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NPN Triple Diffused Planar Silicon Transistor

2SC5388
High-Voltage Switching Applications
Features
High speed (Adoption of MBIT process). High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). On-chip damper diode.

Package Dimensions
unit:mm 2039D
[2SC5388]
3.4 16.0 5.6 3.1

5.0 8.0 21.0 22.0

20.4

2.8 2.0 1.0

4.0

2.0 0.6

Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Tc=25C

5.45

Conditions

3.5

5.45

2.0

1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML

Ratings 1500 700 5 5 10 1 3.0 50 150 55 to +150

Unit V V V A A A W W
C C

Electrical Characteristics at Ta = 25C

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=700V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=5A 100 50 Conditions Ratings min typ max 0.1 600 230 150 Unit mA mA

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-1738 No.62831/4

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2SC5388
Continued from preceding page.
Parameter Collector-to-Emitter Sustain Voltage Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Diode Forward Voltage Fall Time Storage Time Symbol VCEO(sus) IC=100mA, IB=0 VCE(sat) IC=5A, IB=0.5A VBE(sat) IC=5A, IB=0.5A V(BR)CBO IC=1mA, IE=0 VF tf tstg IEC=5A IC=5A, IB1=0.5A, IB2=2.5A, VCC=200V, RL=40 IC=5A, IB1=0.5A, IB2=2.5A, VCC=200V, RL=40 Conditions Ratings min 700 1.5 2.0 1500 2.0 0.8 3 typ max Unit V V V V V s s

Switching Time Test Circuit

PW=20s D.C.1% INPUT RB VR 50 R1 + 100F VBE=--5V R2 + 470F VCC=200V RL IB1 IB2 T.U.T OUTPUT

5.0 4.5

IC -- VCE
90mA 80mA 70mA 60mA 50mA

10

IC -- VBE
VCE=5V

A 40m A 30m

Collector Current, IC A

100mA

3.5 3.0 2.5 2.0 1.5 1.0 0.5 0

Collector Current, IC A

4.0

20m

8 7 6 5 4 3

10mA

0C

C 25
1.4

Ta= 12

IB=0 5mA
0 1 2 3 4 5 6 7 8 9 10

1 0 0 0.2 0.4 0.6 0.8

1.0

1.2

--40
1.6 1.8

2.0

2.2

2.4

Collector-to-Emitter Voltage, VCE V

1000 7 5 3 2

IT00791 10

Base-to-Emitter Voltage, VBE V

IT00792

hFE -- IC
VCE=5V

VCE(sat) -- IC
IC / IB=20

Collector-to-Emitter Saturation Voltage, VCE (sat) V

5 3 2

DC Current Gain, hFE

100 7 5 3 2 10 7 5 3 2 1.0 0.1

C 120 Ta= C 25 0C --4

25C
1.0 7 5 3 2 0.1 0.1

Ta=--40C
120C

1.0

Collector Current, IC A

10 IT00793

1.0

Collector Current, IC A

7 10 IT00794

No.62832/4

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2SC5388
10 7

SW Time -- IC
Switching Time, SW Time s IC / IB1=10 IB2 / IB1=5 R load tstg

10 7 5 3 2

SW Time -- IB2
IC=5A IB1=0.5A R load tstg

Switching Time, SW Time s

5 3 2

1.0 7 5 3 2

1.0 7 5

tf
3 2

tf

0.1 0.1

1.0

Collector Current, IC A
5 3 2

10 IT00795

0.1 --0.1

Base Current, IB2 A

--1.0

7 --10 IT00796

F.B A S O
ICP IC
P C =5 0W
10

5 3 2

R.B A S O
ICP L=500H IB2=--2A Tc=25C Single pulse

Collector Current, IC A

3 2 1.0 7 5 3 2 0.1 7 5 3 2 2

1m

P T= 10 0 30 s 0 s
s

Collector Current, IC A

10 7 5

10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2

D C op

m s

er at n io

Tc=25C Single pulse

3 5 7 10 2 3 5 7 100 2 3 5

Collector-to-Emitter Voltage, VCE V

4.0 3.5

7 1000 IT00797

100

7 1000

Collector-to-Emitter Voltage, VCE V

70

IT00798

PC -- Ta

PC -- Tc

60

Collector Dissipation, PC W

3.0 2.5 2.0 1.5 1.0 0.5 0 0 20

Collector Dissipation, PC W

50

No

40

he

at

sin

30

20

10 0

Ambient Temperature, Ta C

40

60

80

100

120

140

160

20

40

IT00799

Case Temperature, Tc C

60

80

100

120

140

160

IT00800

No.62833/4

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2SC5388

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice.
PS No.62884/4