wave then connected to the IN terminal. 4. Channel 2, CH2(Y) of the Oscilloscope used to test points TP1 and TP2. Next Channel 1,

CH1(X) of Oscilloscope used to test points TP3 and TP2. TP1 used as the vertical input and TP3 used as the horizontal input while TP2 is the common ground point.

5. The display method of the Oscilloscope changed by adjusting TIME/DIV knob to X-

Y at the Horizontal menu (rotate anti-clockwise). Viewed and recorded the curve on the Oscilloscope in Figure.
6. Then the VR2 (10 k) adjusted. The change of the curve viewed.

Results: The reading of silicon diode (II) using Digital Multimeter

V f Forward (V) I f Forward (mA)

0.1 0.0

0.2 0.0

0.3 0.0

0.4 0.04

0.5 0.33

0.6 1.42

0.7 4.35

Table 1 V R Reverse (V) I R Reverse (mA) 1.0 0.0 2.0 0.0 3.0 0.0 4.0 0.0 5.0 0.0

Table 2 The reading of Germanium diode using Digital Multimeter

V f Forward (V) I f Forward (mA)

0.1 0.02

0.2 0.18

0.3 0.70

0.4 1.44

0.5 2.56

0.6 3.31

0.7 4.58

Table 3

V R Reverse (V) I R Reverse (mA)

1.0 0.0

2.0 0.0

3.0 0.0

4.0 0.0

5.0 0.0

Table 4

Curve of silicon diode (I) using Oscilloscope

Curve of germanium diode (I) using Oscilloscope

Analysis data: For the graph of the silicon diode, a forward biased diode starts to conduct at the junction voltage about 0.6 V. A small increase in the forward voltage leads to a large increase in forward current. If the diode is forward-biased, the current flows. If the diode is reverse-biased, the current will not flow. A small increase in the forward voltage leads to a large increase in forward current. The breakdown voltage is the point at which a reverse voltage is conducted. Then for the graph of germanium diode, a forward biased diode starts to conduct at the junction voltage about 0.3V. When we compare the characteristics of silicon and germanium in the forward and reverse biased regions. The extremely high resistance in the reverse direction, open or nearly open, and the low resistance in the forward direction, less than 1K, proves that current under normal operating conditions will only flow in the forward bias direction. The value of voltage at which the barrier is overcome is called the knee voltage. The voltage necessary to cause breakdown of the diode was not possible to reach with the lab power supply and was not

practical due to probable damage to the diode. If the power supply was capable of causing breakdown, the diode would begin conducting heavily in the negative region until the diode burned up or disintegrated. The readings that were taken proved that current are restricted from flowing in the reverse bias region.

Conclusion: The forward and reverse bias graph of characteristics for silicon and germanium verified. If the diode is forward-biased, the current flows and when the diode is reverse-biased, the current will not flow. The voltage and current can be recorded for the forward biased diode by using the digital multimeter. The junction voltage is about 0.6 V for the forward bias for silicon then for germanium it is about 0.3V