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Peter Haaf, Senior Field Applications Engineer Jon Harper, Market Development Manager November 2006
www.fairchildsemi.com
Agenda
Basics Mathematical Estimations Comparison of the Estimations with real measurements Switching Losses vs. Voltage Switching Losses vs. Current EON Losses during Hard Switching with different Diode Technologies 7. Effect of parallel Caps on Switching Losses 8. Switching Losses vs. rise and fall time 9. Summary
1. 2. 3. 4. 5. 6.
x=0
x=0
P-type
N-type
P-type
N-type
Diode conducting
Diode blocking
IL 2 VDD 1
Switch
Step 2: Switch is turned off Current is circulating Step 3: Switch is turned on again, Diode is recovering and current continues rising
Reference GND
I V
t
E=(1/2)*V*I*t E=(1/3)*V*I*t E=(1/6)*V*I*t
IC dIC/dt
IRRM
Eon1
tA tB tF
Vout * I L * t R 2
with
dIF/dt IF VF
Eon1
IRRM tR
t = t0 IGBT turns on
t0
IC dIC/dt
IRRM
with
I RRM dI/dt = tA
dIF/dt IF VF
tR
t = t0 IGBT turns on
t0 t1 t2 t3 VRM
IC dIC/dt
IRRM
E on3
tA tB tF
I I = Vout * L + RRM * t B 3 2
tF = tB
dIF/dt IF VF
switching time:
tR+tA+tB
Diodeloss
Vout * I RRM * t B = 6
EON
Ic = 4 A
9.33E-01 uJ
Poff =
0.05 W
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Measured with di/dt=200A/us, see datasheets for full details Example: Loss in switch for 8A, di/dt=200A/us, VDD=390V Equations in Power Seminar 2007 documentation
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Calculated with di/dt=200A/us, see datasheets for full details Example: Loss in switch for 8A, di/dt=200A/us, VDD=390V Equations in Power Seminar 2007 documentation Linear approximation: of ta, tb, Irrm and Vf
Vds:100V/div
Idiode:2A/div
Vds:100V/div
Idiode:2A/div
20ns/div
Ta 26.2 26.2
PF 0.999 0.999
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Test circuits
Ids Vds
Ids Vds
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Switch on losses
td off: 90 % Vge => 90 % Ice tf: 90 % Ice => 10 % Ice td on: 10 % Vge = > 10 % Ice tr: 10 % Ice => 90 % Ice
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15
Comparison of two Stealth diodes, which are optimized for hard switching
Higher Current rating of the Diode will increase Eon, but decrease Eoff (Diode capacitance acts as a snubber). Eon is dominating!
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FQP9N50C
EON = f (Ice) and EOFF = f (Ice) for different diode technologies and ratings
Eon @FCP11N60F Eon @ FQPF5N50CF Eon @ RURD660 Eon @ RHRP860 Eon @ ISL9R460 Eoff @ ISL9R460
FQP9N50C
Current [A]
Technologies as well as rating will have a big impact on the Eon losses. Fast recovery FETs will lead to significant higher Eon losses compared to single diode technologies. => Sometimes the reason for external fast recovery diodes. 18
R e v e rs e R e c o v e ry C u rre n t [A ]
12
10
Irr @ FCP11N60F Irr @ FQPF5N50CF Irr @ RURD660 Irr @ RHRP860 Irr @ ISL9R460
FQP9N50C
0 0 1 2 3 4 5 6 7
Current [A]
Irr values are a good indicator for a loss comparison of diodes. Only Irrs measured at the same dI/dt are comparable!
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EON Losses at Hard Switching with different Diode Technology @ VIN = 300V @ I = 4A
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Variation of the EON Losses with input voltage for different diode technologies and ratings
Eon losses of the FET - FQP9N50C vs. Input Voltage
90 80 70
Eon @ MUR1560 Eon @ RURP860 Eon @ RURD660 Eon @ FFPF10UP60 Eon @ ISL9R1560 Eon @ RHRP860 Eon @ ISL9R860 Eon @ ISL9R460 Eon @ SIC 6A
350
Especially in hard switching applications the diode technology will have a significant impact on the Eon losses of the switch.
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FQP9N50C
Irr @ MUR1560 Irr @ RURD660 Irr @ FFPF10UP60 Irr @ ISL9R1560 Irr @ RHRP860 Irr @ ISL9R860 Irr @ ISL9R460 Irr @ SIC 6A
The Irr value is a good parameter to estimate the switching losses of different technologies. Only Irrs measured at the same dI/dt are comparable!
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FQP9N50C
The difference between low and high temperature reverse recovery behavior is not the same for all technologies. Be careful if you compare only at low temperatures.
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Switching Losses @ increasing switching speed - Same MOSFET, different Rg Diode = ISL9R460, U = 300V, I = 4A
Switching Losses @ increasing switching speed - Different MOSFET Technologies Diode = ISL9R460, U = 300V, I = 4A
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30
25
20
15
10
dI/dt [A/us]
EON = 32 uJ
EON = 39 uJ
EON = 57 uJ
Increase of the Eon losses due to the parallel Capacitance. Advantages in switching off Overall losses?
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E to t / E o n / E o ff lo s s e s [u J ]
80 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 800 900 1000
80 pF @ 300 V
200 pF @ 200 V
450 pF @ 100 V
As higher the voltage, as smaller the cap to decrease the overall losses. 30
Summary
Reverse recovery in diodes in half-bridge structures causes
small losses in the diodes larger losses in the MOSFET/IGBT
Higher di/dt results in lower EON losses, but also in a higher IRRM Addition of extra capacitance
increases EON losses but decreases EOFF losses addition of extra capacitance could reduce total losses.
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