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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ598
SWITCHING P-CHANNEL POWER MOS FET

DESCRIPTION
The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

ORDERING INFORMATION
PART NUMBER 2SJ598 2SJ598-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)

FEATURES
Low on-state resistance: RDS(on)1 = 130 m MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 190 m MAX. (VGS = 4.0 V, ID = 6 A) Low Ciss: Ciss = 720 pF TYP. Built-in gate protection diode TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS (TA = 25C)


Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1

(TO-251) 60 m20 m12 m30 23 1.0 150 55 to +150 12 14.4 V V A A W W C C A mJ (TO-252)

VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS

Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy
Note2

Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D14656EJ4V0DS00 (4th edition) Date Published August 2004 NS CP(K) Printed in Japan

The mark

shows major revised points.

2000, 2001

2SJ598
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = 60 V, VGS = 0 V MIN. TYP. MAX. 10 UNIT

A A
V S

VGS = m16 V, VDS = 0 V


VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 6 A VGS = 10 V, ID = 6 A VGS = 4.0 V, ID = 6 A VDS = 10 V VGS = 0 V f = 1 MHz ID = 6 A VGS = 10 V VDD = 30 V RG = 0 ID = 12 A VDD= 48 V VGS = 10 V IF = 12 A, VGS = 0 V IF = 12 A, VGS = 0 V di/dt = 100 A /s 1.5 5 2.0 11 102 131 720 150 50 7 4 35 10 15 3 4 0.98 50 100

m10
2.5

130 190

m m pF pF pF ns ns ns ns nC nC nC V ns nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY


D.U.T. RG = 25 PG. VGS = 20 0 V ID VDD 50 L VDD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T. RL PG. RG VDD VDS()


90% 10% 10% 90%

VGS() VGS
Wave Form

10%

VGS

90%

IAS

BVDSS VDS VGS() 0 Starting Tch = 1 s Duty Cycle 1% VDS


Wave Form

VDS
0

td(on) ton

tr td(off) toff

tf

TEST CIRCUIT 3 GATE CHARGE


D.U.T. IG = 2 mA PG. 50 RL VDD

Data Sheet D14656EJ4V0DS

2SJ598
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 30

dT - Percentage of Rated Power - %

100 80 60 40 20 0

PT - Total Power Dissipation - W

25 20 15 10 5 0

20

40

60

80

100

120 140 160

20

40

60

80

100 120 140 160

TC - Case Temperature - C

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse)


ID - Drain Current - A
10 0

PW
s

10

10
R
( DS on )

Li

d ite

ID(DC)
Po Lim we ite r Di d ss

10
ipa
D

m s

tio

0.1 0.1

TC = 25C Single Pulse 1 10 100

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000

rth(t) - Transient Thermal Resistance - C/W

100

Rth(ch-A) = 125C/W

10 Rth(ch-C) = 5.43C/W 1

0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

Data Sheet D14656EJ4V0DS

2SJ598

FORWARD TRANSFER CHARACTERISTICS 100

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50

ID - Drain Current - A

10

ID - Drain Current - A

40

30

VGS = 10 V 4.0 V

TA = 55C 25C 75C 150C

20

0.1 VDS = 10 V Pulsed 5 4

10
0.01 1

Pulsed 00 2 4 6 8 10

VGS - Gate to Source Voltage - V


RDS(on) - Drain to Source On-state Resistance - m

VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT


| yfs | - Forward Transfer Admittance - S

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 Pulsed 150

100

10 TA = 150C 75C 25C 50C

100

ID = 6 A

0.1 VDS = 10 V Pulsed 0.1 1 10 100 ID - Drain Current - A

50

0.01 0.01

10

15

20

VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-state Resistance - m

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300


VGS(off) - Gate Cut-off Voltage - V

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 VDS = 10 V ID = 1 mA

Pulsed

3.0

200

VGS = 4.0 V 4.5 V 10 V

2.0

100

1.0

0 0.1

10

100

50

50

100

150

ID - Drain Current - A

Tch - Channel Temperature - C

Data Sheet D14656EJ4V0DS

2SJ598

RDS(on) - Drain to Source On-state Resistance - m

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 300 250 200 150 100 50 0 ID = 6 A 50 0 50 100 150 VGS = 4.0 V

SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed

Pulsed
ISD - Diode Forward Current - A

10

VGS = 10 V

10 V

0V

0.1

0.01

0.5

1.0

1.5

Tch - Channel Temperature - C

VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000


Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns

SWITCHING CHARACTERISTICS 1000 VDD = 30 V RG = 0 VGS = 10 V

VGS = 0 V f = 1 MHz

1000

Ciss

100 td(off) tf 10 td(on) tr

100

Coss Crss

10 0.1

10

100

1 0.1

10

100

VDS - Drain to Source Voltage - V

ID - Drain Current - A

REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000


trr - Reverse Recovery Time - ns

DYNAMIC INPUT/OUTPUT CHARACTERISTICS 60


VDS - Drain to Source Voltage - V

50 40 30 20 10 0 0

100

VDD = 48 V 30 V 12 V

VGS

10 8 6 4 2 0 16

10

VDS 2 4 6 8 10 12 14

1 0.1

10

100

IF - Drain Current - A

QG - Gate Charge - nC

VGS - Gate to Source Voltage - V

di/dt = 100 A/s VGS = 0 V

ID = 12 A

12

Data Sheet D14656EJ4V0DS

2SJ598

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100


IAS - Single Avalanche Current - A
Energy Derating Factor - %

SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140


VDD = 30 V RG = 25 VGS = 20 0 V IAS 12 A

IAS = 12 A 10
EAS = 14 .4 m

120 100 80 60 40 20

1 VDD = 30 V RG = 25 VGS = 20 0 V 100 1m 10 m L - Inductive Load - H

0.1 10

0 25

50

75

100

125

150

Starting Tch - Starting Channel Temperature - C

Data Sheet D14656EJ4V0DS

2SJ598
PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3)

2) TO-252 (MP-3Z)

1.5 0.1

+0.2

5.0 0.2
1.6 0.2

0.5 0.1
0.8 4.3 MAX.

4
5.5 0.2 13.7 MIN.

6.5 0.2 5.0 0.2 4

1.5 0.1

+0.2

6.5 0.2

2.3 0.2

2.3 0.2 0.5 0.1

7.0 MIN.

1.1 0.2
+0.2

0.5 0.1
2.3 2.3
0.75

0.5 0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)

+0.2

0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)

EQUIVALENT CIRCUIT
Drain

Gate

Body Diode

Gate Protection Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

0.7

1.1 0.2

2.0 MIN.

5.5 0.2 10.0 MAX.

1.0 MIN. 1.8TYP.

Data Sheet D14656EJ4V0DS

2SJ598

The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
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