DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N4148; 1N4446; 1N4448 High-speed diodes

Product specication Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03

Philips Semiconductors

specification

Diodes rapides
Caracteristiques Encapsulees hermetiquement dans un boitier SOD27 (DO-35) Commutation rapide : max. 4 ns Application generale Tension continue inverse : max. 75 V Tension de pointe repetitive inverse: max. 75 V Courant direct de pointe repetitif : max. 450 mA. APPLICATIONS Commutation rapide.
handbook, halfpage k

1N4148; 1N4446; 1N4448

DESCRIPTION Les 1N4148, 1N4446, 1N4448 sont des diodes de commutations rapides utilisant le technologie planar, encapsulees hermetiquement dans un boitier de verre SOD27 (DO-35) .

MAM246

Fig.1 Boitier simplifie (SOD27; DO-35) et symbole.

Valeurs limites En accord avec les valeurs maximums absolues du systeme (IEC 134). Symbole VRRM VR IF IFRM IFSM Parametre Tension de pointe repetitive inverse Tension continue inverse Courant direct continu Courant direct de pointe repetitif Courant direct de pointe non repetitif Onde carree ; T = 25 C j t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1.Composant monte sur un circuit imprime avec des longueurs de broches de 10mm Puissance totale dissipee Temperature de stockage Temperature de jonction Tamb = 25 C; note 1 65 4 1 0.5 500 +200 200 A A A mW C C voir Fig.2; note 1 Conditions MIN. MAX. 75 75 200 450 V V mA mA UNITE

1996 Sep 03

Philips Semiconductors

Specification

Diodes rapides
CARACTERISTIQUES ELECTRIQUES Tj = 25 C; sauf information contraire. Symbole VF Parametre Tension directe 1N4148 1N4446 1N4448 IR IR Cd trr Courant inverse Courant inverse ; 1N4448 Capacite de la diode Temps de recouvrement inverse IF = 10 mA IF = 20 mA IF = 5 mA IF = 100 mA VR = 20 V Conditions

1N4148; 1N4446; 1N4448

MIN. 0.62

MAX. 1.0 1.0 0.72 1.0 25 50 3 4 4

UNITE V V V V nA A A pF ns

VR = 20 V; Tj = 150 C VR = 20 V; Tj = 100 C f = 1 MHz; V R = 0 Avec commutation : I F = 10 mA a IR = 60 mA; RL = 100 ; mesure a IR = 1 mA Avec commutation IF = 50 mA; tr = 20 ns

Vfr

Tension de recouvrement directe

2.5

CARACTERISTIQUES THERMIQUE Symbole Rth j-tp Rth j-a Note 1.Composant monte sur circuit imprime sans trou metallise Parametre Resistance thermique jonction boitier Resistance thermique jonction air ambiant Conditions longueur des broches 10 mm longueur des broches 10 mm ; note 1 Valeur 240 350 Unite K/W K/W

1996 Sep 03

Philips Semiconductors

Product specication

Diodes Rapides
GRAPHICAL DATA

1N4148; 1N4446; 1N4448

handbook, halfpage

300

MBG451

handbook, halfpage

600

MBG464

IF (mA) 200

IF (mA) 400
(1) (2) (3)

100

200

0 0 100 Tamb (oC) 200

0 0 (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. 1 VF (V) 2

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

Fig.2

Maximum permissible continuous forward current as a function of ambient temperature.

Fig.3

Forward current as a function of forward voltage.

102 handbook, full pagewidth IFSM (A)

MBG704

10

101 1 Based on square wave currents. Tj = 25 C prior to surge. 10

102

103

tp (s)

104

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Sep 03

Philips Semiconductors

Product specication

High-speed diodes

1N4148; 1N4446; 1N4448

103 handbook, halfpage IR (A)

MGD290

MGD004

handbook, halfpage

1.2

10

Cd (pF) 1.0
(1) (2)

10 0.8 1

101

0.6

102 0 100 Tj (oC) 200

0.4 0 10 VR (V) 20

(1) VR = 75 V; typical values. (2) VR = 20 V; typical values.

f = 1 MHz; Tj = 25 C.

Fig.5

Reverse current as a function of junction temperature.

Fig.6

Diode capacitance as a function of reverse voltage; typical values.

1996 Sep 03

Philips Semiconductors

Product specication

High-speed diodes

1N4148; 1N4446; 1N4448

handbook, full pagewidth

tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90%

tp t

RS = 50 V = VR I F x R S

IF

IF

t rr t

(1)

MGA881

input signal

output signal

(1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

1 k

450

I 90%

R S = 50

D.U.T.

OSCILLOSCOPE R i = 50 10%
MGA882

V fr

t tr tp

input signal

output signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Sep 03

Philips Semiconductors

Product specication

High-speed diodes
PACKAGE OUTLINE

1N4148; 1N4446; 1N4448

andbook, full pagewidth

0.56 max 1.85 max 25.4 min 4.25 max 25.4 min
MLA428 - 1

Dimensions in mm.

Fig.9 SOD27 (DO-35).

DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

1996 Sep 03