JUNCTIONS

Basic structure of PN junctions:

Adjacent figure shows a pn junction .The p-region has negatively(-) charged atoms with a higher concentration of holes as majority charge while n-region has positively(+) charged atoms with a higher concentration of electrons as majority charge. When a p-region and n-region are brought in close contact, this large concentration gradient at the junctions causes diffusion of carriers while holes diffuse from the p-region to the n-region, electrons diffuse from the n-region to the p-region. As the electrons diffuse from n-region, positively charged donor atoms are left behind. Similarly, as holes diffuse from the p-region, they produce negatively charged acceptor atoms. This process results in some uncompenrated donor ions (Na) in this n-region and some uncompenrated acceptor ion (Na) in the p-region near the junctions consequently a negative space charge builds up in the p-region and a positive space charge in the n-region. This space charge region works as barrier and stops further recombination of electrons and hole pairs.

Equilibrium condition
In the space charge region or depletion region, built in electric field is created and directed from positive charge to negative charge. This gives rise to a drift current. The direction of drift current will be opposite to that of the diffusion current for both electron and holes. An equation condition is reached where there is no net transparent of carriers as the diffusion component is balanced by an equal and opposite drift component of current. Since there can be no net built up charge on either side of the junction as a function of time, the drift and diffusion components of the current must cancel

each other for both type of charge carriers. Therefore current density due to holes: Jp = Jp(drift) + Jp(diffusion) Current density due to electrons Jn = Jn(drift) + Jn(diffusion)

Energy band diagram

If we consider the p and n region separately then the corresponding energy band diagram is shown below: As we know that for any junction at thermal equation, the Fermi-level (Ef) must be constant throughout (in both p and n regions). So, the energy band diagram for this abrupt p-n junction can be drawn simply by aligning the Fermi-level as shown below From the junction, the electron and hole concentrations on both sides remains unaffected and hence, the position of Ev and Ec with respect to the Fermi-level (Ef) is also remain the same as they were before the junction was formed. In the space charge region, however, the conduction and valence band edges bend, according for the presence of an electric field. Since the energy band diagram reflects the electronic potential, the n region is at higher electrostatic potential than p region. This difference in Ec (or Ev) from the p region to the n region is given by qVbc where Vbi is called the contact potential or the built in potential.