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ESE319 Introduction to Microelectronics

CMOS Transmission Gates

2006 Philip V. Lopresti (update 07Nov07 KRL)

ESE319 Introduction to Microelectronics

Non-negligible Body Effect


NMOS Devices PMOS Devices

Body and source connected to most negative voltage, i.e. VSB = 0. Body effect is negligible.

Only body Body and connected source connected to most negative to most positive voltage i.e. VSB 0. voltage i.e. VSB = 0. Body effect is Body effect is non-negligible. negligible.

Only body connected to most positive voltage i.e. VSB 0. Body effect is non-negligible.
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2006 Philip V. Lopresti (update 07Nov07 KRL)

ESE319 Introduction to Microelectronics

Non-negligible Body Effect


When VSB 0 causes the electric field in the vicinity of the channel to change. (See S&S p 258.) The channel depth is decreased, increasing the threshold voltage:
V t =V t0 2 f V SB 2 f

Vt0 is the zero diode value of Vt, VSB is the back voltage across the diode and =GAMMA and 2 F =PHI are process dependent parameters.

2006 Philip V. Lopresti (update 07Nov07 KRL)

ESE319 Introduction to Microelectronics

Pass Transistor Logic


Transistors are used as switches: two in series form a 3 input AND gate, while two in parallel, with input A held HIGH form a 2 input OR gate.

Y = ABC

Y = A BC

Note: 1. Inputs B and C drive the gates of transistor switches. 2. The inputs can be either a variable or a constant HIGH or LOW quantity. 3. A low resistance to ground is required to obtain LOW output Y when required.
2006 Philip V. Lopresti (update 07Nov07 KRL)

ESE319 Introduction to Microelectronics

vI HIGH and nMOS Switch Closed


v G =V DD
vI vo

v I =V DD v O =0 @ t=0

Switch closed at t = 0: v G =V DD v S =v O =0 v D =v i =V DD v I v O
v DS =v GS =V DDv O v GS V tN

Source and drain terminals depend on relative values of vI and vO. Note that the source voltage is equal to the body voltage only when vI or vO is 0 V.
2006 Philip V. Lopresti (update 07Nov07 KRL)

nMOS in Sat. mode as C charges 2 1 i D = k n V DD v O V tN 2 v O V DD V tN v GS =V DD v O V tN nMOS in Cutoff when vO > VDD - VtN
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ESE319 Introduction to Microelectronics

vI HIGH and nMOS Switch Closed


v G=V DD
vI vo

v I =V DD v O=0 @ t=0

Two problems: 1. VtN increases with increases in source (capacitor) voltage. 2. nMOS stops conducting when:

v O V DD V tN
Hence, the HIGH vO < VDD! This lower VOH can pose noise-margin problems if CMOS stages follow.

2 1 i D = k n V DD v O V tN 2

V SB =v O 0 VtN is body-effect dependent:


V tN =V t0N N 2 fN V SB 2 f
2006 Philip V. Lopresti (update 07Nov07 KRL)

ESE319 Introduction to Microelectronics

vI LOW and nMOS Switch Closed


v G=V DD
vI vO

Hence, nMOS in Sat. initially:


2 1 i D = k n V DD V t0N 2 Capacitor C is discharging, so eventually, v DS =v ov GS V t0N

v I =0 V v O =V DD @ t=0

Switch closed at t = 0: v D =v O =V DD v S =v I =0 v G =V DD =v GS =V DD V tN
v DS =v O v I =v O =V DDv GS V tN
V SB =v I =0V V tN =V t0N
2006 Philip V. Lopresti (update 07Nov07 KRL)

And discharging continues with nMOS in Tri. 1. Since the vGS always exceeds Vt0N, C will fully discharge to vO = 0 V. 2. Since VSB = 0, there is no body effect!
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ESE319 Introduction to Microelectronics

vI HIGH CMOS Transmission Gate


Previous nMOS analysis holds (drain (D) on left).
D
vI

S
vo

pMOS device has source (S) on left and: V S =V DD =V B V tP=V t0P VSB = 0; hence there is no pMOS body effect! nMOS is ON 0V vO < VDD - VTN
v SG =V DD0V tP for 0V vO VDD

v I =V DD S v O=0 @ t=0

Capacitor C charges vO -> VDD

pMOS is ON 0V vO > VDD


2006 Philip V. Lopresti (update 07Nov07 KRL)

ESE319 Introduction to Microelectronics

vI LOW CMOS Transmission Gate


S
vI

D
vo

VSB = vO VDD =>there is a pMOS body effect and VtP Vt0P! VSB = vI = 0V =>there is no nMOS body effect and VtN = Vt0N! nMOS: v O =0 @ t =0 nMOS is ON 0V vO VDD

v I =0V
v O =V DD @ t=0

Capacitor C discharges vO -> 0 V

pMOS: V SG =v O0V tP forV tPvO V DD pMOS is ON |VtP| < vO > VDD


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2006 Philip V. Lopresti (update 07Nov07 KRL)

ESE319 Introduction to Microelectronics

CMOS Transmission Gate


vI = VDD
vI vO
vDSN > vGSN VtN vDSN > vGSN VtN vGSN < VtN vSDP > vSGP |VtP| vSDP < vSGP |VtP| vSDP < vSGP |VtP|

|VtP|

VtN
nMOS: LIN pMOS: SAT nMOS: SAT pMOS: SAT

vO

vI = 0 V
nMOS: LIN pMOS: OFF

vDSN < vGSN VtN vDSN < vGSN VtN vDSN > vGSN VtN vSGP < |VtP| vSDP > vSGP |VtP| vSDP > vSGP |VtP|

|VtP|
2006 Philip V. Lopresti (update 07Nov07 KRL)

VtN

vO
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ESE319 Introduction to Microelectronics

CMOS Transmission Gate ON-Resistance


vI = VDD
v O =0@ t=0
rDSN rDSP rDSN rDSP

rDSN rDSP
2006 Philip V. Lopresti (update 07Nov07 KRL)

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ESE319 Introduction to Microelectronics

RON-SW rDSP rDSN

vI = VDD
v O =0@ t=0

RTOT = rDSN || rDSP vo

2006 Philip V. Lopresti (update 07Nov07 KRL)

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