Philips Semiconductors

Product specification

Triacs sensitive gate

GENERAL DESCRIPTION
Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

BT139 series E

QUICK REFERENCE DATA

SYMBOL VDRM IT(RMS) ITSM PARAMETER BT139Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500E 500 16 140 600E 600 16 140 800E 800 16 140 V A A

PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION main terminal 1

PIN CONFIGURATION
tab

SYMBOL

T2
main terminal 2 gate main terminal 2
1 23

T1

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 99 C full sine wave; Tj = 125 C prior to surge; with reapplied VDRM(max) t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 16 140 150 98 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C

I2t dIT/dt

IGM VGM PGM PG(AV) Tstg Tj

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

over any 20 ms period

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. February 1996 1 Rev 1.100

Philips Semiconductors

Product specification

Triacs sensitive gate

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. -

BT139 series E

TYP. 60

MAX. 1.2 1.7 -

UNIT K/W K/W K/W

Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.5 4.0 5.0 11 3.2 16 4.0 5.5 4.0 1.2 0.7 0.4 0.1 MAX. 10 10 10 25 30 40 30 40 30 1.6 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA

IL

Latching current

VD = 12 V; IGT = 0.1 A

IH VT VGT ID

Holding current On-state voltage Gate trigger voltage Off-state leakage current

VD = 12 V; IGT = 0.1 A IT = 20 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. TYP. 50 2 MAX. UNIT V/s s

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs sensitive gate

BT139 series E

25

Ptot / W

BT139

Tmb(max) / C = 180

95

20

IT(RMS) / A

BT139

20
1

120 90

101

99 C 15

15

60 30

107

10
113

10

5
5 119

10 IT(RMS) / A

15

125 20

0 -50

50 Tmb / C

100

150

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.
BT139

Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
BT139

1000

ITSM / A

50

IT(RMS) / A

40

30
100 dI T /dt limit T2- G+ quadrant IT T 10 10us I TSM time

20

10

Tj initial = 125 C max 100us 1ms T/s 10ms 100ms

0 0.01

0.1 1 surge duration / s

10

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.
ITSM / A BT139 IT T 100 ITSM time

Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 99C.
VGT(Tj) VGT(25 C)

150

1.6 1.4 1.2 1

BT136

Tj initial = 125 C max

50

0.8 0.6

10 100 Number of cycles at 50Hz

1000

0.4 -50

50 Tj / C

100

150

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs sensitive gate

BT139 series E

3 2.5 2 1.5

IGT(Tj) IGT(25 C)

BT139E T2+ G+ T2+ GT2- GT2- G+

50

IT / A Tj = 125 C Tj = 25 C

BT139

40

typ
Vo = 1.195 V Rs = 0.018 Ohms

max

30

20

1 0.5 0 -50
10

50 Tj / C

100

150

0.5

1.5 VT / V

2.5

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)

Fig.10. Typical and maximum on-state characteristic.

3 2.5 2 1.5 1

TRIAC

10

Zth j-mb (K/W)

BT139

unidirectional bidirectional

0.1
P D tp

0.01

0.5 0 -50
0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s

50 Tj / C

100

150

10s

Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25C)

Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.
dVD/dt (V/us)

3 2.5 2 1.5 1 0.5

TRIAC

1000

100

10

0 -50

50 Tj / C

100

150

50 Tj / C

100

150

Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.

Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs sensitive gate

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g

BT139 series E

4,5 max 10,3 max

1,3

3,7 2,8
5,9 min

15,8 max

3,0 max not tinned

3,0

13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54

0,9 max (3x)

0,6 2,4

Fig.13. TO220AB; pin 2 connected to mounting base.

Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs sensitive gate

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values

BT139 series E

This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

February 1996

Rev 1.100