Shang-Fan Lee ()

Y. D. Yao(), Y. Liou( )
S. Y. Huang (), F. T. Yuan (), C. Yu ( ), T. W. Chiang (
), L. K. Lin (), L. J. Chang (), Faris B.
Y. L. Chen(), Y. C. Chiu (), Y. H. Chiu ()
Institute of Physics, Academia Sinica
J. J. Liang () D. S. Hung()
Dept. of Physics, Fu Jen University Dept. of Info. Telecom. Eng.
Ming Chuan University
Financial support from National Science Council and Academia Sinica
----

Spintronics ---- Spin transfer torque in magnetic

nanostructures and spin pumping effect
Spintronics :
Electronics with electron spin as an extra degree of freedom
Generate, inject, process, and detect spin currents
Generation: ferromagnetic materials, spin Hall effect, spin
pumping effect etc.
Injection: interfaces, heterogeneous structures, tunnel
junctions
Process: spin transfer torque
Detection: Giant Magnetoresistance, Tunneling MR
38, 898 (2007).
30, 116 (2008).
87, 82 (2009).
Single Magnetic Domain Wall Resistance
Phase diagram of magnetization reversals
Edge roughness effect on domain wall mobility
Current driven magnetization reversals
Possible applications:
Magnetic sensors, Reading heads
Magnetic RAM
Logic operation
Magnetic Nano-structures
-400 -200 0 200 400
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4

M
R

(
%
)
0.0 0.1 0.2 0.3
0.00
0.05
0.10
0.15
0.20
one - step
two - step
w
i
d
t
h

(

m
)
b/a
calculated one - step
calculated two - step
(a)
P1
P3
-400 -200 0 200 400
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
H (Oe)

M
R

(
%
)
or
P2
P2
Variation of magnetization reversal in pseudo-spin-valve elliptical rings
APL 94, 233103 (2009)
Exchange bias in spin glass (Fe
9.6 at.%
Au)/NiFe thin films
APL 96, 162502 (2010)
We investigated the exchange bias in the (Fe9.6 at.%Au)/NiFe.
While the temperature was increased to a compensation
point, sign change in exchange bias was observed in the
thickness range of the FeAu layer from 5 to 100 nm. We
suggest that the inverse bias originates from the magnetic
relaxation of the SG layer induced by the reversible rotation
of interfacial FeAu spins coupled to the magnetic moments of
NiFe. The inverse bias was also found to decrease with the
increasing maximum field of a hysteresis loop
(tranport of magnetization by an electrical curent)
- fundamentals
- switching of magnetization by spin transfer torque
applications (STT-RAM, reprogrammable devices)
- microwave oscillations by spin transfer and applications to
telecommunications
Spin transfer Torque
Compensation between magnetoresistance and switching
current in Co/Cu/Co spin valve pillar structure
MR ratio and current density for induced magnetization reversal showed compensation
behaviors. In order to achieve maximum efficiency (MR ratio) and minimum
consumption (critical current) in a practical device, the thickness of the injection layer
should be around the spin diffusion length for optimum performance.
APL 96, 093110 (2010)
Transport geometry
CIP resistance can be measured easily, CPP resistance
needs special techniques.
From CPP resistance in metallic multilayers, one can
measure interface resistances, spin diffusion lengths, and
polarization in ferromagnetic materials, etc.
lead
CIP geometry
~
CPP geometry
~
lead
Magnetic switching Generation of microwave oscillations
SPIN TRANSFER
H
Transverse
component
The transverse spin component is lost by the
conduction electrons, but is actually transferred to the
global SPIN of the layer rotation of
S S
S
F
1
F
2
~ 0.1 m
S
Concept of spin transfer (Slonczewski 1996)
Au
4 nm
10 nm
Free magn. layer
Cu
Polarizer
Trilayered pillar or tunnel junction
Metallic pillar ~ 50x150 nm
x
1) Magnetization switching by spin
transfer
2) Sustained precession of the
magnetization of the free layer
and generation of radio-frequency
oscillations
Two regimes of spin transfer
Applications: writing a memory, etc
Applications: spin transfer nano-
oscillators (NSTOs) for
communications (telephone, radio,
radar)
Zero or low field
Appl. field
H
Polarizer
magnetization
Free layer magnetization
70 nm
Au
CoFeB
MgO
CoFeB
Tunnel junction ~ 50x170 nm
Experimental observations
A. Giant Magnetoresistance (Disc. 1988)
Change Magnetic Order Change Resistance (or Current)
F
N
F
P
AP
Read Heads; Sensors; MRAM (Tunneling)
B. Current-Driven Switching
F
F
N
J
First F Polarizes J. Polarized J exerts Torque
on second F. +J
c
Flips to AP; -J
c
Flips to P.
Write in MRAM? Write on MR Media?
Q: Physics; Minimize J
c

1.40
1.45
1.50
1.55
1.60
1.65
d
V
/
d
I

(
O
)
AP
P
295K
Py/Cu/Py
1.40
1.45
1.50
1.55
1.60
1.65
-0.2 0 0.2
d
V
/
d
I

(
O
)
H (kOe)
P
AP
1.0
1.1
1.2
1.3
1.4
-6 -4 -2 0 2 4 6
d
V
/
d
I

(
O
)
I (mA)
4.2K
P
AP
1.0
1.1
1.2
1.3
1.4
-0.4 0 0.4
d
V
/
d
I

(
O
)
H (kOe)
AP
P
P AP
Compensation between magnetoresistance and switching
current in Co/Cu/Co spin valve pillar structure
MR ratio and current density for induced magnetization reversal showed compensation
behaviors. In order to achieve maximum efficiency (MR ratio) and minimum
consumption (critical current) in a practical device, the thickness of the injection layer
should be around the spin diffusion length for optimum performance.
APL 96, 093110 (2010)
) 2 (
2
s k s c
M H tM
p
e
J t
o
+ ~

The Definition of Spin Polarization

Spin polarization ():
N N
N N
N
P
+ |
+ |
+

=
normal metal
E
metallic ferromagnet
E
4s
3d
half-metallic
ferromagnet
E
U
ex
P = 0
P = 1 0 < P < 1
Spin polarization of current: Ballistic or diffusive
I I
I I
P
+ |
+ |
+

=
Mazin, PRL 87, 1427 (1999)
How to Determine the Spin Polarization
N N
N N
P
+ |
+ |
+

=
E
D(E)
h
Spin-polarized
photoemission
Point-contact
Andreev reflection
S tip
F V
~
Spin-LED
Substrate
F
Semi-
conducto
r spacer
QW
~
Spin-polarized
tunneling
H
S
F
I
V
~
Efficiency of spin
injection. Effects of
the interface and
spacer are included.
P is barrier
dependent and
junction dependent
u u
u u
+ + | |
+ + | |
+

=
f f
f f
N N
N N
P
Andreev Reflection : A Probe of Spin Polarization
Andreev reflection:
A conversion of normal current
to supercurrent occuring at a
metallic N/S interface.
N S
E
N(E)
A
A
E
F
eV
E
N

(E) N

(E)
The suppression of Andreev
reflection due to spin
polarization serves as a
probe of the degree of
spin polarization.
When N is ferromagnetic,
only part of the electrons
are paired.
Tip-Sample Approach: Differential Screw
differential
screw
The turning shaft
The tip
The sample
The sliding tank
net
movement
0.79375 mm
0.75mm
0.04375mm
Differential screw gives a
better control of the
placement of the tip of 40 m
per revolution.
Modified BTK Theory
Superconducting gap
Spin polarization P
Interface barrier Z
P dependence Z dependence T dependence
-4 -2 0 2 4
0.0
0.5
1.0
1.5
2.0
P=0.4
P=0
N
o
r
m
a
l
i
z
e
d

c
o
n
d
u
c
t
a
n
c
e
V (mV)
T=1.5K
A= 1.5 mV
Z=0
P=1
-4 -2 0 2 4
0.0
0.5
1.0
1.5
2.0
Z=0.4
Z=0
V (mV)
T=1.5K
A= 1.5 mV
Z=0
Z=1
Three parameters :
G. E. Blonder et al., PRB 25, 4515 (1982).
Y. Ji, G. J. Strijkers et al., PRL 86, 5585 (2001).
-4.0 -2.0 0.0 2.0 4.0
1.0
1.5
2.0
T=5K
T=7K
V (mV)
T=3K
Note : ballistic transport assumed
Domain wall
Another spin transfer effect:
displacement of a wall between magnetic domains
Magnetic film
Magnetization to the right Magnetization to the left
Edge Roughness effect on the magnetization reversal
process of spin valve submicron wires
-40 -20 0 20 40
1.000
1.005
1.010
1.015
-40 -20 0 20 40
1.000
1.005
1.010
1.015
-40 -20 0 20 40
1.000
1.005
1.010
1.015
-40 -20 0 20 40
1.000
1.005
1.010
1.015
(d) (c)
(b)


M
R

R
a
t
i
o
no spike (a)


spike 26nm (pitch 200nm)


M
R

R
a
t
i
o
H(Oe)
spike 33nm (pitch 100nm)


H(Oe)
spike 51nm (pitch 200nm)
Submitted to APL
Non-local measurement
Spin diffusion length
Hanle effect
Spin Hall effect & Inverse Spin Hall effect
Spin Pumping (spin battery)
Pure spin current
Spin Hall effect & Inverse Spin Hall effect
The extrinsic SHE is due to asymmetry in electron scattering for up and
down spins. spin dependent probability difference in the electron
trajectories
The Intrinsic SHE is topological band structures,
26
Pure Spin Currents: The Johnson Transistor
F
1
F
2
N
V
e-
L
F1 N F2
Emitter Base
or
Collector
M. Johnson,
Science 260, 320 (1993)
M. Johnson and R. H. Silsbee,
Phys. Rev. Lett. 55, 1790 (1985)
0
F2
F
2
First Experimental Demonstrations
I
+
I
- V
Jedema et al., Nature 410, 345 (2001)
Cu film:
s
= 1 m (4.2 K)
27
Spin Pumping
F
N
Spin accumulation gives rise to spin current
in neighboring normal metal
I
S
t
m
m g I
r
pump
S
c
c
=
+|
t 4

In the FMR condition, the

steady magnetization
precession in a F is maintained
by balancing the absorption of
the applied microwave
and the dissipation of the spin
angular momentum --the
transfer of angular momentum
from the local spins to
conduction electrons, which
polarizes the conduction-
electron spins.
t
m
m g I
r
pump
S
c
c
=
+|
t 4

29
Direct Detection of Spin Pumping via Inverse Spin
Hall Effect
FMR

Spin Current
in adjacent
normal metal

Transverse
Charge Current
E. Saitoh, et al., Appl. Phys. Lett. 88, 182509 (2006).
The spin-orbit interaction bends
these two electrons in the
same direction and induces a
charge current transverse to Js,
The surface of the Py layer is of a
1*1 mm
2
square shape. Two
electrodes are attached to both
ends of the Pt layer.
The microwave mode with a frequency
of f =9.45 GHz is exited in the cavity,
and The microwave power is 100 mW.
The FMR spectrum shows that the
magnetization in the Py layer resonates at
HF
MR
=130 mT.
A possible small discrepancy in the
sample position from the center of the cavity
may cause a microwave electric field at the
sample position and may generate dc AHE in
cooperation with FMR.
the ISHE contribution dominates the observed
V signal
31
E. Saitoh, et al., Appl. Phys. Lett. 88, 182509 (2006).
32
Spin Pumping
Ferromagnetic Resonance results in time-
dependent interfacial spin accumulation
This spin accumulation diffuses away from the
interface
Results in net dc spin current perpendicular to
interface
Additional spin current gives rise to additional
damping
Quantify spin current from
linewidth broadening
F N
I
S
33
Combine Spin Pumping and
Inverse Hall Effect
Use Spin Pumping to Generate Pure Spin Current
Quantify Spin Current from FMR
Measured Voltage Directly Determines Spin Hall Conductivity
Key Advantage: Signal Scales with Device Dimension
34
Determine Spin Hall Angle for Many Materials
Pt Au Mo
= 0.0120
0.0001
= 0.0025
0.0006
= -0.00096
0.00007
Enhancement of magnetic damping in NiFe thin
films by structural defects
H = H
0
+ 4f/
= g|e|/2mc
H = H
0
+ 4f/ = g|e|/2mc
Summary
GMR effect charge can be controlled
by magnetization (spin).
STT (spin transfer torque) effect
-- magnetization can be controlled by
spin polarized current.
-- New materials with high spin polarization,
low saturation moments,
high Curie temperature are needed.
Pure spin current will it be realized in circuits?
The Definition of Spin Polarization
Spin polarization ():
N N
N N
N
P
+ |
+ |
+

=
normal metal
E
metallic ferromagnet
E
4s
3d
half-metallic
ferromagnet
E
U
ex
P = 0
P = 1 0 < P < 1
Spin polarization of current: Ballistic or diffusive
I I
I I
P
+ |
+ |
+

=
Mazin, PRL 87, 1427 (1999)
How to Determine the Spin Polarization
N N
N N
P
+ |
+ |
+

=
E
D(E)
h
Spin-polarized
photoemission
Point-contact
Andreev reflection
S tip
F V
~
Spin-LED
Substrate
F
Semi-
conducto
r spacer
QW
~
Spin-polarized
tunneling
H
S
F
I
V
~
Efficiency of spin
injection. Effects of
the interface and
spacer are included.
P is barrier
dependent and
junction dependent
u u
u u
+ + | |
+ + | |
+

=
f f
f f
N N
N N
P
Andreev Reflection : A Probe of Spin Polarization
Andreev reflection:
A conversion of normal current
to supercurrent occuring at a
metallic N/S interface.
N S
E
N(E)
A
A
E
F
eV
E
N

(E) N

(E)
The suppression of Andreev
reflection due to spin
polarization serves as a
probe of the degree of
spin polarization.
When N is ferromagnetic,
only part of the electrons
are paired.
Tip-Sample Approach: Differential Screw
differential
screw
The turning shaft
The tip
The sample
The sliding tank
net
movement
0.79375 mm
0.75mm
0.04375mm
Differential screw gives a
better control of the
placement of the tip of 40 m
per revolution.
Modified BTK Theory
Superconducting gap
Spin polarization P
Interface barrier Z
P dependence Z dependence T dependence
-4 -2 0 2 4
0.0
0.5
1.0
1.5
2.0
P=0.4
P=0
N
o
r
m
a
l
i
z
e
d

c
o
n
d
u
c
t
a
n
c
e
V (mV)
T=1.5K
A= 1.5 mV
Z=0
P=1
-4 -2 0 2 4
0.0
0.5
1.0
1.5
2.0
Z=0.4
Z=0
V (mV)
T=1.5K
A= 1.5 mV
Z=0
Z=1
Three parameters :
G. E. Blonder et al., PRB 25, 4515 (1982).
Y. Ji, G. J. Strijkers et al., PRL 86, 5585 (2001).
-4.0 -2.0 0.0 2.0 4.0
1.0
1.5
2.0
T=5K
T=7K
V (mV)
T=3K
Note : ballistic transport assumed
Point contact Andreev reflection
R.J. Soulen, J.M. Broussard, B. Nadgorny, T. Ambrose, Science 282, 85(1998)
Superconducting tip
film
-10 -5 0 5 10
1.00
1.05
1.10
MBTK:
T=4.20K
z=0.00
p=0.475
A=1.00 meV
I=0.030
3D BTK:
T=4.20K
z1=0.155
z2=1.05
z3=11.5
p=0.385
A=0.950 meV
I=0.030


C
o
n
d
u
c
t
a
n
c
e
V(mV)
data
MBTK
3D BTK
Our new BTK model
}
' A = dE eV E f E Z Z Z P F
G
G
NN
NS
) ( ) , , 3 , 2 , 1 , (
III II
d d c c z a a z z z ) * * ( 3 ) * ( 2 1 + + =
II
I
III
N S
Modified BTK theory
}
' A = dE eV E f E Z P F
G
G
NN
NS
) ( ) , , , (