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POWER MODULES

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Power modules

WIDE BAND A CLASS ULTRALINEAR


suitable for any type of modulation including AM TV and digital modulation

NARROW BAND C CLASS AND CW


for FM - CW ( AM - SSB ) and FM TV

FREQUENCY
from 5 MHz to 1,2 GHz

FREQUENCY
from 60 MHz to 1,9 GHz

POWER
AM-FM-CW-SSB etc. : 0,3 W - 1,5 W
-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

POWER
2 - 30 W

TV AM : +65 dBmV ( 1 TV channel ) or +44 dBmV ( 110 simultaneous channels )

SPECIFICATIONS
High linearity and dynamic with low noise Very flat gain on wide band High reverse insulation ( > 35 dB ) Mismatching protection Easy to use

SPECIFICATIONS
Wide availability by frequency, power supply and output power Very low consumption when it is in stand-by. Easy to use

POWER SUPPLY
24 V 200 - 400 mA

POWER SUPPLY
from 6V to 12V from 0,3A to 4A

APPLICATIONS
-- Instrumentation and laboratory thank to a high and flat gain -- TV amplification in AM and CATV -- For all modulation systems including digital modulations -- Driver for EMI measurements -- Low noise, suitable for very high dynamic RX front-ends, bidirectional amplifiers, TV micro repeaters, radios, tunnel repeaters etc..
R.F. elettronica di Rota F. www.rfmicrowave.it info@rfmicrowave.it

APPLICATIONS
-- They are the typical power modules used for vehicular and ground transmitters and transceivers -- FM TV amplification for long distance surveillance cameras

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POWER MODULES

pag E 2

The power modules are components suitable for RF signal amplification in order to achieve a high power level, the important feature is a moderate simultaneous wide bandwidth without any tuning which is up to 1000 MHz for the low power modules and 20 to 60 MHz for modules with higher power. It means that into this bandwidths the power module can work without any tuning due to the internal wide band matching circuits. They are precisely built to to ease the design work for radio equipments base stations, in fact to achieve a wide bandwidth and a high power is not always easy, they mainly solve the problem of tuning of power final stages because all these modules do not require any kind RF tuning.

wide band low power modules

narrow band high power modules

Thanks to a careful project, thick film technology and the use of high quality materials such as alumina substrates, high Q capacitors, coils on microstrip etc..., they have a high repeatability and reach a remarkable quality at reasonable prices. The use of power modules is made easier for the following characteristics: -- The input and the output impedance is already matched to 50 and dc block capacitors are already included, so no matching is required, the output pin can be directly connected to the antenna. -- The internal substrate with its transistor is safely secured to a small metal plate (which has to placed on a bigger heat sink) greatly easing the thermal dissipation. The implementation of these modules is very easy, just comply with 2 rules: -- Place and secure the module on a heat sink to properly dissipate heat using thermal paste too. -- Respect the most basic rules that all RF technicians know, for example, use bypass capacitors and chokes on the power supply pin, use only short leads on RF connections (input - output) and on bypass capacitors, dont cross over the RF output cable with the RF input cable, dont approach RF output cable to the input pin to avoid the risk of self oscillations, for the same reason avoid to put the output antenna too close to the module itself. No filter, RF matching circuit or tuning is necessary.

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POWER MODULES
Wide band ultra linear low power modules
The broadband power modules provide power from 0.3 to 1.5W for CW and FM emission modes and slightly less for AM and SSB. For emissions that require the use of ultralinear A Class, such as the TV in AM, the power changes depending on the number of TV channels, from about +65 dBmV per TV channel up to 44dBmV for 110 simultaneous channels (standard DIN -60dBc distortion) These modules are often used for laboratory applications, for example, to be driven by a simple RF generator, to provide a medium power, to measure EMI susceptibility or IMD, when it is required more power than that provided by our RF generator. Especially for 2-tone IMD measures, it is necessary that the 2 generators are very insulated to avoid returns and distortions of the generator itself, these broadband amplifiers typically have a reverse isolation > 35 dB. Other non laboratory applications are for example the construction of repeaters to serve small rural villages or mountain valleys that are not covered by the TV or radio service, or they are used for two-way amplifiers for radio or mobile phone services or for the distribution of radio coverage in tunnels. Another typical application is to amplify TV signals in AM, where the linearity and low intermodulation are important prerequisites. For example they can be used as the final stage to distribute the signal to switchboards or CATV. We conclude with the description of a very particular application, thanks to their high dynamic they are also very good low noise front-end amplifiers with an excellent intermodulation distortion against interfering signals associated to a noise figure of about 3.5 - 5 dB and IP3 dynamic between +40 and +46 dBm. The required power supply is 24V for all models with an absorption which ranges by module type form 200 to 400mA, being polarized in A class there is always absorption even in the absence of RF drive so the heat sink should be of appropriate size. Please note that these types of modules are less subject to damage in case of high VSWR output.

pag E 3

test p.c. board circuit example

Narrow band high power modules


The narrow-band power modules provide higher power (2 to 30 W), they are often used as final in transmitters, radio base stations, and transceivers either vehicular and portable. The power supply voltage depends on the model, usually from 6 to 9.6 V for lower power models and 12V for higher power models. These modules have also very often a pin for output power control, which can be connected directly to the power supply if you are not interested in its function. Almost all models are operating in C class (FM and CW) so the absorption is very low, 1 to 50 mA without a driver, this greatly reduce the size of the heat sink in those cases where the power transmission is not continuos. Models operating in linear AB class have always a stand-by current of about 50 - 100 mA.

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WIDE BAND power modules


WARNING: For "NORMAL" CW or FM applications the manufacturer rarely specifies the devices for power compression P1dB, this is the reason why we tested and characterized some modules for FM, CW, SSB etc.. applications. Below there are 2 tables of features, the first is for our tests and only for CW-FM-AM-SSB, and FM TV, the second table shows the original data from the manufacturer that are intended only for use in AM TV CATV or output levels with multi-carrier and IMD at -60dB by DIN rules

pag E 4

some measurements we made for FM - CW - SSB - AM - FMTV

Vcc = 24 V

model
3 MHz 5 MHz 10 MHz 20 MHz 50 MHz 100 MHz 200 MHz 400 MHz 450 MHz 500 MHz 800 MHz 900 MHz 1.1 GHz 1.2 GHz 1.3 GHz

CA 2256 R
850 mW 900 mW 950 mW 1W 1W 600 mW 500 mW

MHW 5222A
500 mW 600 mW 700 mW 950 mW 1W 1,05 W 1.1 W 1.1 W 800 mW 700 mW

BGD 802
700 mW 1W 1W 1.3 W

MHW 9242
350 mW 600 mW 600 mW 600 mW

2F3632
see next page

MC 7862
250 mW 650 mW 800 mW 900 mW

output

250 mW 300 mW 300 mW

power P1dB

2W 900 mW 600 mW

700 mW 350 mW 350 mW 200 mW

350 mW

950 mW

Gain dB lin
( at 13 V the gain is almost unchanged )

7 - 500 MHz 17 dB 1

300 mW 700 mW 300 mW 700 mW 300 mW 650 mW 300 mW 500 mW 150 mW 250 mW 20-900MHz 10-1300MHz 30-1200MHz 50-1000MHz 5 - 600 MHz 18.5dB 1 24dB 1,5 22dB 1 18dB 1.5 5-1000MHz 5-1400MHz 15-1250MHz 10-1300MHz 20.5dB 1 18 dB 2.5 18.5dB 1.5 24 dB 2.5 22 dB 2.5

low noise figure


( if compared to the considerable dynamic )

+ 24 V 3.5 dB < 200MHz 4.5 dB a 440 MHz + 24 V 230 mA 30,00

+ 24 V 5 - 7 dBNF + 13 V 4 - 6 dBNF + 24 V 400 mA 31,00

+ 24 V 5 - 6 dBNF + 13 V 5 - 6 dBNF + 24 V 320 mA 33,00

+ 13 / 24 V + 13 / 24 V 3 - 4 dBNF 6 - 7.5dBNF 20 - 1000 30 - 1400 MHz MHz + 24 V 240 mA 30,00 + 24 V 360 mA 28,50

power supply price each

-24V 200 mA
positive to ground

26,00

TV or CATV characteristics according to the manufacturers specifications


power supply V mA

freq.

gain dB

MHz 40 - 860 40 - 300 40 - 450 30 - 450

output level single channel - multi channel

cod.
highest output power BGD 802

price each 31,00 25,00


=MHW5222A

+ 24 + 24 + 24 - 24

410 200 220 200

+ 24 230 20 - 300

P1dB a 1 W 20-300 MHz - 24 220 20 - 300 17,5 0.5dB +63 dBmV - 24 220 20 - 300 17,5 0.5dB +63 dBmV

19 0.5dB +64 dBmV +44 dBmV / 129 ch 17 0.1dB +63,5 dBmV +50 dBmV / 32 ch 22 +45 dBmV / 60 ch 17 +63 dBmV +65 dBmV 22 0.5dB

positive to ground
it is th 50 version of the CA2840

BGY 55 BGY 87 CA 2256R CA 2842 CA 4200R CA 4250R MC 7862 MHW 5222A MHW 8185 MHW 9242 2F 3632

26,00 37,00 30,00 30,00 28,50 31,00


= BGD 802

positive to ground positive to ground


GaAs-FET technology low noise figure very wide band GaAs-FET technology

+ 24 + 24 + 24 + 24 + 24

355 210 400 320 220

18,5 1dB 22 0.2dB 40 - 860 19 40 -1000 24 1dB 45 - 870 23,5 0.5dB

50 - 860 40 - 450

+44 dBmV / 110 ch +46 dBmV / 53 ch +44 dBmV / 110 ch +63 dBmV +38 dBmV / 152 ch +63 dBmV +40 dBmV / 135 ch

+64 dBmV +64 dBmV

33,00 30,00

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continue Wide band power modules 5 - 1200 MHz

pag E 5

Demonstrating what is written on the previous page we show the full test performed on one of the linear modules proposed on this catalogue, it is interesting to note that the measurement of reverse insulation shows a value of about 38 dB over the entire band.

2F 3632 linear module , some laboratory test ( at 50 )

test IMD @ -60dB , out level 2 tones of +14 dBm

Track 1 = reverse insulation ~ 38 dB ( 20 dB / div. ) Track 2 = Input return loss ~ 12 dB ( 10 dB / div. ) Track 4 = Output return loss ~ 12 dB ( 10 dB / div. )

Noise Figure + Gain 10 - 100 MHz

Noise Figure + Gain 10 - 1.500 MHz

Finally, as driver stage of these wide band modules, some ICs are available, always wide band, such as Philips modules OM series, the Motorola ICs MWA series or HP-Avantek GPD - GPO UTO (see F section MMIC)

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WIDE BAND amplifiers up to 2,5 GHz

pag E 6

This page groups several examples of wide or very wide band amplifier stages with a moderate output power. The examples could be useful as inspiration or idea for other projects, it is easy to understand that the possible combinations are many more than those shown here. The output power is intended to be P1dB (except the TV A Class), the band width is at -2 dB. Additional specifications are shown on the page regarding the single device, e.g. CLY10 on GaAsFETs pages, BGD802 on the previous pages of this section, MMICs in the next section F MMICs, etc..

version

this column shows the simultaneous band width this column shows the min and max operating frequency min max device power gain

below 1 GHz

0.6 W 0.9 - 1.3W 0.6 W

18 dB 18 dB
depending on MMIC as 1st stage

5 - 900 MHz 10 - 800 MHz 5 - 900 MHz 10 - 800 MHz 5 - 900 MHz 10 - 800 MHz
up to 1.300 MHz

0.9 - 1.3W from 24 to 30 dBG 21 dBG 350 - 600 mW 24 dBG


--24 dBG

TV I.C. OM up to band various power I.C. 61.5 dBmV A class types various at -60dB ultraor types IMD linear MMIC e.g.
MAALSS 0034 BGD802

from 30 to 40 dB depending on the used types

1 - 5 TV band 40 - 860 MHz

200 - 300 mW 1W 1.3 W 500 2600 MHz 1W 1.2 W 1.6 W 60 mW 50 mW 200 - 300 mW

20 dBG
wide band 28 dBG narrow band 30 dBG wide band 18 dBG

1.5 - 2.5
GHz

600 MHz 600 MHz 300 MHz

1.5 - 2.5
GHz

20 dBG > 20 dBG 14-17 wide band


narrow band dBG

fino 2.3 GHz 1.4 - 1.7 GHz +/- 2.4 GHz 200 - 500 MHz +/- 1.3 GHz 100 - 2500 MHz
see description ahead

23 dBG 25 dBG

total band up to 2.6 GHz 1.5 - 2.5


GHz

600 MHz

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POWER AMPLIFIER MODULES

pag E 7

These modules provide medium-high RF power trough a discrete frequency band, they are already matched to an inout impedance of 50 . It is possible to use the control pin to obtain a variation of output power, this pin is available on almost all models, or it is possible to act on the power supply of the first stage. Unless for special types they are all suitable to amplify CW or FM or FM TV signals. The two columns of frequency indicate: the first an optimal frequency with its maximum available power and the second the frequency to use the device at a reduced power.

Example of connection and internal diagram of a power module

center frequency MHz W 12.5 132 - 156 20


V 12.5 12.5 12.5 12.5

max frequency MHz W 127 - 160 16 140 - 180 130 - 180 60 - 95 140 - 178 60 - 95 125 - 163 16 10 22 20 1,8 1,8

P. in mW 150 150 150 150 300 30 30

VHF 60 - 190 MHz

cod.
BGY 35 Ph BGY 36 Ph BGY 136 Ph BGY 43 Ph BGY 45A Ph BGY 45B - 145B BGY 93A Ph BGY 93B Ph
Ph Ph

price each on request 41,50 29,50 --42,00 27,00 22,00


price each
1 pc =12,00 3 pcs =11,00 10pcs =10,00

144 - 174 140 - 175 68 - 88 144 - 174 68 - 88 132 - 156 140 - 180 68 - 88 144 - 175 150 - 175 144 - 175 150 - 175 118 - 137 150 - 170

20 13 30 28 2 2

see BGY 145A

V H F
60 190
MHz

9,6 9,6 9,6


12.5 12.5 12.5 see note

Ideal for medium power , it is driven with only 30mW 4-5 BGY 94C by a common wide band low cost MMIC 29 20 30 7 7 10 14 60 - 98 135 - 180 140 - 180 136 - 180 140 - 190 15 15 25 5.5 6
short case 150 long case short case 250 long case

BGY 145A MHW 612 MHW 612A MHW 613 MHW 613A M 57732 M 67710 H M 68721

Mot Mot Mot Mot


Mits Mits Mits

on request 32,00
not available

on request 29,00 38,00 39,00 on request 29,00 25,00 25,00 25,00


not available

20 50 20

7 to 13 V power supply
Mos Fet linear class, also for AM modulation

9.6
12.5 12.5

140 - 180 12 200 135 - 150 MHz 3W for : SSB - FM - AM 144 - 165 MHz 3W 160 - 175 MHz 3W etc. linear class 7.5 V - 150 mW input

125 - 155 MHz 2.5 W 140 - 175 MHz 2.5 W 150 - 180 MHz 2.5 W

S-AV 10H Tosh S-AV 13L Tosh S-AV 13H Tosh S-AV 13VH Tosh S-AV 23
Tosh

= SAV13.

continue on the next page

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POWER AMPLIFIER MODULES


p. s. center frequency V MHz W 12.5 12.5

pag E 8
P. in mW
150 50

420 - 470 440 - 470 400 - 470


410 - 470

20 15 2.2 3.5
2.2 3.2

max frequency MHz W 400 - 490 15 425 - 480 385 - 480


400 - 500

UHF 380 - 510 MHz

cod.
BGY 32D BGY 41B BGY 47A
Ph

price each
on request 1 pc =30,00 Ph 3 pcs =28,00 Ph Ph Ph Ph Ph Ph Ph

30-50 broad band

13 1.8 3
2 2.9

7.6 9.6 7.6 9.6 9.6


12.5

22,50 22,50 19,00


on request on request

these devices are similar


50 35 150 1 1 40-50

BGY 47E BGY 48B BGY 49A BGY 91B BGY 113A BGY 113B

430 - 470 400 - 440 400 - 440 430 - 470 380 - 450

5 20 7 7 1.5

410 - 480 390 - 450 390 - 450 420 - 480 360 - 465

4 15 5 5 1

7.5 7.5 7.5

22,00 22,00
price each 1 pc =11,00 3 pcs = 10,20 10 pcs = 9,50

MHW 401-1
ideal for low power UHF bandwidth, it is very wide band 360 MHz to 465 MHz
7.5 6
Mot

U H F

430 - 475 440 - 470

1.5 3

420 - 485 420 - 490

1.3 2,5

35 1

MHW 401-2 Mot

on request

prezzi cad.

ideal for UHF low power, it is driven with only 1 mW, for example directly from a VCO, a mixer, a common MMIC, a plastic transistors and even by a RF generator.
12.5 12.5 12.5 12.5 12.5

MHW 704

400 - 440 430 - 470 400 - 440 430 - 470 430 - 470

7.5 13 20 20 20

390 - 450 420 - 480 390 - 445 420 - 480 420 - 480

6 10 15 15 15

100 100 100 100 100

330
12.5

510

380 - 400 430 - 450

13 30

370 - 410

10

200 300

12.5 7.2 9.6

replaceable and pin compatible with M 68762L

MHz 12.5

450 - 470 30 440 - 480 25 300 470 - 512 7 455 - 525 5.5 50 390 - 440 7 380 - 450 6 10-20 ideal for UHF medium power, it is driven with a few mW, for example if you have only 1 mW it is possible to drive it for the maximum power by a simple MAV11 or AG-102 MMIC. 9.6 470 - 512 20 7 460 - 520 6 12.5 430 - 470 10 high gain, only 10mW driver 15 410 - 480 10
12.5

1 pz =11,00 3 pz = 10,20 10 pz = 9,50 MHW 709 - 1 Mot on request MHW 710 - 2 Mot on request 49,00 MHW 720-A1 Mot MHW 720 - 2 Mot on request 47,00 MHW 720-A2 Mot MX 7.5-1 Trw MX 7.5-3 Trw on request MX 20-1 Trw MX 20-3 Trw on request M 57704 UL Mits see M 57729 M 68762L 75,00 M 57729 H Mits 35,00 M 57786 H Mits Mot
price each

M 67705 L
Mits

1 pc =19,70 4 pcs =18,70 10pcs=17,70

M 67705 H Mits M 67709 Mits M 67729 H2


Mits

46,00 47,00
price each 1 pc =33,00 4 pcs =30,00 10pcs=27,50

440 - 460

25

430 - 465

20

150 high gain

9,6 7.2 12.5 7.5 7.5

430 - 470 330 - 380 400 - 450 390 - 440 440 - 480

7 7 30 3 3

410 - 480 390 - 460 370 - 450 420 - 490

5,5 20 2.5 2.5

20 50 300 100 100

with MosFets, linear class suitable for AM and SSB with MosFets linear class suitable for AM and SSB

M 67799 HA Mits M 68732 SL Mits M 68762 L Mits S-AU10L


Tosh ( = SAU35 )

37,00 32,50 75,00 25,00 26,00

S-AU 10H
Tosh ( = SAU35 )

continue on the next page

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POWER AMPLIFIER MODULES


p. s. center frequency max frequency V MHz W MHz W 3.5

pag E 9

P. in mW
1 1 1 1

UHF > 750 MHz

cod.
BGY 240 S Ph MHW 807-2 Mot

price each
1-4 pcs 7,00 5-10 pcs 6,40

870 - 950

2 6 7

850 - 1000 850 - 930 840 - 915 830 - 920

1 5 5 3

12.5 870 - 905 12.5 860 - 910

24,00
special offer price each

U H F
750

it is driven with only 1 mW directly from a VCO, a mixer, a common MMIC, a plastic transistors and even by a RF generator.

M 67717
Mits

1-4 pcs 12,00 5-10 pcs 11,00 11 + pcs 9,80

see description and test below


12.5 800 - 840 12.5 890 - 915

6 780 - 860 6 880 - 930 850 - 950 1.5 800-1000


+ +

5 5 1

1 2 1

M 67752 Mits with MosFets , similar to PF 0031 PF 0011 (=0031)


Dual band , it is double amplifier PF 08109 B 900 + 1700 MHz
L-D Mos Fet , with bias at 160 mA in XHW 910 Mot AB linear class with an internal ( = MHW 910 ) stable bias network.

3.5

MHz

1650-1750

1600-1800 0.8 6
50

21,00 24,00 1 - 3 pcs 7,00 4 -9 pcs 6,40 10-29pcs 5,70 32,00


1-4 pcs 6,50 5-10 pcs 5,90 11 + pcs 5,50

1100 24 910 - 1000 10 890 - 1025

5.8 900 - 1050 1.1 750 - 1100 0.8 4.7 4.8

1.5

850 - 950 1.1 750 - 1000 0.8 870 - 915 1.2 850 - 930 1 1 850 - 930 820 - 980 1 0.7

5 1.5 5 0.12

these modules are suitable as TX final stage for cellular, they are very small with gain > 24dB and input 1 to 5 mW

FA 01321 MGF7114C Mits

3.5 900 - 1050 3.5

880 - 1100 0.7

1-4 pcs 6,00 PF 0067 A 5-10 pcs 5,40 MC 7634 Nec 11 + pcs 4,90 Ph

as above but with very high gain BGY 241 it needs only -7 dBm (0,12 mW)

M 67717 900 MHz power module - 7 W , laboratory test

M 67717 output power with 1 mW input power Vcc +12.5 V Bias +8 V span 800 - 920 MHz

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POWER AMPLIFIER MODULES


p. s. center frequency V MHz W

pag E 10

max fequency MHz 1220-1320 W 12

P. in mW

> 1.1 GHz

cod.
M 57762 FMC 1616 L CAP-FMC1616 BGY 212 A
Mits

price each
1 - 4 pcs 63,00 5 + pcs 59,50

13

1240-1300 1530 - 1630

18 5

0.7- see on next page more 1W description 20

Fujitsu FMC1616L1015 linear class . For 1,3 GHz 1250 - 1350 4.5 1230 - 1380 3.5 20 band see bottom page 4 pcs of ATC 100A High Q capacitor 1.5 + 3 + 3 + 6.8 pF for FMC1616 modification on 1300 MHz as description 1450 - 1800 2.5
1

32,00 4,00
1 - 4 pcs 5,70 5 - 9 pcs 5,20 10-29pcs 4,70 1 - 3 pcs 7,00 4 -9 pcs 6,40 10-29 pcs 5,70

> 1.1

3.5 1600 - 1800 1.4 1500 - 1900 0.5

GHz 3.5

Dual band 850 - 950 1.5 800-1000 1 1 double amplifier + + PF 08109 B 900 + 1700 MHz 1650-1750 1 1600-1800 0.8 26 1750 - 1810 8 15 linear class 35,00 XHWE 5168 Mot 26 1800 - 1900 12 1750 - 1950 8 15 linear class 42,00 SHWE 5168 Mot 26 1800 - 1880 12 1750 - 1920 8 12 linear class 42,00 MHW 1815 Mot MHW 1815 module can be modified to decrease the frequency to 1.2 GHz and it works well with even 13V at reduced power, the plastic case is easily removable to direct access to its components, examples: 1.6 GHz by adding 3 capacitors, 16 W @ 26V --- 1.3 GHz by adding 7 capacitors, 20W @ 26V

FMC1616L1015 5W 1.6 GHz easy to modify for 1.3 GHz frequency band
ORIGINAL
RF INPUT : 10 - 30 mW +Vdc : +7 V , max +8V , max 2.5 A -V BIAS : -3.8 V , max -4V RF OUT : 1.530 - 1.630 MHz 4 - 5W ( Vdc +7V Bias -3.8V ) 1.450 - 1.800 MHz 2.5W with the bias voltage it is possible to adjust the quiescent current, increasing the negative bias reduces the quiescent current. The negative bias voltage can be easily obtained through a negative voltage generator such as the classic ICL7660, see I.C. stabilizers section G. It was born for applications on GLOBALSTAR band as linear class amplifier for satellite telephony .

Capacitors to add for matching at 1300 MHz

modification for 1300 MHz


Remove the cover with a simple screwdriver and add 4 "piggybacked" capacitors type ATC 100A to the original chip capacitors , one 1.5 pF , two 3 pF , one 6.8 pF.

RF OUT : 1.250 - 1.350 MHz 4-5W ( Vdc +7V , 2.5A Bias -3.8V ) 1.230 - 1.380 MHz 3.5W

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POWER AMPLIFIER MODULES

pag E 11

1300 MHz - 15W M57762 module


The M57762 module is a power amplifier in the 1220-1320 MHz band, the output power is about 18W in the middle (1240-1300 MHz), which drops to about 12-14W near limits (1220-1320 MHz). The drive power is about 0.7-1W to reach full working power. It is suitable for any type of modulation being a linear class module with a bias of +9V and 200mA. It doesnt need special matching because the input and output are already matched at 50 , as with all power modules it is better to pay particular attention on the decoupling of the 3 pins of power supply. In our example is shown with great care the way are mounted the bypass capacitors on the 3 pins of power supply that will have the leads as short as possible, as indicated in the picture it is particularly convenient to put them between the pin and the ground, using SMD components the leads are really short and the effectiveness of decoupling is very good. From our experience we can say that the success of a power amplifier circuit is very influenced by the goodness in decoupling DC power

The diagram also includes a driver circuit made of a broadband MMIC IC, MAAMSS0049 type is suitable to drive the power module when you have very small power. The gain of this driver circuit is about 14-15 dB with an output power of 700 mW that is really necessary for the proper driving of the power module.

fast home-made mounting prototype with driver circuit


Example of assembly including the driver circuit made with the MMIC MAAMSS0049 The circuits around the power module like driver and its +5V stabilizer were obtained from our Surplus product SU-02

This detail highlights the decoupling system using bypass capacitors placed between the leads of the 3 pins of power supply and the ground and adding the 17,5 H high current chokes in series with the power supply. This system of P greek filter is particularly recommended for an effective decoupling on power supply in presence of RF power, especially if there are more than one stage in the same box, to avoid self-oscillation, and RF feedbacks.

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POWER AMPLIFIER MODULES To ease the choice or a replacement, the modules below are shown in 1:1 scale

pag E 12

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