Вы находитесь на странице: 1из 7

DISCRETE SEMICONDUCTORS

DATA SHEET

BF908WR N-channel dual-gate MOS-FET


Preliminary specication File under Discrete Semiconductors, SC07 1995 Apr 25

Philips Semiconductors

Philips Semiconductors

Preliminary specication

N-channel dual-gate MOS-FET


FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise gure f = 1 MHz f = 800 MHz PARAMETER drain-source voltage CONDITIONS 36 2.4 20 MIN. 43 3.1 30 1.5 TYP.
Marking code: MD.

BF908WR
PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION

d
3 4

g2 g1

s,b
Top view
MAM198

Fig.1 Simplified outline (SOT343R) and symbol.

MAX. 12 40 300 150 50 4 45 2.5

UNIT V mA mW C mS pF fF dB

1995 Apr 25

Philips Semiconductors

Preliminary specication

N-channel dual-gate MOS-FET


LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID IG1 IG2 Ptot Tstg Tj Note 1. Device mounted on a printed-circuit board. PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation storage temperature operating junction temperature up to Tamb = 45 C; see Fig.2; note 1 CONDITIONS 65 MIN.

BF908WR

MAX. 12 40 10 10 300 +150 +150 V

UNIT mA mA mA mW C C

MLD154

handbook, halfpage

400

Ptot (mW) 300

200

100

0 0 50 100 150 200 Tamb ( oC)

Fig.2 Power derating curve.

1995 Apr 25

Philips Semiconductors

Preliminary specication

N-channel dual-gate MOS-FET


THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specied. SYMBOL V(BR)G1-SS V(BR)G2-SS V(P)G1-S V(P)G2-S IDSS IG1-SS IG2-SS PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage gate 1-source cut-off voltage gate 2-source cut-off voltage drain-source current gate 1 cut-off current gate 2 cut-off current CONDITIONS VG2-S = VDS = 0; IG1-S = 10 mA VG1-S = VDS = 0; IG2-S = 10 mA MIN. 8 8 TYP. 15 PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 Ts = 87 C; note 2

BF908WR

VALUE 350 210

UNIT K/W K/W

MAX. 20 20 2 1.5 27 50 50

UNIT V V V V mA nA nA

VG2-S = 4 V; VDS = 8 V; ID = 20 A VG1-S = 4 V; VDS = 8 V; ID = 20 A VG2-S = 4 V; VDS = 8 V; VG1-S = 0 VG2-S = VDS = 0; VG1-S = 5 V VG1-S = VDS = 0; VG2-S = 5 V 3

DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL yfs Cig1-s Cig2-s Cos Crs F PARAMETER forward transfer admittance input capacitance at gate 1 input capacitance at gate 2 drain-source capacitance reverse transfer capacitance noise gure f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 200 MHz; GS = 2 mS; BS = BSopt f = 800 MHz; GS = GSopt; BS = BSopt CONDITIONS pulsed; Tj = 25 C MIN. 36 2.4 1.2 1.2 20 TYP. 43 3.1 1.8 1.7 30 0.6 1.5 MAX. 50 4 2.5 2.2 45 1.2 2.5 UNIT mS pF pF pF fF dB dB

1995 Apr 25

Philips Semiconductors

Preliminary specication

N-channel dual-gate MOS-FET

BF908WR

handbook, halfpage

40

MRC281

ID (mA) 30

VG2-S = 4 V 3V 2V 1.5 V

handbook, halfpage

30

MRC282

ID (mA) 20

VG1-S = 0.3 V 0.2 V

0.1 V

20

1V 10

0V 0.1 V 0.2 V

10

0.5 V

0V 0 0.6 0 0.4 0.2 0 0.2 0.6 VG1-S (V) 0.4 0 4 8 12

0.3 V 16 VDS (V)

VDS = 8 V. Tj = 25 C.

VG2-S = 4 V. Tj = 25 C.

Fig.3 Transfer characteristics; typical values.

Fig.4 Output characteristics; typical values.

50 Yfs (mS) 40

MRC280

4V 3V 2V 1.5 V

60 Yfs (mS)

MRC276

40 30 1V

20 20 0.5 V 10 VG2-S = 0 V 0 0 0 5 10 15 20 25 I D (mA) 40 0 40 80 120 160 T j (o C)

VDS = 8 V. Tj = 25 C.

Fig.5

Forward transfer admittance as a function of drain current; typical values.

Fig.6

Forward transfer admittance as a function of junction temperature; typical values.

1995 Apr 25

Philips Semiconductors

Preliminary specication

N-channel dual-gate MOS-FET


PACKAGE OUTLINE

BF908WR

1.00 max 0.2 M A 0.2 M B 0.4 0.2 0.1 max 0.2 A

2.2 2.0

1.35 1.15

1
0.7 0.5 1.4 1.2 2.2 1.8 B

0.3 0.1 0.25 0.10

MSB367

Dimensions in mm.

Fig.7 SOT343R.

1995 Apr 25

Philips Semiconductors

Preliminary specication

N-channel dual-gate MOS-FET


DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values

BF908WR

This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1995 Apr 25