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Proc. of the International Conf. on Electrical, Electronics, Communication, and Information (CECI2001) Jakarta-Indonesia, March 7th-8th, 2001

GROWTH OF POLYCRYSTAL SILICON THIN FILM BY HOT WIRE-PECVD SYSTEM FOR TFT DEVICES
Syamsu, Darsikin ,Iqbal, Jusman*, Jasruddin D.M**, Mariati S, T. Winata, Sukirno and M. Barmawi***
Physics Departement ,Untad , Palu Physics Departement ,UNM , Makassar *** Laboratory Of Electronic Material Physics , ITB
** *

ABSTRACT Polycrystalline silicon thin films were grown on silicon wafer substrate by using hot wire plasma enhanced chemical vapor deposition (HW-PECVD) system. 10% of silane (SiH4) gas diluted in hydrogen were used as gas sources. The effect of substrate temperature on their deposition rate, layer structures and electrical properties were analyzed trough the layer thickness, crystal structure and dark conductivity. The deposition rate varies from 8.95 A/s to 14.57 A/s for substrates temperature from 175oC to 275 oC at gas flow rates of 70 sccm and filament temperatures of 1000 oC. The results from XRD characterization of the film grown at substrate temperature of 275 oC shows the presence of polycrystalline silicon structure which is marked by spectrum peaks of 2 at 28.94o, 47,68o, and 56,39o. The dark conductivity of the polycrystalline silicon thin films (3.61 x 10-4 S/cm) grown at substrate temperature of 250oC was higher than grown with the normal PECVD (10-9 S/cm). This result suggest that the polycrystalline silicon thin films grown by hot wire PECVD system is applicable for TFT devices. Key Words : Dark Conductivity, Deposition Rate, Hot Wire PECVD, Polycrystalline Silicon INTRODUCTION The growth of polysilicon thin films with high deposition rate and high filament temperatures has been realized using the HWCVD[1] and hot wire cell CVD[2] systems. The VHF-PECVD system has been used to grow a polyscrystalline silicon thin films with the substrate temperature range from 160oC to 200oC and

deposition pressure range from 250 to 350 mTorr[3] in the laboratory of electronic material Physics, ITB. However, this system is more complicate at high frequency. The normal PECVD were developed and modified by added a hot filament . The advantage of this new model is that the filament temperature is used to grow become lower than the normal one as used by P.Broguera,et. al [4]. In this study, the polycrystalline silicon thin films were grown on silicon wafer substrates by HWPECVD system at filament temperature of 1000oC. 10 % Silane gas diluted in hydrogen were used as gas sources. The deposition rate, dark conductivity and layer structure of polycrystall silicon thin films as a function of substrate temperature were analyzed and can be applicable for the TFT devices. EXPERIMENT Polycrystalline silicon thin films in this study were grown on silicon wafer by hot wire PECVD system in the laboratory of electronic material Physics, Department of Physics, FMIPA, ITB.. The components of this system include a chamber stainless steel (SS) with a diameter of 8 inch and hot plate. A tungsten wire with a diameter of 1.5 mm and 8 mm length was placed between electrodes at shutter. The filament temperature were measured by pyrometer infrared. The dark conduktivity was measured by two points (complainer) method using Keithley 617. Layer structure was measured by XRD characterization and the layer thickness was measured by Dektak-IIA.

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ISBN : 979-8575-02-4

Proc. of the International Conf. on Electrical, Electronics, Communication, and Information (CECI2001) Jakarta-Indonesia, March 7th-8th, 2001

RESULT and DISCUSSION Figure 1 shows the deposition rates of the polycrystalline silicon thin films as a function of substrate temperature at filament temperature of 10000C. From this figure, it can be seen that the deposition rates thin films varies from 8.95 A/s to 14.57 A/s at substrate temperature varies from 175oC to 2750C. Compared with the deposition rate of normal PECVD system at substrate temperature of 2000 C ( 0.23 A/s) [5] , the deposition rates of the thin film grown by Hot- Wire PECVD system is higher. Figure 2 indicates theXRD result of the silicon wafer (a) and the thin film grown at substrate temperature of 2750 C and filament temperature of 10000 C. From this figure indicates the present of the polycristall silicon structure marked by spectrum peaks of 2 = 28.94 0 , 47.68 0 , and 56.39 0 with the crystall orientation of <111>, <220>, and <311>. The result from SEM characterization at substrate of 275 0 C and filament temperature of 10000 C indicate the apperance crystal grains of the dimension of 102A.

The dark conductivity of the polycrystalline silicon thin films (3.61 x 10-4 S/cm) grown at substrate temperature of 250oC was higher than grown with the normal PECVD (10-9 S/cm). This result suggest that the polycrystalline silicon thin films grown by hot wire PECVD system is applicable for TFT devices. CONCLUSION Polycrystalline silicon was grown succesfully on silicon wafer by HW-PECVD using 10 % Silane diluted in hydrogen gas as sources . The variation of substarate temperature range from 175 0 C to 275 0 C result in the variation of the deposition rates in the range of 8.95 A/s to 14.57 A/s. The results from XRD characterization indicates the present of polycrystall structure marked by spectrum peaks of 2 at 28.940 , The observation using SEM 47.680, and 56.390 . characterization also indicate the appearance of the crystal grains in the dimension of 102 A. The dark conductivity thin film obtained is 3.61 10-4 S/cm by this system is higher than thin film is grown by PECVD system. This result suggest that the polycrystalline silicon thin films grown by hot wire PECVD system is applicable for TFT devices. ACKNOWLEDGEMENTS This work was supported by the DCRG URGE project under contract No : 032/DCRG/URGE/2000 Tadulako University. The authors would also like to acknowledges to Amiruddin Supu, SPd, M..Si, Ida Usman, S.Si, and Drs M. Pasaribu, M.Sc for the corporation. REFERENCES

16 14 Deposition Rate (A.s-1) 12 10 8 6 4 2 0 150

P=150 mTorr Tf=1000oC Q=70 Sccm

175 200 225 250 275 300

Substrate Temperature(o C)

Fig. 1 Deposition rate as function from substrate temperature

<111>
Intensitas (A.U.)

<220

<331>
(b) (a)

10

20

30

40
2

50

60

70

80

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Fig. 2 XRD spectrum : a. Silicon wafer, b. Polycrystalline Silicon at Ts = 275 oC

1. Michael Hack, et al (edited) , Amorphous silicon tecnology, 1999, Material Research Society, symposium Proceedings, volume 377. Pitt Sburgh, 1996 2. Mitsuru Ichikawa, Jun Takeshita, Akira Yamada and M. Konagai, Deposition of Policrystalline Silicon by Hot Wire Cell CVD, Japan J. Apply Phys. Vol 38 (1999) L24-L26. 3. A. Atmadi, Fabrikasi dan Karakterisasi Lapisan I, p dan n a-Si:H yang Dideposisi dalam Reaktor PECVD Tunggal pada Frekuensi 70 MHz, Tugas Akhir (S2), Jurusan Fisika, PPS ITB, 1998 (tidak dipublikasikan).

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Proc. of the International Conf. on Electrical, Electronics, Communication, and Information (CECI2001) Jakarta-Indonesia, March 7th-8th, 2001

4. P. Broguera, J.P.Conde, S. Arekat and V. Chu, Amorphous and Microcrystalline Silicon Films Deposited by Hot Wire Chemical Vapor Deposition at Filament Temperatures between 1500 and 1900 C, J. Appl. Phys. 79(11), 1 June 1996, 8748-8760. 5. Syamsu, dkk, Studi Awal Penumbuhan Lapisan Tipis a-Si:H dengan Metoda Hot Wire PECVD, Simposium Fisika Nasional XVIII, Puspitek, Serpong, Tangerang, 25-27 April 2000.

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