BC556 to BC558

Vishay Semiconductors

Small Signal Transistors (PNP)

Features
PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC556 is available in groups A and B, however, the types BC557 and BC558 can be supplied in all three groups. As complementary types, the NPN transistors BC546...BC548 are recommended. On special request, these transistors are also manufactured in the pin configuration TO-18.
C 1 2 B 1
18979

3 E 3

Mechanical Data
Case: TO-92 Plastic case Weight: approx. 177 mg Packaging Codes/Options: BULK / 5 k per container 20 k/box TAP / 4 k per Ammopack 20 k/box

Parts Table
Part BC556A BC556B BC557A BC557B BC557C BC558A BC558B BC558C Ordering code BC556A-BULK or BC556A-TAP BC556B-BULK or BC556B-TAP BC557A-BULK or BC557A-TAP BC557B-BULK or BC557B-TAP BC557C-BULK or BC557C-TAP BC558A-BULK or BC558A-TAP BC558B-BULK or BC558B-TAP BC558C-BULK or BC558C-TAP Remarks Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack Bulk / Ammopack

Document Number 85133 Rev. 1.2, 16-Nov-04

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BC556 to BC558
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Collector - base voltage Test condition Part BC556 BC557 BC558 Collector - emitter voltage BC556 BC557 BC558 BC556 BC557 BC558 Emitter - base voltage Collector current Peak collector current Peak base current Peak emitter current Power dissipation
1)

Symbol - VCBO - VCBO - VCBO - VCES - VCES - VCES - VCEO - VCEO - VCEO - VEBO - IC - ICM - IBM IEM

Value 80 50 30 80 50 30 65 45 30 5 100 200 200 200 5001)

Unit V V V V V V V V V V mA mA mA mA mW

Tamb = 25 C

Ptot

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

Maximum Thermal Resistance

Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range
1)

Test condition

Symbol RJA Tj TS

Value 250
1)

Unit C/W C C

150 - 65 to + 150

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

Electrical DC Characteristics
Parameter Small signal current gain (current gain group A) Small signal current gain (current gain group B) Small signal current gain (current gain group C) Input impedance (current gain group A) Input impedance (current gain group B) Input impedance (current gain group C) Test condition - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz Part Symbol hfe hfe hfe hie hie hie hoe hoe hoe hre 1.6 3.2 6 Min Typ 220 330 600 2.7 4.5 8.7 18 30 60 1.5 x 10-4 4.5 8.5 15 30 60 110 k k k S S S Max Unit

Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz group A) Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz group B) Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz group C) Reverse voltage transfer ratio (current gain group A) - VCE = 5 V, - IC = 2 mA, f = 1 kHz

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Document Number 85133 Rev. 1.2, 16-Nov-04

BC556 to BC558
Vishay Semiconductors
Parameter Reverse voltage transfer ratio (current gain group B) Reverse voltage transfer ratio (current gain group C) DC current gain (current gain group A) DC current gain (current gain group B) DC current gain (current gain group C) DC current gain (current gain group A) DC current gain (current gain group B) DC current gain (current gain group C) DC current gain (current gain group A) DC current gain (current gain group B) DC current gain (current gain group C) Collector saturation voltage Base saturation voltage Base - voltage Collector-emitter cut-off current Test condition - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 10 A - VCE = 5 V, - IC = 10 A - VCE = 5 V, - IC = 10 A - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 100 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA - VCE = 80 V - VCE = 50 V - VCE = 30 V - VCE = 80 V, Tj = 125 C - VCE = 50 V, Tj = 125 C - VCE = 30 V, Tj = 125 C BC556 BC557 BC558 BC556 BC557 BC558 Part Symbol hre hre hFE hFE hFE hFE hFE hFE hFE hFE hFE VCEsat VCEsat VBEsat VBEsat VBE VBE ICES ICES ICES ICES ICES ICES 0.2 0.2 0.2 600 110 200 420 Min Typ 2 x 10-4 3 x 10-4 90 150 270 180 290 500 120 200 400 80 250 700 900 660 700 800 15 15 15 4 4 4 300 650 mV mV mV mV mV mV nA nA nA A A A 220 450 800 Max Unit

Electrical AC Characteristics
Parameter Gain bandwidth product Collector - base capacitance Noise figure Test condition - VCE = 5 V, - IC = 10 mA, f = 100 MHz - VCB = 10 V, f = 1 MHz - VCE = 5 V, - IC = 200 A, RG = 2 k, f = 1 kHz, f = 200 Hz BC556 Part Symbol fT CCBO F 2 Min Typ 150 6 10 Max Unit MHz pF dB

BC557 BC558

F F

2 2

10 10

dB dB

Document Number 85133 Rev. 1.2, 16-Nov-04

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BC556 to BC558
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
P - Admissible Power Dissipation (mW) tot 500
-I CBO - Collector-Base Cut-off Current (nA)

10000 1000 100 10

test voltage - VCBO :

400

300

200

100 0 0 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature (C)

1 0.1

equal to the given maximum value - VCEO typical maximum

19181

19184

20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature (C)

Figure 1. Admissible Power Dissipation vs. Ambient Temperature

Figure 4. Collector-Base Cut-off Current vs. Ambient Temperature

1000
hFE - DC Current Gain

-VCE = 5 V 100 C T amb = 25 C - 50 C

100

-V = 5 V CE

I C - Collector Current (mA)

100

10
25 C

10

1
Tamb = 100 C -50 C

1 0.01
19183

0.1

10 0.1 1 IC - Collector Current (mA)

100
19185

0.5 V - Base-Ermitter Voltage (V) BE

Figure 2. DC Current Gain vs. Collector Current

Figure 5. Collector Current vs. Base-Emitter Voltage

r thA - Pulse Thermal Resistance (C/W)

CEBO / CCBO - Collector / Emitter Base Capacitance (pF)

1000

20
T amb = 25 C

100

0.2 0.1 0.05 0.02 10 0.01 0.005

10
C CBO

CEBO

=0

tp

= T

tp T

PI

19182

0.1 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p - Pulse Length (s)

10 100

19186

0 10 0.1 1 -V CBO, -VEBO - Reverse Bias Voltage (V)

Figure 3. Pulse Thermal Resistance vs. Pulse Duration

Figure 6. Collector-Base Capacitance, Emitter-Base Capacitance vs. Bias Voltage

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Document Number 85133 Rev. 1.2, 16-Nov-04

BC556 to BC558
Vishay Semiconductors

-V CEsat - Collector Saturation Voltage (V)

0.5 0.4 0.3

-I C /-I B = 2 0

0.2
Tamb = 100 C 25 C

0.1
- 50 C

19187

0 0.1

10 1 IC - Collector Current (mA)

100

Figure 7. Collector Saturation Voltage vs. Collector Current

100 he(IC ) / h e(-IC = 2 mA)

-V CE = 5 V Tamb = 25 C

10
h ie h re

1
h fe hoe

0.1 0.1
19188

1 I C - Collector Current (mA)

10

Figure 8. Relative h-Parameters vs. Collector Current

1000
f r - Gain-Bandwidth Product (MHz)

Tamb = 25 C -V CE = 10 V 5V

100
2V

10 0.1
19189

10

100

I C - Collector Current (mA)

Figure 9. Gain-Bandwidth Product vs. Collector Current

Document Number 85133 Rev. 1.2, 16-Nov-04

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BC556 to BC558
Vishay Semiconductors Packaging for Radial Taping
Dimensions in mm

12.7 1

0.3

0.2

12 0.3

1 -0.5

0.5

"H"

Vers. Dim. "H" FSZ 27 0.5

18

4 0.2

5.08 0.7 2.54 6.3 0.7 12.7 0.2 Measure limit over 20 index - holes: 1
+ 0.6 - 0.1

0.9 max

18787

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Document Number 85133 Rev. 1.2, 16-Nov-04

BC556 to BC558
Vishay Semiconductors Package Dimensions in mm (Inches)

4.6 (0.181)
4.6 (0.181)

3.6 (0.142)

max. 0.55 (0.022) 2.5 (0.098)

min. 12.5 (0.492)

Bottom View

18776

Document Number 85133 Rev. 1.2, 16-Nov-04

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BC556 to BC558
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 85133 Rev. 1.2, 16-Nov-04

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.