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DESCRIPTION
The SSM09N90GW acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters and offline power supplies. The SSM09N90GW is in a TO-247 (TO-3P) package, which is widely used for commercial and industrial applications, where the greater pin spacing is needed to meet safety specifications. The through-hole package is suitable for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached.
G D S
TO-247 (suffix W)
Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25C TC = 100C Pulsed drain current
1
Units V V A A A W W/C mJ
A mJ
Total power dissipation, TC = 25C Linear derating factor Single pulse avalanche energy
Avalanche current Repetitive avalanche energy
92
5.2 8.6
TSTG TJ
C C
THERMAL CHARACTERISTICS
Symbol
R JC R JA
Parameter
Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient
Value
0.52 40
Units
C/W C/W
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area. 2. Pulse width <300us, duty cycle <2%. 3. Starting Tj=25C, VDD=50V , L=6.8mH , RG=25 , IAS=5.2A.
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SSM09N90GW
ELECTRICAL CHARACTERISTICS
Symbol BVDSS Parameter Drain-source breakdown voltage
Breakdown voltage temperature coefficient
BV DSS/ Tj
RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
2 -
V S uA uA nA nC nC nC ns ns ns ns pF pF pF
VDS=900V, VGS=0V
VDS=720V ,VGS=0V, Tj = 125C VGS=30V ID=8.6A VDS=540V VGS=10V VDS=450V ID=5A RG=10 , VGS=10V RD=90 VGS=0V VDS=25V f=1.0MHz
Gate-source charge Gate-drain ("Miller") charge Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
2
4087 6000
Source-Drain Diode
Symbol VSD IS I SM Parameter Forward voltage
2
Min. -
Typ. -
VD=VG=0V, VS=1.5V
8.6
3
A
A
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150C. 2.Pulse width <300us, duty cycle <2%.
8/31/2006 Rev.3.1
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SSM09N90GW
21 10
10V 5.5V
8
T C =150 o C
14
5.0V
V GS = 4.0 V
2
V GS =10V
0 0 10 20 30 40 0 0 12 24 36
1.3
0.9
T j , Junction Temperature (
C)
T j , Junction Temperature ( C )
10
IS (A)
T j = 150 o C
T j = 25 o C
VGS(th) (V)
2 1
1.4 1.6
0.1
0 0.2 0.4 0.6 0.8 1 1.2
-50
50
100
150
T j , Junction Temperature ( o C)
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SSM09N90GW
f=1.0MHz
14
10000
I D =8.6A
12
Ciss
10
C (pF)
Coss
100
Crss
0 0 10 20 30 40 50 60 70 80 90
1 1 5 9 13 17 21 25 29
100
10us
10
0.2
ID (A)
100us 1ms
1
0.1
0.1
0.05
PDM
0.02
t T
DC
VDS 90%
VG
8/31/2006 Rev.3.1
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SSM09N90GW
PHYSICAL DIMENSIONS - TO-247
E
A
SYMBOLS
Millimeters
MIN NOM MAX
L1
A A1
4.60 1.20 0.80 2.80 1.80 0.55 1.45 19.70 15.40 5.15 16.20 3.60 3.30
4.80 1.40 1.00 3.00 2.00 0.60 1.50 19.90 15.60 5.45 16.50 3.80 3.50
5.00 1.60 1.20 3.20 2.20 0.75 1.65 20.10 15.80 5.75 16.80 4.00 3.70
c1
D
b b1
b2
c c1
D E
L3
b1
b2 A1 L c
b
e
L L1 L3
PACKING:
09N90GW YWWSSS
PART NUMBER: 09N90GW = SSM09N90GW DATE/LOT CODE: Y = last digit of the year WW = work week (01 -> 52) SSS = lot code sequence
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
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