Вы находитесь на странице: 1из 65

Chapter 1 INTRODUCTION TO POWER ELECTRONICS SYSTEMS

Definition and concepts Application Power semiconductor switches Gate/base drivers Losses Heat sinks Snubbers Safe operating area (SOA)

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

Definition of Power Electronics


DEFINITION: To convert, i.e to process and control the flow of electric power by supplying voltages and currents in a form that is optimally suited for user loads. Basic block diagram
* power electronic POWER INPUT POWER OUTPUT * Power converter

vi , ii
Source

vo , i o
Load

Processor
Control signal

Controller
Building Blocks:

measurement reference

Input Power (Source), Output Power (Load) Power Processor Controller


15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 2

Power Electronics (PE) Systems


To convert electrical energy from one form to another, i.e. from the source to load with: highest efficiency, highest availability highest reliability lowest cost, smallest size least weight. Static applications involves non-rotating or moving mechanical components. Examples:
DC Power supply, Un-interruptible power supply, Power generation and transmission (HVDC), Electroplating, Electronic Welding, Heating, Lighting, Cooling, Electronic ballast, PV and Fuel Cell Conversion, VAR and Harmonic Compensation

Drive applications intimately contains moving or rotating components such as motors. Examples:
Electric trains, Electric vehicles, Airconditioning System, Pumps, Compressor, Conveyer Belt (Factory automation).
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 3

PE - Scope and Applications

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

Application examples
Static Application: DC Power Supply

AC voltage

DIODE RECTIFIER

FILTER

DC-DC CONVERTER

LOAD

AC LINE VOLTAGE (1 or 3 )

Vcontrol (derived from feedback circuit)

Drive Application: Air-Conditioning System


Power Source Power Electronics Converter
Desired temperature Desired humidity

Variable speed drive Motor Air conditioner

Temperature and humidity

Building Cooling

System Controller

Indoor temperature and humidity

Indoor sensors

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

WHY POWER ELECTRONIC IS SO IMPORTANT TODAY?


Electrical power conversion and control at high frequency Apparatus at low cost, small size, high reliability and long life Very important element in modern electrical power processing and industrial process control Fast growth in global energy consumption Environmental and safety problems by fossil and nuclear power plants Increasing emphasis of energy saving and pollution control by PE Growth of environmentally clean sources of power that are PE intensive (Wind, PV and Fuel Cell)

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

PE vs. Linear Electronic e.g. DC Power Supply

Simple system Series transistor works as an adjustable resistor Low Efficiency (high losses) can drop up to 40% Suitable for low power Heavy and bulky (transformer & magnetic components)
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 7

PE vs. Linear Electronics e.g. DC Power Supply

Transistor works as a switch (ON, OFF) High Efficiency ( > 90 %) High-Frequency transformer Multi-output voltage application Low cost, small size , light weight
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 8

Power Conversion concept: example


Supply from TNB: 50Hz, 240V RMS (340V peak). Customer need DC voltage for welding purpose, say. TNB sine-wave supply gives zero DC component! We can use simple half-wave rectifier. A fixed DC voltage is now obtained. This is a simple PE system.
+ Vs _ Vs (Volt)

340 V
time

Simple power processor

+ Vo _

Vo

Average output voltage : Vm Vo =

Vdc
time

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

Conversion Concept
How if customer wants variable DC voltage? More complex circuit using SCR is required.
vs

ig ia

G K
+ vo _ vo

A
+ vs _

2
ig

Average output voltage :

Vm 1 Vo = Vm sin (t )dt = 2 [1 + cos ] 2


By controlling the firing angle, ,the output DC voltage (after conversion) can be varied.. Obviously this needs a complicated electronic system to set the firing current pulses for the SCR.
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 10

Power Electronics Converters


1. AC to DC: RECTIFIER

AC input

DC output

2. DC to DC: CHOPPER

DC input

DC output

3. DC to AC: INVERTER

DC input

AC output

4. AC to AC: CYCLOCONVERSION
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 11

Current Issues
1.

Energy scenario Need to reduce dependence on fossil fuel


coal, natural gas, oil, and nuclear power resource Depletion of these sources is expected.

Tap renewable energy resources:


solar, wind, fuel-cell, ocean-wave

Energy saving by PE applications.


Examples: Fact: 65% generated energy consumed by electrical drives mainly by pumps and fans; and 20% used by lighting Variable speed compressor air-conditioning system controlled by PE more efficient: 30% savings compared to thermostat-controlled system. Lighting using electronics ballast (high freq. lamp) boost efficiency of fluorescent lamp by 20%.

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

12

2. Environment issues Nuclear safety. Nuclear plants remain radioactive for thousands of years. Burning of fossil fuel Emits gases such as CO2, CO (oil burning), SO2, NOX (coal burning) etc. Creates global warming (green house effect), acid rain and urban pollution from smokes. Possible solutions by application of PE. Examples: Renewable energy resources. Centralization of power stations to remote non-urban area. (mitigation). Electric vehicles.
SEE 4433/5433 Dr. Awang /Dr. Zainal 13

15/01/2009

PE Application - BIPV

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

14

PE Application-Electric vehicles

World fastest electric car

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

15

PE wind & tidal wave energy

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

16

PE Home Appliances

Inverter microwave

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

17

PE growth
PE rapid growth due to: Technology advancement in power (semiconductor) switches Advances in microelectronics (DSP, VLSI, microprocessor/microcontroller, ASIC) New ideas in control algorithms Demand for new PE applications with smaller size and lighter weight, new VSD motors PE is an interdisciplinary field: Digital/analogue electronics Power and energy Microelectronics Control system Computer, simulation and software Solid-state physics and devices Packaging Heat transfer
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 18

Interdisciplinary Nature of Power Electronics


Application of electronic semiconductor devices and circuits in the conversion and control of electrical power.

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

19

Power semiconductor devices (Power switches)


Power switches: work-horses of PE systems.
POWER SWITCH

Operates in two states: Fully on. i.e. switch closed. Conducting state Fully off , i.e. switch opened. Blocking state Power switch never operates in linear mode.

I Vswitch 0 = Vin

SWITCH ON (fully closed)


I=0 Vswitch= Vin Vin

SWITCH OFF (fully opened)

Can be categorised into three groups: Uncontrolled: Diode : Semi-controlled: Thyristor (SCR). Fully controlled: Power transistors: e.g. BJT, MOSFET, IGBT, GTO, IGCT
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 20

Photos of Power Switches (From Powerex Inc.)


Power Diodes Stud type Hockey-puck type

IGBT Module type: Full bridge and three phase

IGCT Integrated with its driver


15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 21

Photo of Power Switches

SITH

THYRISTORS (SCR)

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

22

Power Diode
A (Anode)

Id

+ Vd _

K (Cathode)

Diode: Symbol

v-i characteristics

When diode is forward biased, it conducts current with a small forward voltage (Vf) across it (0.2-3V) When reversed (or blocking state), a negligibly small leakage current (uA to mA) flows until the reverse breakdown occurs. Diode should not be operated at reverse voltage greater than Vr

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

23

Reverse Recovery
IF trr= ( t2 - t0 )
dif/dt

t2 t0 VR IRM VRM

When a diode is switched quickly from forward to reverse bias, it continues to conduct due to the minority carriers which remains in the p-n junction. The minority carriers require finite time, i.e, trr (reverse recovery time) to recombine with opposite charge and neutralise. Effects of reverse recovery are increase in switching losses, increase in voltage rating, over-voltage (spikes) in inductive loads

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

24

Softness factor, Sr
Snap-off

IF

Sr= ( t2 - t1 )/(t1 - t0) = 0.3

t0 t1
Soft-recovery

VR t2

IF

Sr= ( t2 - t1 )/(t1 - t0) = 0.8 t1 t0 VR t2

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

25

Types of Power Diodes


Line frequency (general purpose): On state voltage: very low (below 1V) Large trr (about 25us) (very slow response) Very high current ratings (up to 5kA) Very high voltage ratings(5kV) Used in line-frequency (50/60Hz) applications such as rectifiers Fast recovery Very low trr (<1us). Power levels at several hundred volts and several hundred amps Normally used in high frequency circuits Schottky Very low forward voltage drop (typical 0.3V) Limited blocking voltage (50-100V) Used in low voltage, high current application such as switched mode power supplies.

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

26

THYRISTOR
J1 J2 J3

SCR was invented 1956 Bell Telephone Lab, then it was commercialized by GEC 1957 It has a 4-layer p.n.p.n structure with 3 terminals ( anode, cathode, gate) Anode and cathode connected to main power circuit. Gate terminal connected to low level gate current Operation- VAK positive, J1 & J3 forward biased, but J2 reverse biased- no conduction (off-state) until VAK> VBO Applied gate voltage Vg to gate- lowered the level of J2 reversed biased, so thyristor will turn-on (conducting) . Current flows in forward direction.
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 27

Thyristor (SCR)
A (Anode) Ia + Vak _
Reversed break over voltage

Ia
Forward break over voltage

Ig G (Gate)

Vr

Ih IL Ibo

Ig>0

Ig=0

K (Cathode)

Vbo

Vak

Thyristor: Symbol

v-i characteristics

If the forward break over voltage (Vbo) is exceeded, the SCR self-triggers into the conducting state. The presence of gate current will reduce Vbo. Normal conditions for thyristors to turn on:
the device is in forward blocking state (i.e Vak is positive) a positive gate current (Ig) is applied at the gate

Once conducting, the anode current is latched. Vak collapses to normal forward volt-drop, typically 1.5-3V. (temperature dependant) In reverse -biased mode, the SCR behaves like a diode. Voltage blocking is bi-directional.
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 28

Thyristor Conduction
ig ia + vs _
vs

+ vo _

vo

ig

Thyristor cannot be turned off by applying negative gate current. It can only be turned off if Ia goes negative (reverse) This happens when negative portion of the of sine-wave occurs (natural/line commutation), Another method of turning off is known as forced commutation, ( i.e when supply is DC, e.g. Inverter ) The anode current is diverted to another circuitry. Auxiliary energy in capacitor used to force anode current to zero.
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 29

Types of thyristors
Phase controlled rectifying line frequency voltage and current for ac and dc motor drives large voltage (up to 7 kV) and current (up to 4 kA) capability low on-state voltage drop (1.5 to 3V) Inverter grade used in inverter and chopper Quite fast. Can be turned-on using forcecommutation method. Light-activated Similar to phase controlled, but triggered by pulse of light guided by optical fibre. Normally very high power ratings (HVDC) TRIAC Dual polarity thyristors ( 2 SCRs integrated in inverse-parallel ) Frequently used in many low-power applications such as juice maker, blenders and vacuum cleaners

Give other factors that can turn-on SCR !!!


15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 30

Controllable switches (power transistors)


Can be turned ONand OFF by relatively very small control signals. Operated in SATURATION and CUT-OFF modes only. No linear region operation is allowed due to excessive power loss. In general, power transistors do not operate in latched mode. Traditional devices: Bipolar junction transistors (BJT), Metal oxide silicon field effect transistor ( MOSFET), Insulated gate bipolar transistors (IGBT), Gate turn-off thyristors (GTO) Emerging (new) devices: Gate controlled thyristors (GCT). Or MCT (MOSFET controlled Thyristor)

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

31

Bipolar Junction Transistor (BJT)


C (collector) IC B (base) + VCE _ IC IB

IB

E (emitter)

VCE (sat)

VCE

BJT: symbol (npn)

v-i characteristics

BJT invented in 1948, by 1960 substantial power handling capability Current Control Device (base current, Ib control Ic). It has 3-layer p.n.p or n.p.n structure with 2 junctions. Ratings: Voltage: VCE<1000, Current: IC<400A. Switching frequency up to 5kHz. Low on-state voltage: VCE(sat) : 2-3V Low current gain (<10). Need high base current to obtain reasonable IC . (Increase current gain by Darlington Pairs 100s) Expensive and complex base drive circuit. Hence not popular in new products. SOA- second breakdownrequires snubber )
SEE 4433/5433 Dr. Awang /Dr. Zainal 32

15/01/2009

BJT Darlington pair


C (collector) Driver Transistor B (base) IC1 IC Output Transistor IC2

1
IB1 IB2

+ VCE _

ic= ib

Biasing/ stabilising network

E (emitter)

Normally used when higher current gain is required Triple Darlington can be selected for more current gain, but with higher Vce drop and slow switching speed

= I c I B1 = (I c1 + I c 2 ) I B1 =

I c1 I B1

Ic2 I B1

Ic2 I B2 I B1 + I c1 = 1 + I I = 1 + 2 I B 2 B1 B1 = 1 + 2 (1 + 1 ) = 1 + 2 + 1 2
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 33

Metal Oxide Silicon Field Effect Transistor (MOSFET)


D (drain) ID G (gate) + VGS _ S (source) VDS + VDS _ + VGS _ ID

MOSFET: symbol (n-channel)

v-i characteristics

Available in 1970 Three terminal device (GSD). Voltage control device ( Vgs control ID). No reverse voltage capability. Ratings: Voltage VDS < 500V, current IDS < 300A. Frequency f > 100KHz. For some low power devices (few hundred watts) may go up to MHz range. Turning on and off is very simple. To turn on: VGS = +15V To turn off: VGS = 0 V and 0 V to turn off. Gate drive circuit is simple
SEE 4433/5433 Dr. Awang /Dr. Zainal 34

15/01/2009

MOSFET characteristics
Basically low voltage device. High voltage device are available up to 600V but with limited current. Can be paralleled quite easily for higher current capability. Has positive temperature coefficient, results in nonexistence of second breakdown. (avoiding the creation of hot spot) Has high input impedance, so easily connected to CMOS or TTL logic. Internal (dynamic) resistance between drain and source during on state, RDS(ON), , limits the power handling capability of MOSFET. High losses especially for high voltage device due to RDS(ON) . Dominant in high frequency (>100kHz) and low power application . Biggest application is in switched-mode power supplies. CoolMOS ? (Rdson half of the NORMAL MOSFET for the same V & I rating - higher efficiency)

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

35

Insulated Gate Bipolar Transistor (IGBT)


C (collector) IC G (gate) + VGE _ + VCE _ IC

VGE

E (emitter)

VCE (sat)

VCE

IGBT: symbol

v-i characteristics

Developed 1980,widely available 1990s Combination of BJT and MOSFET characteristics.


Gate behaviour similar to MOSFET - easy to turn on and off. Low losses like BJT due to low on-state CollectorEmitter voltage (2-3 V).

Ratings: Voltage: VCE < 3.3 kV, Current,: IC < 1.2kA currently available. Latest: HVIGBT 4.5kV/1.2kA. Switching frequency up to 100 kHz. Typical applications: 20-50 kHz.
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 36

Gate turn-off thyristor (GTO)


Ia A (Anode) Ia + Vak _ G (Gate) Ig K (Cathode) Vbo Ig>0 Vr Ih Ibo Ig=0

Vak

GTO: Symbol

v-i characteristics

Behave like normal thyristor, but can be turned off using gate signal (applied negative voltage across VGK) However turning off is difficult. Need very large reverse gate current (normally 1/5 of anode current) and longer off time (tail current). E.g. a 2500V, 1000A GTO requires a peak negative gate current of 250 A. Gate drive design is very difficult due to very large reverse gate current at turn off. Ratings: Highest power ratings switch: Voltage: Vak<5 kV; Current: Ia<5 kA. Frequency<2kHz. Very stiff competition: Low end-from IGBT. High end from IGCT
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 37

Insulated Gate-Commutated Thyristor (IGCT)


A (Anode) Ia + Vak _ Ig K (Cathode)

IGCT

IGCT: Symbol Among the latest Power Switches. Conducts like normal thyristor (latching), but can be turned off using gate signal, similar to IGBT turn off; VGT of 20V is sufficient (fast rising turn-off pulse with very short duration) The gate drive requirement decrease by a factor of 5 compared to GTO. Power switch is integrated with the gate-drive unit. Ratings: Voltage: Vak< 6.5 kV; Current: Ia< 4 kA. Frequency<1KHz. Currently 10kV device is being developed. Very low on state voltage: 2.7 V for 4 kA device

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

38

MOS-CONTROLLED THYRISTOR (MCT)


pnp M1 M2 npn

a) Equivalent cct

b) symbol

New recently commercially available (Harris SemiCon.) Basically a Thyristor with two MOSFETs built into the gate structure (ON-FET turns ON MCT and OFF-FET turns OFF MCT) Turn on MCT by turning on M1 - Apply positive gate-cathode voltage Turn off MCT by turning on M2 - Apply negative gate-anode voltage Low on-state losses with high current capability

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

39

Switches idealized characteristic

DIODE

SCR

BJT

MOSFET

IGBT

GTO
15/01/2009

MCT
SEE 4433/5433 Dr. Awang /Dr. Zainal 40

Power Switches: Power Ratings

1GW

Thyristor
10MW

10MW 1MW 100kW 10kW 1kW 100W 10Hz 1kHz

GTO/IGCT

IGBT

MOSFET

100kHz 1MHz

10MHz

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

41

Power Switches: Device capabilities

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

42

(Base/gate) Driver circuit

Control Circuit

Driver Circuit

Power switch

Interface between control (low power electronics) and (high power) switch. Functions: Amplification: amplifies control signal to a level required to drive power switch Isolation: provides electrical isolation between power switch and logic level Minimise switching losses ( by fast switching transition) Complexity of driver varies markedly among switches. MOSFET/IGBT drivers are simple GTO and BJT drivers are very complicated and expensive.
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 43

Amplification: Example: Simple MOSFET gate driver


From control circuit +VGG R1 Rg Q1 LM311
(Comparator)

+ G + VGS _ D VDC S _

B1

Note: MOSFET requires VGS = +15V for turn on and 0 V to turn off. LM311 is a simple op-amp with open collector output Q1. When B1 is high, Q1 conducts. VGS is pulled to ground. MOSFET is off. When B1 is low, Q1 will be off. VGS is pulled to VGG. If VGG is set to +15V, the MOSFET turns on. Effectively, the power to turn-on the MOSFET comes from external power supply, VGG (inject (sourcing) enough current to charge MOSFET capacitor Cgs)

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

44

Isolation
R1 ig
+

vak
-

Pulse source
R2 iak

Isolation using Pulse Transformer

LED Photo-transistor

From control circuit

D1

Q1

A1

To driver

Isolation using opto-coupler (optically isolated control)

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

45

Driver Circuit

Some gate drive circuit for IGBTs

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

46

Opto-Coupler Isolated MOSFET Drives


Signal from control electronics Opto-coupler V GG+ D f B+ CGG+ R T BC GGV GGQsw G V d Io

AC power in

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

47

Switches comparisons (2003)

Thy
Availabilty State of Tech. Voltage ratings Current ratings Switch Freq. On-state Voltage Drive Circuit Comm-ents

BJT Late 70s Mature

FET Early 80s Mature/ improve 500V 200A 1MHz I* Rds (on) Very simple
Good performan ce in high freq.

GTO Mid 80s Mature

IGBT Late 80s Rapid improve 3.3kV 1.2kA 100kHz 2-3V Very simple
Best overall performanc e.

IGCT Mid 90s Rapid improvem ent 6.5kV 4kA 1kHz 3V Simple
Replacing GTO

Early 60s Mature

5kV 4kA na 2V Simple


Cannot turn off using gate signals

1kV 400A 5kHz 1-2V Difficult


Phasing out in new product

5kV 5kA 2kHz 2-3V Very difficult


King in very high power

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

48

Device Applications

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

49

Application examples
For each of the following application, choose the best power switches and reason out why. An inverter for the light-rail train (LRT) locomotive operating from a DC supply of 750 V. The locomotive is rated at 150 kW. The induction motor is to run from standstill up to 200 Hz, with power switches frequencies up to 10 kHz. A switch-mode power supply (SMPS) for remote telecommunication equipment is to be developed. The input voltage is obtained from a photovoltaic array that produces a maximum output voltage of 100 V and a minimum current of 200 A. The switching frequency should be higher than 100 kHz. A HVDC transmission system transmitting power of 300 MW from one ac system to another ac system both operating at 50 Hz, and the DC link voltage operating at 2.0 kV.

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

50

Power switch losses


Why it is important to consider losses of power switches? to ensure that the system operates reliably under prescribed ambient conditions so that heat removal mechanism (e.g. heat sink, radiators, coolant) can be specified. Losses in switches affects the system efficiency Heat sinks and other heat removal systems are costly and bulky. Can be substantial cost of the total system. If a power switch is not cooled to its specified junction temperature, the full power capability of the switch cannot be realised. Derating of the power switch ratings may be necessary. Main losses: forward conduction losses, blocking state losses switching losses Gate drive losses
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 51

Heat Removal Mechanism

Fin-type Heat Sink

SCR (hokey-pucktype) on power pak kits

SCR (stud-type) on air-cooled kits


15/01/2009

Assembly of power converters


SEE 4433/5433 Dr. Awang /Dr. Zainal 52

Forward conduction loss


Ion +Von Ion +Von

Ideal switch

Real switch

Ideal switch: Zero voltage drop across it during turn-on (Von). Although the forward current ( Ion ) may be large, the losses on the switch is zero. Real switch: Exhibits forward conduction voltage (between 1-3 V, depending on type of switch) during turn on. Losses (on state) is measured by product of volt-drop across the device Von with the current, Ion, averaged over the period.
Mosfet: I2.Rdson.D BJT: ic.Vce(sat).D+ib.Vbe(sat)

Major loss at low frequency and DC

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

53

Blocking state loss


During turn-off, the switch blocks large voltage. Ideally no current should flow through the switch. But for real switch a small amount of leakage current may flow. This creates turn-off or blocking state losses The leakage current during turn-off is normally very small, Hence the turn-off losses are usually neglected.

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

54

Switching loss
v i v
P=vi

i
Energy

time

time

Ideal switching profile (turn on)


Ideal switch:

Real switching profile (turn-on)

During turn-on and turn off, ideal switch requires zero transition time. Voltage and current are switched instantaneously. Power loss due to switching is zero

Real switch:
During switching transition, the voltage requires time to fall and the current requires time to rise. The switching losses is the product of device voltage

and current during transition. For inductive load, the switch loss can be given as

PL = 0.5VsIL(tr+tf)fs
where fs is switching frequency ,IL = load current, tf & tr = rise and fall time of load current

Major loss at high frequency operation


SEE 4433/5433 Dr. Awang /Dr. Zainal 55

15/01/2009

Switching Characteristics (linearised)

Switching power loss is proportional to: switching frequency turn-on and turn-off times
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 56

An example of heat sink design


Say that a MOSFET is mounted on heat sink. So what is the correct heat sink size (ie Rhs-a)?

Let say Tj=100oC, Ta = 25oC, and total power loss is PT = PD PT = T/Rth =(Tj-Ta)/Rth Where Rth = total thermal resistance, = Rj-c+Rchs+Rhs-a Tj= Junction Temp,. Ta = ambient temp. Rj-c and Rc-hs are given in the device(M) datasheet, then the Rhs-a can be calculated
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 57

An example of heat sink design


Say that two diodes are mounted on the same heat sink. So what is the correct heat sink size (ie Rhs-a)?
Tj D1 Tc Ta Tins D2 Ths

Let say Tj=100oC, Ta = 25oC, and total power loss is PT = PD1 + PD2 PT = T/Rth =(Tj-Ta)/Rth Where Rth = total thermal resistance, Tj= Junction Temp,. PD = diode power loss

(Rj c + Rc hs) Rth = + Rhs a 2(Rj c + Rc hs)


2

Rj-c and Rc-hs are given in the device datasheet, then the Rhs-a can be calculated
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 58

Snubbers
+VL Ls i + Vin + Vce Vce

Vce rated time

Simple switch at turn off

PCB construction, wire loops creates stray inductance, Ls. Using KVL,

di vin = vs + vce = Ls + vce dt di vce = vin Ls dt since di dt is negative (turning off) di vce = vin + Ls dt
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 59

RCD Snubbers
The voltage across the switch is bigger than the supply (for a short moment). This is spike. The spike may exceed the switch rated blocking voltage and causes damage due to over-voltage. A snubber is put across the switch. An example of a snubber is an RCD circuit shown below turn-off snubber Snubber circuit smoothened the transition and make the switch voltage rise more slowly. In effect it dampens the high voltage spike to a safe value. Or an electrical circuit used to suppress ("snub") electrical transients. Vce Ls
D R+

Vce

Vce rated

time
15/01/2009 SEE 4433/5433 Dr. Awang /Dr. Zainal 60

Snubbers
In general, snubbers are used for: turn-on: to minimize large over currents through the device at turn-on (reduce dI/dt ) turn-off: to minimize large over voltages across the device during turn-off ( reduce dV/dt). Stress reduction: to shape the device switching waveform such that the voltage and current associated with the device are not high simultaneously. Switches and diodes requires snubbers. However, new generation of IGBT, MOSFET and IGCT do not require it.

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

61

Snubber Circuit
e.g. Turn-off RCD snubber dV/dt

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

62

Safe Operating Area(SOA) - BJT


SOA is defined as the voltage, current and power (temperature) conditions over which the device can be expected to operate without self-damage.
log( i C) Current limit I CM

switching trajectory of diodeclamped inductive load circuit

Pulses (nonshaded)
10 -5 sec

Pmax = Vce x Ic
T j,max

Power limit

10

-4 sec

DC (shaded)

2nd 2nd breakdown breakdown 2 Second Breakdown limit

10

-3 sec

dc

Voltage limit
log ( v ) BV CEO CE

Second Breakdown when high voltage and high current occurs simultaneously during turn-off, a hot spot is formed & device failed by thermal runaway

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

63

Safe Operating Area(SOA) MOSFET


log ( i ) D

Current limit
I DM

pulses
-5 sec

10

10 -4 sec T j,max

Power limit

10

-3 sec

DC
BV DSS

DC

Voltage limit

log (

v)

DS

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

64

Ideal vs. Practical power switch


Ideal switch
Block arbitrarily large forward and reverse voltage with zero current flow when off Conduct arbitrarily large currents with zero voltage drop when on Switch from on to off or vice versa instantaneously when triggered Very small power required from control source to trigger the switch

Practical switch
Finite blocking voltage with small current flow during turn-off

Finite current flow and appreciable voltage drop during turn-on (e.g. 2-3V for IGBT) Requires finite time to reach maximum voltage and current. Requires time to turn on and off. In general voltage driven devices (IGBT, MOSFET) requires small power for triggering. GTO requires substantial amount of current to turn off.

15/01/2009

SEE 4433/5433 Dr. Awang /Dr. Zainal

65

Вам также может понравиться