Академический Документы
Профессиональный Документы
Культура Документы
Product Specification
BUK854-800A
GENERAL DESCRIPTION
Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC converters, and in general purpose high frequency switching applications.
PINNING - TO220AB
PIN 1 2 3 tab gate collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE VCGR VGE IC IC ICLM ICM Ptot Tstg Tj PARAMETER Collector-emitter voltage Collector-gate voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector Current (Clamped Inductive Load) Collector current (pulsed peak value, on-state) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGE = 20 k Tmb = 25 C Tmb = 100 C Tj Tjmax. VCL 500 V Tj Tjmax. Tmb = 25 C MIN. -5 - 55 MAX. 800 800 30 12 6 20 30 85 150 150 UNIT V V V A A A A W C C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS In free air TYP. 60 MAX. 1.47 UNIT K/W K/W
October 1994
Rev.1.100
Philips Semiconductors
Product Specification
BUK854-800A
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL V(BR)CES VGE(TO) ICES ICES IECS IGES VCEsat PARAMETER Collector-emitter breakdown voltage Gate threshold voltage Zero gate voltage collector current Zero gate voltage collector current Reverse collector current Gate emitter leakage current Collector-emitter saturation voltage CONDITIONS VGE = 0 V; IC = 0.25 mA VCE = VGE; IC = 1 mA VCE = 800 V; VGE = 0 V; Tj = 25 C VCE = 800 V; VGE = 0 V; Tj =125 C VCE = -5 V; VGE = 0 V VGE = 30 V; VCE = 0 V VGE = 15 V; IC = 6 A VGE = 15 V; IC = 12 A MIN. 800 3 TYP. 4 10 0.1 0.1 10 2.4 3.1 MAX. 5.5 100 1 5 100 3.5 UNIT V V A mA mA nA V V
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL gfe Cies Coes Cres td on tr Eon td off tf Eoff td on tr Eon td off tf Eoff PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-on Energy Loss Turn-off delay time Turn-off fall time Turn-off Energy Loss Turn-on delay time Turn-on rise time Turn-on Energy Loss Turn-off delay time Turn-off fall time Turn-off Energy Loss CONDITIONS VCE = 15 V; IC = 3 A VGE = 0 V; VCE = 25 V; f = 1 MHz MIN. 1.5 TYP. 4 400 45 15 20 30 0.25 170 200 0.25 20 30 0.25 200 400 0.5 MAX. 750 80 40 270 400 0.5 350 800 1 UNIT S pF pF pF ns ns mJ ns ns mJ ns ns mJ ns ns mJ
IC = 6 A; VCC = 500 V; VGE = 15 V; RG = 25; Tj = 25C; Inductive Load Energy Losses include all tail losses IC = 6 A; VCC = 500 V; VGE = 15 V; RG = 25; Tj = 125C; Inductive Load Energy Losses include all tail losses
October 1994
Rev.1.100
Philips Semiconductors
Product Specification
BUK854-800A
1E+01
30
D=
IC / A 20 15
BUK8Y4-800A 10
1E+00
20
1E-01
8 10
tp T t
1E-02
P D
tp
D=
7 VGE / V = 6 0
1E+01
1E-03 1E-07
10 VCE / V
15
20
30
10
0
0 20 40 60 80 100 Tmb / C 120 140
Tj / C = 25 150 3 5 2 4 VCEsat / V
100
30
ICLM
10
20
10
0 0 2 4 6 VGE / V 8 10 12
October 1994
Rev.1.100
Philips Semiconductors
Product Specification
BUK854-800A
8 7 6 5 4 3 2 1 0
gfe / S
BUK8Y4-800A
1000
C / pF
BUK854-800A
Cies
100
Coes
10
0 10 IC / A 20 30
Cres 0 10 20 VDS / V 30 40
Fig.10. Typical capacitances, Cies, Coes, Cres. C = f(VCE); conditions: VGE = 0 V; f = 1MHz.
dVCE/dt (V/ns)
BUK8Y4-800A
16 14 12 10 8 6 4 2 0
12 10 8 6 4 2 0
10
15 QG / nC
20
25
30
10 Rg / Ohm
100
1000
Fig.8. Typical turn-on gate-charge characteristics. VGE = f(QG); conditions: IC = 6 A; VCE = 500 V
t / ns BUK8Y4-800A
500
0.7 0.6
400
0.5
300
0.4
200
tf td(off)
E(on) E(off)
100
October 1994
Rev.1.100
Philips Semiconductors
Product Specification
BUK854-800A
10000
t / ns
BUK8Y4-800A
E(off) / mJ
BUK8Y4-800A
td(off) 1000 tf
1.5
100
0.5
Fig.16. Typical Energy loss at turn-off vs. RG conditions: IC = 6 A; VCL = 500 V; Tj = 125 C
E(off) / mJ BUK8Y4-800A
500
t / ns
BUK8Y4-800A
400
tf
1.5
VCL / V = 500
300
400 1 300
200
td(off)
100
0.5
0 0
0
5
IC / A 10
15
10 IC / A
15
20
Fig.17. Typical Energy loss at turn-off vs. IC conditions: VCL = 500 V; RG = 25 ; Tj = 125C; parameter VCL
I IC 90%
VCC = VCL
10% V
D.U.T. RG
VGE
IC measure
90% tc 10%
0V
0R1
October 1994
Rev.1.100
Philips Semiconductors
Product Specification
BUK854-800A
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
3,7 2,8
5,9 min
15,8 max
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,6 2,4
October 1994
Rev.1.100
Philips Semiconductors
Product Specification
BUK854-800A
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
October 1994
Rev.1.100
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.