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BSS 84 P

BSS 84 P

SIPMOS Small-Signal-Transistor

Feature

P-Channel

Enhancement mode Logic Level

Avalanche rated

dv/dt rated

mode Logic Level Avalanche rated d v /d t rated P r o d u c

Product Summary

V -60 V DS R 8 DS(on) I -0.17 A D PG-SOT-23 3 2 1
V
-60
V
DS
R
8
DS(on)
I
-0.17
A
D
PG-SOT-23
3
2
1 VPS05161

Type

Package

Ordering Code

Marking

BSS84P - E6327

PG-SOT-23

Q67041-S1417

YBs

BSS84P - L6327

PG-SOT-23

SP000082879

YBs

Drain pin 3 Gate pin1 Source pin 2
Drain
pin 3
Gate
pin1
Source
pin 2

Maximum Ratings, at T A = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

I

D

 

A

T

A

=25°C

-0.17

T

A

=70°C

-0.14

Pulsed drain current

I

D puls

-0.68

A =25°C

T

Avalanche energy, single pulse

E

AS

2.6

mJ

I D =-0.17 A , V DD =-25V, R GS =25

Avalanche energy, periodic limited by T jmax

E

AR

0.036

Reverse diode dv/dt

dv/dt

-6

kV/µs

I S =-0.17A, V DS =-48V, di/dt=-200A/µs, T jmax =150°C

Gate source voltage

V

GS

±20

V

Power dissipation

P

tot

0.36

W

A =25°C

T

Operating and storage temperature

j , T stg

T

-55

+150

°C

IEC climatic category; DIN IEC 68-1

 

55/150/56

 
BSS 84 P

BSS 84 P

Thermal Characteristics

Parameter

Symbol

 

Values

Unit

min.

typ.

max.

Characteristics

Thermal resistance, junction - soldering point (Pin 3)

R

thJS

-

-

200

K/W

SMD version, device on PCB:

R

thJA

     

@ min. footprint

-

-

350

@ 6 cm 2 cooling area 1)

-

-

300

Electrical Characteristics, at T A = 25 °C, unless otherwise specified

 

Parameter

Symbol

 

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

V

(BR)DSS

-60

-

-

V

GS =0, I D =-250µA

V

Gate threshold voltage, V GS = V DS

V

GS(th)

-1

-1.5

-2

I

D =-20µA

Zero gate voltage drain current

I DSS

     

µA

DS =-60V, V GS =0, T A =25°C

V

-

-0.1

-1

DS =-60V, V GS =0, T A =125°C

V

-

-10

-100

Gate-source leakage current

I GSS

-

-10

-100

nA

GS =-20V, V DS =0

V

Drain-source on-state resistance

R

DS(on)

-

8

12

GS =-4.5V, I D =-0.14A

V

Drain-source on-state resistance

R

DS(on)

-

5.8

8

GS =-10V, I D =-0.17A

V

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

BSS 84 P

BSS 84 P

Electrical Characteristics, at T A = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

 

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

g

fs

DS 2*I D *R DS(on)max ,

V

I D =-0.14A

0.065

0.13

-

S

Input capacitance

C

iss

GS =0, V DS =-25V,

V

-

15

19

pF

Output capacitance

C

oss

f=1MHz

-

6

8

Reverse transfer capacitance

C

rss

-

2

3

Turn-on delay time

t

d(on)

DD =-30V, V GS =-4.5V,

V

-

6.7

10

ns

Rise time

t

r

I D =-0.14A, R G =25

-

16.2

24.3

Turn-off delay time

t

d(off)

-

8.6

12.9

Fall time

t

f

-

20.5

30.8

Gate Charge Characteristics

Gate to source charge

Q

gs

DD =-48V, I D =-0.17A

V

-

0.25

0.37

nC

Gate to drain charge

Q

gd

-

0.3

0.45

Gate charge total

Q

g

DD =-48V, I D =-0.17A,

V

V

GS =0 to -10V

-

1

1.5

Gate plateau voltage

V(plateau)

DD =-48V, I D =-0.17A

V

-

-3.42

-

V

Reverse Diode

Inverse diode continuous forward current

I

S

A =25°C

T

-

 

- -0.17

A

Inv. diode direct current, pulsed I SM

 

-

 

- -0.68

Inverse diode forward voltage

V

SD

GS =0, I F =-0.17A

V

-

-0.93

-1.24

V

Reverse recovery time

t

rr

R =-30V, I F =l S ,

V

-

23

34

ns

Reverse recovery charge

Q

rr

di

F /dt=100A/µs

-

10

15

nC

BSS 84 P

BSS 84 P

1 Power dissipation

P tot = f (T A )

BSS 84 P

0.38 W 0.32 0.28 0.24 0.2 0.16 0.12 0.08 0.04 0 0 20 40 60
0.38
W
0.32
0.28
0.24
0.2
0.16
0.12
0.08
0.04
0
0
20
40
60
80
100
120
°C
160
T A
P tot

3 Safe operating area

I D = f ( V DS )

parameter : D = 0 , T A = 25 °C

1 BSS 84 P -10 A 0 -10 t p = 170.0µs 1 ms -1
1
BSS 84 P
-10
A
0
-10
t p = 170.0µs
1
ms
-1
-10
10 ms
-2
-10
DC
-3
-10
-10 -1
-10 0
-10 1
V
-10 2
V DS
R
= V
/ I
DS(on)
DS
D
I D

2 Drain current

I D = f (T A )

parameter: V GS 10 V

BSS 84 P

-0.18 A -0.14 -0.12 -0.1 -0.08 -0.06 -0.04 -0.02 0 0 20 40 60 80
-0.18
A
-0.14
-0.12
-0.1
-0.08
-0.06
-0.04
-0.02
0
0
20
40
60
80
100
120
°C
160
T
A
I D

4 Transient thermal impedance

Z thJA = f (t p ) parameter : D = t p /T

3 BSS 84 P 10 K/W 2 10 1 10 D = 0.50 0.20 0.10
3
BSS 84 P
10
K/W
2
10
1
10
D
= 0.50
0.20
0.10
0.05
0
10
single pulse
0.02
0.01
-1
10
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
10 2
s
10 4
t p
Z thJA
BSS 84 P

BSS 84 P

5 Typ. output characteristic

I D = f (V DS )

parameter: T j = 25 °C

-0.4 BSS 84 P P tot = 0.36W A l j k i h V
-0.4 BSS 84 P
P tot = 0.36W
A
l
j
k
i
h
V GS [V]
g
a
-2.5
-0.32
b
-3.0
f
c
-3.5
-0.28
d
-4.0
e
e
-4.5
-0.24
f
-5.0
d
g
-5.5
-0.2
h
-6.0
i
-6.5
-0.16
c
j
-7.0
k
-8.0
-0.12
l
-10.0
b
-0.08
-0.04
a
0
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
V
-5
V DS
I D

7 Typ. transfer characteristics

I D = f ( V GS ); |V DS | 2 x |I D | x R DS(on)max

parameter: T j = 25 °C

0.4 A 0.3 0.25 0.2 0.15 0.1 0.05 0 0 1 2 3 4 V
0.4
A
0.3
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
V
6
- I D

- V GS - V GS

6 Typ. drain-source on resistance

R DS(on) = f (I D )

parameter: V GS ; T j = 25 °C

BSS 84 P 26 a b c d e f g 22 20 18 16
BSS 84 P
26
a
b
c
d
e
f
g
22
20
18
16
14
12
10
h
i
8
j
k
6
l
4
V GS [V] =
a
b
c
d
e
f
g
h
i
j
k
l
2
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-8.0
-10.0
0
0
-0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32A -0.38
I D
R DS(on)

8 Typ. forward transconductance

g fs = f(I D )

parameter: T j = 25 °C

0.16 S 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.04 0.08 0.12 0.16 A
0.16
S
0.12
0.1
0.08
0.06
0.04
0.02
0
0
0.04
0.08
0.12
0.16
A
0.22
g fs

-I D I D

BSS 84 P

BSS 84 P

9 Drain-source on-state resistance

R DS(on) = f (T j

)

parameter : I D = -0.17 A, V GS = -10 V

BSS 84 P 21 18 16 14 12 10 98% 8 6 typ 4 2
BSS 84 P
21
18
16
14
12
10
98%
8
6
typ
4
2
0
-60
-20
20
60
100
°C
180
R DS(on)

6 typ 4 2 0 -60 -20 20 60 100 °C 180 R DS(on) T A

T A

11 Typ. capacitances

C = f (V DS )

parameter: V GS =0, f=1 MHz

2 10 pF Ciss Coss 1 10 Crss 0 10 0 5 10 V 20
2
10
pF
Ciss
Coss
1
10
Crss
0
10
0
5
10
V
20
C

- V DS - V DS

10 Typ. gate threshold voltage

V GS(th) = f (T j parameter: V GS = V DS

)

2.4 V 98% 2 1.8 1.6 typ. 1.4 1.2 2% 1 0.8 0.6 0.4 -60
2.4
V
98%
2
1.8
1.6
typ.
1.4
1.2
2%
1
0.8
0.6
0.4
-60
-20
20
60
100
°C
160
-
V GS(th)

0.8 0.6 0.4 -60 -20 20 60 100 °C 160 - V GS(th) T A 12

T A

12 Forward character. of reverse diode

I F = f (V SD )

parameter: T j , tp = 80 µs

0 BSS 84 P -10 A -1 -10 -2 -10 T = 25 °C typ
0
BSS 84 P
-10
A
-1
-10
-2
-10
T
= 25
°C
typ
j
T
= 150 °C typ
j
T
= 25
°C
(98%)
j
T
= 150 °C (98%)
j
-3
-10
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
V
-3
V SD
I F
BSS 84 P

BSS 84 P

13 Typ. avalanche energy

E AS = f (T A ), parameter:

I D = -0.17 A , V DD = -25 V, R GS = 25
I D = -0.17 A
, V DD = -25 V, R GS = 25
3
mJ
2
1.5
1
0.5
0
25
45
65
85
105
125
°C
165
E AS

T A A

15 Drain-source breakdown voltage

V (BR)DSS = f (T A )

BSS 84 P

-72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
-60
-20
20
60
100
°C
180
V (BR)DSS

T A T A

14 Typ. gate charge

V GS = f (Q Gate ) parameter: I D = -0.17 A pulsed; T j = 25 °C

BSS 84 P

-16 V -12 -10 0,2 V DS max 0,8 V DS max -8 -6 -4
-16
V
-12
-10
0,2 V
DS max
0,8 V DS
max
-8
-6
-4
-2
0
0
0.2
0.4
0.6
0.8
1
1.2 nC
1.5
Q Gate
V GS
BSS 84 P

BSS 84 P

Published by Infineon Technologies AG , Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved.

Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics.

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