School of Advanced Sciences Model Term End Examination Question Paper Subject: Materials Science Time: 3 hours Subject

Code: PHY102 Maximum Marks: 100

Part-A (85=40 Marks) Answer any 8 questions 1. Describe the success of quantum free electron theory based on its predictions of electronic specific heat, resistivity and conductivity in conductors. 2. Assuming that a current density of 104 A m-2 flows through a metal and the relaxation time to be 1013 sec, calculate the electric field to drive this current. What is the average drift velocity of the electrons? Take conduction electron concentration to be 1029 m-3. 3. All the donor impurities in an n-type semiconductor are ionized at 200 K. If the conductivity at 300 K is 26 -1 m1, find the conductivity at 200 K. Mobility of electrons at 200 K and 300 K are respectively 0.39 and 0.41 m2 V1 s1. 4. Distinguish between direct and indirect bandgap semiconductors. 5. In a magnetic hard disk, explain the steps involved in the process of reading and writing with a sketch. 6. Describe the principle of operation of SQUID. 7. Using the local field equation in a dielectric, arrive at the Clausius-Mosotti equation. What is the importance of this equation? 8. What is dielectric loss? Explain it with the help of a V-I plot. 9. What is phase velocity? Get an expression for it for an electromagnetic wave in a homogeneous medium. 10. Show that the Poynting vector for an electromagnetic wave in an isotropic medium is

S v 2 0 r E B . What is its importance?

Part-B (512=60 Marks) Answer all questions 11 (a) (i) With a neat sketch explain the process of heat conduction in a conductor and obtain an expression for thermal conductivity. (ii) The relaxation time of conduction electron in copper is 1014 s. Find the thermal conductivity of copper at 27 C, using quantum mechanical expressions. Assume concentration of conduction electrons to be 1029 m-3. OR (b) Using the general expression for concentration of electrons in conduction band, for an ntype semiconductor, (i) obtain an expression for the Fermi level as a function of temperature. Plot your result for two different concentrations. (ii) obtain an expression for the majority carrier concentration. 12 (a) With a B-H or M-H curve for a polycrystalline ferromagnetic material that was initially unmagnetized, describe in detail the process of hysteresis. OR (b) Write the properties of dia, para and ferromagnetic materials, four for each type. 13 (a) With necessary examples, describe electronic, ionic and orientation polarization mechanisms and derive an expression for the electronic and orientational polarizabilities. OR (b) Based on the Lorentz approach, show that the local electric field in a dielectric is (8) (4) (3) (9)

EL E

P . 3 0

14 (a) Describe the process of absorption in metals, semiconductors and insulators. OR (b) (i) With a relevant graph, explain the frequency dependence of dielectric constant for various polarization mechanisms. How will dielectric constant vary with temperature? (ii) The polarizability of NH3 molecule is 2.5 1039 and 2 1039 C2 m N-1 at 300 and 450 K respectively. Calculate the dipole moment. 2 (4) (8)

15 (a) (i) What are group velocity and group index? Show that

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(6)

(ii) Assuming only electronic polarization exists, obtain an expression for the refractive index of a medium in terms of the wavelength of the electromagnetic radiation passing through it (dispersion relation). OR (b) (i) What is luminescence? Explain any two types of luminescence with relevant examples. (ii) What are colour centres? Explain with an example. (6) (6) (6)