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NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: Dynamic dv/dt Rating Repetitive Avalanche
NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: Dynamic dv/dt Rating Repetitive Avalanche

NTE2379

MOSFET N–Channel, Enhancement Mode High Speed Switch

Features:

Dynamic dv/dt Rating

Repetitive Avalanche Rated

Fast Switching

Ease of Paralleling

Simple Drive Requirements

Absolute Maximum Ratings:

Gate–Source Voltage, V GS Drain Current, I D Continuous (V GS = 10V)

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T

C

=

+25°C

. T C = +100°C Pulsed (Note 1)

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Energy (Note 2), E AS

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= +25°C),

P D

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Range,

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T J

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Derate Above 25°C

. Gate Current (Pulsed), I GM

Single Pulsed Avalanche

. Repetitive Avalanche Energy (Note 1), E AR

Peak Diode Recovery dv/dt (Note 3), dv/dt

Total Power Dissipation (T C

. Operating Junction Temperature

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Storage Temperature Range, T stg Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), T L Thermal Resistance:

.

Avalanche Current (Note 1), I AR

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Maximum Junction–to–Case, R thJC Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R thCS Maximum Junction–to–Ambient (Free Air Operation), R thJA

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±20V

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6.2A

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3.9A

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25A

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±1.5A

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570mJ

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6.2A

 

13mJ

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3V/ns

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125W

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. –55° to +150°C

1.0W/°C

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–55° to +150°C

 

+300°C

1.0°C/W

0.5°C/W

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62°C/W

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. V DD = 50V, starting T J = +25°C, l = 27mH, R G = 25, I AS = 6.2A. Note 3. I SD 6.2A, di/dt 80A/µA, V DD V (BR)DSS , T J +150°C.

Electrical Characteristics: (T J = +25°C unless otherwise specified)

Parameter

Symbol

 

Test Conditions

Min

Typ

Max

Unit

DrainSource Breakdown Voltage

BV DSS

V GS = 0V, I D = 250µA

600

V

Gate Threshold Voltage

V

GS(th)

V DS = V GS , I D = 250µA

2.0

4.0

V

GateSource Leakage Forward

 

I

GSS

V GS = 20V

100

nA

GateSource Leakage Reverse

 

I

GSS

V GS = 20V

100

nA

DrainSource Leakage Current

 

I

DSS

V DS = 600V, V GS = 0

100

µA

 

V DS = 480V, V GS = 0, T C = +150°C

500

µA

Static DrainSource ON Resist- ance

R

DS(on)

V GS = 10V, I D = 3.7A, Note 4

1.2

Forward Transconductance

 

g

fs

V DS 100V, I D = 3.7A, Note 4

4.7

mhos

Input Capacitance

 

C

iss

V GS = 0V, V DS = 25V, f = 1MHz

1300

pF

Output Capacitance

 

C

oss

160

pF

Reverse Transfer Capacitance

 

C

rss

30

pF

TurnOn Delay Time

t

d(on)

V DD = 300V

,

I D = 6.2A, R G = 9.1,

32

ns

Rise Time

 

t

r

R D = 47, Note 4

18

ns

TurnOff Delay Time

t

d(off)

55

ns

Fall Time

 

t

f

20

ns

Total Gate Charge

 

Q

g

V GS = 10V, I D = 6.2A, V DS = 360V

60

nC

GateSource Charge

 

Q

gs

8.3

nC

GateDrain (Miller) Charge

 

Q

gd

30

nC

Internal Drain Inductance

 

L

D

Between lead, 6mm (.250 in) from package and center of die contact

4.5

nH

Internal Source Inductance

 

L

S

7.5

nH

SourceDrain Diode Ratings and Characteristics

 

Continuous Source Current

 

I

S

(Body Diode)

 

6.2

A

Pulse Source Current

 

I

SM

(Body Diode) Note 1

25

A

Diode Forward Voltage

 

V

SD

T J = +25°C, I S = 6.2A, V GS = 0V, Note 4

1.5

V

Reverse Recovery Time

 

t

rr

T J = +25°C, I F = 6.2A, di/dt = 100A/µs, Note 4

450

940

ns

Reverse Recovery Charge

 

Q

rr

3.8

7.9

µC

Forward TurnOn Time

 

t

on

Intrinsic turnon time is neglegible (turnon is dominated by L S + L D )

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.

.420 (10.67) Max .500 Max .250 (6.35) Max .500 Min Source
.420 (10.67)
Max
.500
Max
.250 (6.35)
Max
.500
Min
Source

Gate

(12.7)

(12.7)

Drain/Tab

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

.100 (2.54)