EE 105 Midterm-1 Solution

Prof. Ming C. Wu

Spring 2007

19

q := 1.6 10

10

ni := 10 cm

14 F

0 := 8.854 10

Vth := 0.026V

s := 11.7 0

cm

ox := 3.9 0

(1)(a) There are 5 PN junctions

VA

VB

P+

N+

VC

VD

N+

P+

N+ Poly

VD

VE

P+

N+

P+ Poly
N-type Well

(N=1017

cm-3)

P-type Substrate (P= 1016 cm-3)

(b) VA should be connected to the most negative voltage, or -2V, and VE should be connected to
the most positive voltage, or 2V, so that the N-well is reverse-biased
(2) (a)

16

Nd := 10 cm

n := 60mV log

Na := Nd
Nd
ni

bi := n p
(b)
xd( Vd) :=
(c)
Emax :=

p := 60mV log

Na

ni

bi = 0.72 V
2 s ( bi Vd)
q

2 bi
xd( 0 )

Na

Nd

xd( 0 ) = 0.432 m

Emax = 3.335 10

6V

(d) The capacitance is inversely proportional to the depletion width:

C_ratio :=

xd( 10V)
xd( 0 )

C_ratio = 3.859

(3) d := 20 0
(a)

16

td := 1nm

Nd := 10 cm

_n := 60mV log

_pp := 550 mV

Xd_max :=

Nd

_n = 0.36 V

ni

V_FB := ( _pp _n)

(b)

V_FB = 0.91 V

2 s ( 2 _n)

Xd_max = 0.305 m

q Nd

Qb_max := q Nd Xd_max
Cd :=

d
td

V_TH := V_FB 2 _n

Qb_max

V_TH = 0.187 V

Cd

( c)

Charge Density

3.31x10-6 C/cm2
1.6x10-3 C/cm3

tox

Position, x
Xd,max
= 3x10-5 cm

-3.36x10-6 C/cm2
(d) Since 0V < V_TH, the PMOS is in inversion
Qb := Qb_max

Qb = 4.885 10

8 C

Qb

cm
Qc := ( 0 V_TH) Cd

Xd_max

6 C

Qc = 3.316 10

cm

6 C

Qg := ( Qb + Qc)

Qg = 3.365 10

cm

(d) 0V is in inversion, so the capacitance is equal to the capacitance of the dielectric

5 F

Cd = 1.771 10

cm

3 C

= 1.6 10

cm

nCox := 100

(4)

pCox := 50

V
V_THn := 1V

n := 0.05V

V
V_THp := 1 V

Vdd := 5V

W_over_L := 10

(a) Id := 100A
Vx := 4V
Given
pCox
Id =
W_over_L [ ( Vdd Vx)
2

V_THp ) ]

Vb := Find( Vx)
Vb = 3.368 V
Vy := 2V
Given
nCox
2
Id =
W_over_L ( Vy V_THn)
2
Vg := Find( Vy)

(b)

(c)

Vg = 1.447 V

g_m1 :=

2 pCox W_over_L Id

g_m1 = 3.162 10

r0_1 :=

r0_1 = 1 10

4 1

p Id

g_m2 :=

2 nCox W_over_L Id

g_m2 = 4.472 10

r0_2 :=

r0_2 = 2 10

4 1

n Id

Av := g_m2 r0_1

+ r0_2

Av = 74.536

(d) R_in is infinity

R_out := r0_1

+ r0_2

R_out = 1.667 10

(e) Maximum output voltage is reached when M1 is at the edge of saturation

Vout_max := Vb + V_THp

Vout_max = 4.368 V

Minimum output voltage is reached when M2 is at the edge of saturation

Vout_min := Vg V_THn

Vout_min = 0.447 V

(f) The impedance looking into M1 becomes

R_L := g_m1 + r0_1

R_L = 3.152 10

p := 0.01V

Av := g_m2 R_L

Rout := R_L
(g)

+ r0_2

+ r0_2

Av = 1.388

Rout = 3.103 10

Vx := 2.5V
Given
pCox
2

W_over_L [ ( Vdd Vx)

Vout := Find( Vx)

Vout = 2.518 V

V_THp ) ] 1 + p ( Vdd Vx) =

2

nCox
2

W_over_L ( Vy V

V_THn) ( 1 + n Vx)
2