Fujitsu Semiconductor Europe Factsheet FerVID RFID products

HF and UHF RFID products with embedded FRAM

Fujitsu offers HF and UHF RFID products with embedded FRAM (Ferroelectric Random Access Memory) based on Fujitsu's cutting-edge technologies. Compared to conventional E2PROM/Flash based RFID chips, the FerVID Family enables the same high speed data transfer rate for both reading and writing over long distances. The write endurance, specified to 10 billion cycles, is far higher than that of conventional RFID tags, thus saving cost and time in applications. The products are ISO/IEC15693, ISO/IEC 18000-3 or EPCglobal Class 1 Generation 2 compliant. Fujitsu offers wafers, sawn wafers or packaged chips. Derivatives with combined contactless and contact based SPI interface are available. Applications Fujitsus RFID products with 256 Bytes to 4KBytes of FRAM, are ideally suited to many applications and markets including: I Logistics, supply chain management I Passenger tickets, subscription cards I Factory Automation I Access control I Medical and Food Industry applications I Sensor and Data logging I Maintenance tracking

What is FRAM? FRAM (ferroelectric random access memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, FRAM features high speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal for use in RFID products, where high security and low power consumption are important. What is Ferroelectric material? PZT (Pb (ZrTi)O3) material which has a perovskite-type structure (ABO3), is commonly

used as a typical ferroelectric material. When an electric field is applied the Zr/Ti atom shifts up or down, and this polarisation remains when the electric field is removed. It is this property that provides non-volatility and keeps the power required for data storage very low. Fujitsu is a pioneer in this innovative technology. With more than 10 years of experience in developing and manufacturing FRAM products, it has now shipped more than 300 million FRAM devices. The industry is embracing it as a mature technology.

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Factsheet Fujitsu Semiconductor FerVID RFID products

FRAM and RFID Key features Range Low power consumption can improve the operating range. The power delivered to the load must provide certain threshold voltage and power for the circuits to function. Because of the low power consumption nature of FRAM, the operating range could be improved within given field strength or power density. Speed and High Capacity FRAM memories can be written as fast as they can be read out. I.e. FRAM write access is about 25 times faster than E2PROM write access. Furthermore, the high speed access and low power consumption allows the design of high capacity RFID chips. Almost unlimited read-write times With read-write endurance of 1E10, FRAM is more durable and suitable for applications, which requires frequent write. This is an important feature for RFID based production line control, where tags shall be reused many times.

Gamma Radiation Hardness Unlike E2PROM, Ferroelectric Memories do not lose their content due to radiation exposure. Therefore FRAM based RFID tags are ideally suited for medical applications or applications in the food industry where sterilization is performed by irradiation. FRAM data is protected against up to 50kGy gamma ray sterilization Dual Interface The device MB97R803A is available in two different types. A conventional contactless EPCglobal RFID product and a derivative with an additional contact based SPI interface. This dual interface type can be implemented as part of a Microcontroller based embedded system. Data, captured by sensors and the Microcontroller, might be stored in the FRAM device. Via the contactless UHF interface, the user has easy and convenient access to this data. Vice versa, the user can transfer configuration and control data to the embedded system via the RF field. Many applications like logistic tracking systems, data logging, information displays or vending machines, can benefit from this feature.

Key Features Summary I 13.56MHz, ISO15693, ISO18000-3 I 860-900MHz UHF EPCglobal C1G2 standard I High capacity memory, up to 4kB FRAM I Long range read/write access I High endurance: 1010 read/write cycles I High speed programming: - 75.52s/8Bytes block I Gamma ray resistance up to 50kGy I Dual Interface option: - UHF and SPI

(PCB)
RF (Reader/Writer)

MCU

SPI

FRAM

Block diagram of a dual interface system

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Item

Delivery form

MB89R118C Wafer Sawn wafer

MB89R119B Wafer Sawn wafer

MB97R803A Wafer Sawn wafer

User memory area

Memory capacity

Standards

Operating frequency

System memory area

2000Bytes -

2kBytes FRAM

Ambient operating temperature Ambient storage temperature Input capacitance Data retention period

Modulation type

-20 C to +85 C 24pF and 96pF 10 cycles

10

10%ASK, 100%ASK

ISO/IEC 15693* ISO/IEC 18000-3 (Mode 1)*

13.56MHz 7kHz

232Bytes

256Bytes FRAM

ISO/IEC 15693* ISO/IEC 18000-3 (Mode 1)* -20 C to +85 C 24pF and 96pF
10

13.56MHz 7kHz

860MHz to 960 MHz

(including Reserved, EPC, and TID): 384 Byte EPCglobal Class 1 Generation 2 (C1G2)

3.5kByte

4KByte FRAM

16-pin TSSOP package

10%ASK, 100%ASK

-40 C to +85 C 10 years at 70 C

-40 C to +85 C 10 years at 70 C

-20 C to +85 C -

DSB-ASK, SSB-ASK, PR-ASK -40 C to +85 C 10 years at 70 C

Data integrity Anticollision

Data read/write endurance

16-bit CRC per block 26.48kbits/sec 52.96kbits/sec with Fast commands 30 tags per second

10 cycles

Data Rx Rate Reader/Writer->Tag Data Tx Rate Tag->Reader/Writer Examples of data reading *1 UID/TID Others Examples of data writing *2

30 tags per second

16-bit CRC per block

1010 cycles 16-bit CRC

26.48kbits/sec 52.96kbits/sec with Fast commands 1525ms (2048 Bytes) 64bits 1413ms (2000 Bytes) 8Bytes/block configuration Reading up to 256 blocks using custom lump commands EAS command (Electronic Article Surveillance) -

26.48kbits/sec 52.96kbits/sec with Fast commands

yes, EPCglobal C1G2 Ver. 1.2.0, compliant 26.7kbps to 128kbps 40kbps to 640kbps 256bits

26.48kbits/sec 52.96kbits/sec with Fast commands -

64bits

SPI interface supply voltage Power supply current

8Bytes/block configuration Reading up to 256 blocks using custom lump commands EAS command (Electronic Article Surveillance)

Optional SPI interface Permalock Command

Package

SPI clock

2MHz

16-pin TSSOP (FPT-16P-M08) (11-pins functional)

<500A

3.3V 0.3 V (required for SPI access only)

* Partly not supported *1 : Read with the Read Multiple Blocks command (UID contained) *2 : Write with the Write Multiple Blocks command (UID contained)

16-pin plastic TSSOP

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Factsheet Fujitsu Semiconductor FerVID RFID products

MCU Board
3axis Accelerometer FM3 MCU MB9BF506

Antenna Board
Activation Status Reader / writer

Temperature and Humidity Sensor Illumination Sensor

Embedded RF board with FM3 MCU, sensors and UHF RFID chip

FRAM Embedded RFID IC

Embedded RF Board with FM3 Microcontroller and sensors MCU Board specification MCU: 32-bit ARM Cortex M3 Fujitsu MB9BF506R I Sensors: 3axis accelerometer, illumination, temperature and humidity I LCD, USB, RS232 I Extension Header (I2C) for additional external devices I SPI connection to antenna board I JTAG I/F for firmware update and debugging
I

Antenna Board specification I FRAM embedded RFID device with serial SPI I/F: MB97R803A UHF (860-960MHz)

Applications I Sensor data logging into FRAM via SPI I System parameters loaded from FRAM via SPI I Text is loaded from FRAM to change information on LCD I MCU firmware update from FRAM via SPI I Read logged sensor data via RF interface I Transfer system parameters to FRAM via contactless RF interface I Transfer LC-Display text into FRAM via RF interface I Contactless transfer of MCU firmware code into FRAM via RF interface

All company and product trade marks and registered trade marks used throughout this literature are acknowledged as the property of their respective owners.

fram.fseu@de.fujitsu.com http://emea.fujitsu.com/fram
FSEU-C46-4FEB11

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