Laboratory Activity 2: FET I: Transfer Curve of JFET

Co, Jomelson Barbaso, Vanz BS Computer Engineering Ateneo de Manila University Loyola Heights, Quezon City
I. OBJECTIVES The goal of the experiment is to study the characteristics of field effect transistors. II. INTRODUCTION JFET can be used as an electronically-controlled switch or as a voltage-controlled resistance. JFET operation is like that of a garden hose. The flow of water through a hose can be controlled by squeezing it to reduce the cross section; the flow of electric charge through a JFET is controlled by constricting the current-carrying channel. The current also depends on the electric field between source and drain (analogous to the difference in pressure on either end of the hose).[1] This laboratory exercise aims to show the relationship between the amount of flow of water (ID) and the strength of squeezing the hose (VGS) by changing the value of the VGS through changing the resistance R1. Refer to the circuit below:

From resistors 0-3k, LTSpice were used, as doing them in the laboratory yields a drain current value of 0 A, we presumed that the current is just too small for the oscilloscope to detect, therefore we used LTSPice to make a more accurate reading. Changing the value of -15 volts to 15 was therefore implemented.
IV. RESULTS & DISCUSSION Current drain current and gate-source voltage (VGS) were recorded below:

R 0 100 500 1K 3K 5K 10K 20K 30K 50K

ID 0A 2nA 56nA 0.2uA 1.9uA 5uA 18.6uA 62.5uA 120uA 250uA

VGS 0V 15mV 74.6mV 148.5mV 436.9mV 714.286mV 1.3636V 2.5V 3.4615V 5V

The data table shows that as resistor value is increases, ID also increases. However, take note that, it is not the resistor itself that affects I D but VGS. It can be seen that as you increase VGS, ID also increases. Theoretically, the relationship between ID and VGS is given by the equation:
III. METHODOLOGY

The lab manual circuit used a potentiometer in changing the resistance, however, using potentiometers in the experiment has proven that its output resistance fluctuates too much, the experiment requires that it must measure the characteristics of the JFET one value of resistance at a time. Therefore, individual resistors are used instead of a potentiometer. The lab manual also specifies that V1 should be -15 volts, however, results have shown that whatever the value of the resistor, ID is always 0.

ID = KN(VGS - VTN)2

Eq. 1

Since KN and VTN of the transistor used in the experiment are unknown, it is not possible to compare theoretical and experimental values.
V. CONCLUSION AND RECOMMENDATION

In conclusion, the paper was able to ascertain that increasing VGS also increases ID. Their exact relationship

however are given in the equation given in the section preceding this. Although the lab manual explicitly said that three types of JFET transistors are to be used in the experiment, this paper has unable to examine two other transistors because there was no transistor available at the time of the experiment. It is therefore is recommended that other type of JFET transistors be used if the same experiment be done again. The paper was also unable to compare theoretical and experimental values since KN and VTN were unknown. It is recommended next time that this constants be sought out. Another laboratory exercise should also be done, where it would show to the students how the equation given in the section preceding this were derived. References: [1] http://en.wikipedia.org/wiki/JFET