2SK2611

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSIII)

2SK2611
DCDC Converter, Relay Drive and Motor Drive Applications
l Low drainsource ON resistance l High forward transfer admittance l Low leakage current l Enhancementmode : RDS (ON) = 1.1 (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm

: IDSS = 100 A (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics Drainsource voltage Draingate voltage (RGS = 20 k) Gatesource voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 30 9 27 150 663 9 15 150 55~150 Unit V V V A A W mJ A mJ C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE

Pulse (Note 1)

Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

SC-65 2-16C1B

Weight: 4.6 g (typ.)

Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (chc) Rth (cha) Max 0.833 50 Unit C / W C / W

Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 15 mH, RG = 25 , IAR = 9 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.

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2SK2611
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gatesource breakdown voltage Drain cutoff current Drainsource breakdown voltage Gate threshold voltage Drainsource ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 15 V, ID = 4 A Min 30 900 2.0 3.0 Typ. 1.1 7.0 2040 45 190 25 Max 10 100 4.0 1.4 pF Unit A V A V V S

Turnon time Switching time Fall time

ton

60

ns

tf

20

Turnoff time Total gate charge (gatesource plus gatedrain) Gatesource charge Gatedrain (miller) Charge

toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 9 A

95 58 32 26

nC

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 9 A, VGS = 0 V IDR = 9 A, VGS = 0 V, dIDR / dt = 100 A / s Test Condition Min Typ. 1.6 20 Max 9 27 1.9 Unit A A V s C

Marking

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RG = 25 VDD = 90 V, L = 15 mH

E AS =

1 B VDSS L I2 2 B VDSS - VDD

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RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice.

2002-06-27

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