MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N3905/D

General Purpose Transistors

PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER

2N3905 2N3906*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 60C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD PD TJ, Tstg Value 40 40 5.0 200 625 5.0 250 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C mW Watts mW/C C

CASE 2904, STYLE 1 TO92 (TO226AA)

THERMAL CHARACTERISTICS(1)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 40 5.0 50 50 Vdc Vdc Vdc nAdc nAdc

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola SmallSignal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996

2N3905 2N3906
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.25 0.4 Vdc 30 60 40 80 50 100 30 60 15 30 150 300 Vdc

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3905 2N3906 hre 2N3905 2N3906 hfe 2N3905 2N3906 hoe 2N3905 2N3906 NF 2N3905 2N3906 5.0 4.0 1.0 3.0 40 60 dB 50 100 200 400 0.1 0.1 5.0 10 fT 2N3905 2N3906 Cobo Cibo hie 0.5 2.0 8.0 12 X 10 4 200 250 4.5 10.0 pF pF k MHz

mmhos

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAd ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, , , IC = 10 mAdc, IB1 = 1.0 mAdc) 2N3905 2N3906 2N3905 2N3906 td tr ts tf 35 35 200 225 60 75 ns ns ns

Fall Time

ns

1. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3905 2N3906
3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 1N916 CS < 4 pF* 10 k < 1 ns 275 3V

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 3.0 2.0 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10

QT QA

1.0 0.1

0.2 0.3

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS)

20 30 40

1.0

2.0 3.0

5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)

200

Figure 3. Capacitance
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200

Figure 4. Charge Data

VCC = 40 V IB1 = IB2 IC/IB = 20

t f , FALL TIME (ns)

100 70 50 30 20 10 7 5 IC/IB = 10

TIME (ns)

tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn On Time

Figure 6. Fall Time

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3905 2N3906
TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA IC = 1.0 mA

NF, NOISE FIGURE (dB)

4.0

3.0

2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100

1.0

0 0.1

0.1

0.2

0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS)

40

100

Figure 7.

Figure 8.

h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20

h fe , DC CURRENT GAIN

200

100 70 50

10 7

30

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 9. Current Gain

20 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0

Figure 10. Output Admittance

1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 11. Input Impedance

Figure 12. Voltage Feedback Ratio

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3905 2N3906
TYPICAL STATIC CHARACTERISTICS
2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1.0 V

h FE, DC CURRENT GAIN (NORMALIZED)

0.1 0.1

0.2

0.3

0.5

0.7

1.0

2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)

20

30

50

70

100

200

Figure 13. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0 0.01

0.02

0.03

0.05

0.07

0.1

0.2 0.3 0.5 IB, BASE CURRENT (mA)

0.7

1.0

2.0

3.0

5.0

7.0

10

Figure 14. Collector Saturation Region

1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 1.0 0.5 0 0.5 +25C TO +125C 1.0 55C TO +25C 1.5 2.0

q V , TEMPERATURE COEFFICIENTS (mV/ C)

qVC FOR VCE(sat)

+25C TO +125C

0.6

55C TO +25C

0.4 VCE(sat) @ IC/IB = 10

0.2

qVB FOR VBE(sat)

1.0

2.0

50 5.0 10 20 IC, COLLECTOR CURRENT (mA)

100

200

20

40

60 80 100 120 140 IC, COLLECTOR CURRENT (mA)

160

180 200

Figure 15. ON Voltages

Figure 16. Temperature Coefficients

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3905 2N3906
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43

A R P
SEATING PLANE

L K D

X X G H V
1

C N N

SECTION XX

DIM A B C D F G H J K L N P R V

CASE 02904 (TO226AA) ISSUE AD

STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 18004412447 or 6023035454 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE 6022446609 INTERNET: http://DesignNET.com

JAPAN: Nippon Motorola Ltd.; TatsumiSPDJLDC, 6F SeibuButsuryuCenter, 3142 Tatsumi KotoKu, Tokyo 135, Japan. 038135218315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298

2N3905/D Motorola SmallSignal Transistors, FETs and Diodes Device Data