BD239/A/B/C

BD239/A/B/C
Medium Power Linear and Switching Applications
Complement to BD240/A/B/C respectively

TO-220 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCEO Parameter Collector-Emitter Voltage : BD239 : BD239A : BD239B : BD239C Collector-Emitter Voltage : BD239 : BD239A : BD239B : BD239C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature

1.Base

Value 45 60 80 100 55 70 90 115 5 2 4 0.6 30 150 - 65 ~ 150

Units V V V V V V V V V A A A W C C

VCER

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC=25C unless otherwise noted

Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : BD239 : BD239A : BD239B : BD239C Collector Cut-off Current : BD239/A : BD239B/C ICES Collector Cut-off Current : BD239 : BD239A : BD239B : BD239C IEBO hFE VCE(sat) VBE(on) Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 0.2A VCE = 4V, IC = 1A 40 15 0.7 1.3 V V 0.2 0.2 0.2 0.2 1 mA mA mA mA mA VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.3 0.3 mA mA Test Condition IC = 30mA, IB = 0 Min. 45 60 80 100 Typ. Max. Units V V V V

ICEO

* Pulse Test: PW=350s, duty Cycle2.0% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000

BD239/A/B/C

Package Demensions

TO-220
9.90 0.20
1.30 0.10 2.80 0.10

4.50 0.20

(8.70) 3.60 0.10

(1.70)

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )

0.50 0.05

+0.10

2.40 0.20

10.00 0.20

Dimensions in Millimeters
2000 Fairchild Semiconductor International Rev. A, February 2000

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2000 Fairchild Semiconductor International

Rev. E