VISHAY

TLHG / O / P / R / Y420.
Vishay Semiconductors

High Efficiency LED, 3 mm Tinted Undiffused Package

Description
The TLH.42.. series was developed for standard applications like general indicating and lighting purposes. It is housed in a 3 mm tinted clear plastic package. The wide viewing angle of these devices provides a high on-off contrast. Several selection types with different luminous intensities are offered. All LEDs are categorized in luminous intensity groups. The green and yellow LEDs are categorized additionally in wavelength groups. That allows users to assemble LEDs with uniform appearance.

19220

e3 Pb
Pb-free

Applications
Status lights OFF / ON indicator Background illumination Readout lights Maintenance lights Legend light

Features
Choice of five bright colors Standard T-1 package Small mechanical tolerances Suitable for DC and high peak current Wide viewing angle Luminous intensity categorized Yellow and green color categorized Lead-free device

Parts Table
Part TLHR4200 TLHR4201 TLHR4205 TLHO4200 TLHO4201 TLHY4200 TLHY4201 TLHY4205 TLHG4200 TLHG4201 TLHG4205 TLHP4200 TLHP4201 Color, Luminous Intensity Red, IV > 4 mcd Red, IV > 6.3 mcd Red, IV > 10 mcd Soft orange, IV > 4 mcd Soft orange, IV > 10 mcd Yellow, IV > 4 mcd Yellow, IV > 6.3 mcd Yellow, IV > 10 mcd Green, IV > 6.3 mcd Green, IV > 10 mcd Green, IV > 16 mcd Pure green, IV > 2.5 mcd Pure green, IV > 6.3 mcd Angle of Half Intensity () 22 22 22 22 22 22 22 22 22 22 22 22 22 Technology GaAsP on GaP GaAsP on GaP GaAsP on GaP GaAsP on GaP GaAsP on GaP GaAsP on GaP GaAsP on GaP GaAsP on GaP GaP on GaP GaP on GaP GaP on GaP GaP on GaP GaP on GaP

Document Number 83005 Rev. 1.3, 31-Aug-04

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TLHG / O / P / R / Y420.
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified TLHR42.. ,TLHO42.. , TLHY42.. , TLHG42.. , TLHP42.. Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t 5 s, 2 mm from body tp 10 s Tamb 60 C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 30 1 100 100 - 40 to + 100 - 55 to + 100 260 400

VISHAY

Unit V mA A mW C C C C K/W

Optical and Electrical Characteristics

Tamb = 25 C, unless otherwise specified

Red
TLHR42.. Parameter Luminous intensity
1)

Test condition IF = 10 mA

Part TLHR4200 TLHR4201 TLHR4205

Symbol IV IV IV d p VF VR Cj

Min 4 6.3 10 612

Typ. 8 10 15

Max

Unit mcd mcd mcd

Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
1)

IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz

625 635 22 2 3

nm nm deg V V pF

15 50

in one Packing Unit IVmin/IVmax 0.5

Soft Orange
TLHO42.. Parameter Luminous intensity
1)

Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA VR = 6 V VR = 0, f = 1 MHz

Part TLHO4200 TLHO4201

Symbol IV IV d p VF IR Cj

Min 4 10 598

Typ. 10 18

Max

Unit mcd mcd

Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse current Junction capacitance
1)

611 605 22 2.4 50 3 10

nm nm deg V A pF

in one Packing Unit IVmin/IVmax 0.5

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Document Number 83005 Rev. 1.3, 31-Aug-04

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Yellow
TLHY42.. Parameter Luminous intensity
1)

TLHG / O / P / R / Y420.
Vishay Semiconductors

Test condition IF = 10 mA

Part TLHY4200 TLHY4201 TLHY4205

Symbol IV IV IV d p VF VR Cj

Min 4 6.3 10 581

Typ. 10 15 20

Max

Unit mcd mcd mcd

Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
1)

IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz

594 585 22 2.4 3

nm nm deg V V pF

15 50

in one Packing Unit IVmin/IVmax 0.5

Green
TLHG42.. Parameter Luminous intensity 1) Test condition IF = 10 mA Part TLHG4200 TLHG4201 TLHG4205 Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
1)

Symbol IV IV IV d p VF VR Cj

Min 6.3 10 16 562

Typ. 10 15 20

Max

Unit mcd mcd mcd

IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz

575 565 22 2.4 3

nm nm deg V V pF

15 50

in one Packing Unit IVmin/IVmax 0.5

Pure green
TLHP42.. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
1)

Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz

Part TLHP4200 TLHP4201

Symbol IV IV d p VF VR Cj

Min 2.5 6.3 555

Typ. 7

Max 20 565

Unit mcd mcd nm nm deg

555 22 2.4 6 15 50 3

V V pF

in one Packing Unit IVmin/IVmax 0.5

Document Number 83005 Rev. 1.3, 31-Aug-04

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TLHG / O / P / R / Y420.
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
0
IVrel - Relative Luminous Intensity

VISHAY

10

20

125
P - Power Dissipation ( mW ) V

30

100 75 50 25 0

1.0 0.9 0.8 0.7 0.6

40 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4

20

40

60

80

100
95 10041

95 10904

Tamb - Ambient Temperature ( C )

Figure 1. Power Dissipation vs. Ambient Temperature

Figure 4. Rel. Luminous Intensity vs. Angular Displacement

1000
I F - Forward Current ( mA )

60
IF - Forward Current ( mA)

Red 100 t p /T = 0.001 t p = 10 s

50 40 30 20 10 0 0 20 40 60 80 100

10

0.1 0
95 10026

10

95 10905

Tamb - Ambient Temperature ( C )

V F - Forward Voltage ( V )

Figure 2. Forward Current vs. Ambient Temperature for InGaN

Figure 5. Forward Current vs. Forward Voltage

I v rel - Relative Luminous Intensity

10000 Tamb 65 C
IF - Forward Current ( mA )

1.6

Red

1000

t p /T= 0.01 0.02 0.05

1.2

100 1 10 0.5 0.2 0.1

0.8

0.4 I F = 10 mA 0 20 40 60 80 100 Tamb - Ambient Temperature ( C )

1 0.01
95 10047

0 0.1 1 10 100
95 10027

t p - Pulse Length ( ms )

Figure 3. Forward Current vs. Pulse Length

Figure 6. Rel. Luminous Intensity vs. Ambient Temperature

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Document Number 83005 Rev. 1.3, 31-Aug-04

VISHAY

TLHG / O / P / R / Y420.
Vishay Semiconductors
100
I F - Forward Current ( mA )

2.4
I V re l - Relative Luminous Intensity

Red 2.0 1.6 1.2 0.8 0.4

Soft Orange

10

0.1

0 10
95 10321

20 0.5

50 0.2

100 0.1

200 0.05

500 I F (mA) 0.02 tp /T

95 9990

V F - Forward Voltage ( V )

Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle

Figure 10. Forward Current vs. Forward Voltage

I v rel - Relative Luminous Intensity

10
I v rel - Relative Luminous Intensity

2.0 Red Soft Orange 1.6 1.2 0.8 0.4 0 1 10 I F - Forward Current ( mA ) 100
95 9994

0.1

0.01
95 10029

20

40

60

80

100

Tamb - Ambient Temperature ( C )

Figure 8. Relative Luminous Intensity vs. Forward Current

Figure 11. Rel. Luminous Intensity vs. Ambient Temperature

1.2
I V re l - Relative Luminous Intensity

2.4
I V re l - Relative Luminous Intensity

Red 1.0 0.8 0.6 0.4 0.2 0 590

Soft Orange 2.0 1.6 1.2 0.8 0.4 0

610

630

650

670

690
95 10259

10 1

20 0.5

50 0.2

100 0.1

200 0.05

500 I F (mA) 0.02 tp /T

95 10040

- Wavelength ( nm )

Figure 9. Relative Intensity vs. Wavelength

Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle

Document Number 83005 Rev. 1.3, 31-Aug-04

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TLHG / O / P / R / Y420.
Vishay Semiconductors
1.6 10 Soft Orange
I v rel - Relative Luminous Intensity

VISHAY

I v rel - Relative Luminous Intensity

Yellow

1.2

0.8

0.1

0.4 I F = 10 mA 0 20 40 60 80 100 Tamb - Ambient Temperature ( C )

0.01 1
95 9997

0 10 I F - Forward Current ( mA ) 100

95 10031

Figure 13. Relative Luminous Intensity vs. Forward Current

Figure 16. Rel. Luminous Intensity vs. Ambient Temperature

1.2
IVrel - Relative Luminous Intensity

Soft Orange 1.0 0.8 0.6 0.4 0.2 0 570

I v rel - Relative Luminous Intensity

2.4 2.0 1.6 1.2 0.8 0.4 0 Yellow

590

610

630

650

670
95 10260

10 1

20 0.5

50 0.2

100 0.1

200 0.05

500 I F (mA) 0.02 tp /T

95 10324

- Wavelength ( nm )

Figure 14. Relative Intensity vs. Wavelength

Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle

1000 Yellow 100 t p /T = 0.001 t p = 10 s 10

I v rel - Relative Luminous Intensity I F - Forward Current ( mA )

10 Yellow 1

0.1

0.1 0
95 10030

10

0.01 1
95 10033

10 I F - Forward Current ( mA )

100

V F - Forward Voltage ( V )

Figure 15. Forward Current vs. Forward Voltage

Figure 18. Relative Luminous Intensity vs. Forward Current

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Document Number 83005 Rev. 1.3, 31-Aug-04

VISHAY

TLHG / O / P / R / Y420.
Vishay Semiconductors
2.4
I v rel - Specific Luminous Intensity

1.2
IVrel - Relative Luminous Intensity

1.0 0.8 0.6 0.4 0.2 0 550

Yellow

2.0 1.6 1.2 0.8 0.4 0

Green

570

590

610

630

650
95 10263

95 10039

- Wavelength ( nm ) -

10 1

20 0.5

50 0.2

100 0.1

200 0.05

500 IF(mA) 0.02 tp/T

Figure 19. Relative Intensity vs. Wavelength

Figure 22. Specific Luminous Intensity vs. Forward Current

1000 Green 100 t p /T = 0.001 t p = 10 s 10

I v rel - Relative Luminous Intensity I F - Forward Current ( mA )

10 Green 1

0.1

0.1 0
95 10034

10
95 10037

10 I F - Forward Current ( mA )

100

V F - Forward Voltage ( V )

Figure 20. Forward Current vs. Forward Voltage

Figure 23. Relative Luminous Intensity vs. Forward Current

I v rel - Relative Luminous Intensity

1.6

IVrel - Relative Luminous Intensity

Green

1.2 1.0 0.8 0.6 0.4 0.2 0 520

95 10038

Green

1.2

0.8

0.4

I F = 10 mA

0
95 10035

20

40

60

80

100

540

560

580

600

620

T amb - Ambient Temperature ( C )

- Wavelength ( nm ) -

Figure 21. Rel. Luminous Intensity vs. Ambient Temperature

Figure 24. Relative Intensity vs. Wavelength

Document Number 83005 Rev. 1.3, 31-Aug-04

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TLHG / O / P / R / Y420.
Vishay Semiconductors
100 Pure Green
I F Forward Current ( mA ) I Vrel - Relative Luminous Intensity

VISHAY

10 Pure Green

10

0.1

0.1 0
95 9988

0.01 1 2 3 4 5
95 9998

10 I F - Forward Current ( mA )

100

V F Forward Voltage ( V )

Figure 25. Forward Current vs. Forward Voltage

Figure 28. Relative Luminous Intensity vs. Forward Current

2.0
I Vrel - Relative Luminous Intensity I Vrel - Relative Luminous Intensity

1.2 Pure Green 1.0 0.8 0.6 0.4 0.2 0 500

95 10325

Pure Green

1.6 1.2 0.8 0.4 0

20

40

60

80

100

520

540

560

580

600

95 9991

Tamb Ambient Temperature ( C )

- Wavelength ( nm )

Figure 26. Rel. Luminous Intensity vs. Ambient Temperature

Figure 29. Relative Intensity vs. Wavelength

2.4 Pure Green

I Spec - Specific Luninous Flux

2.0 1.6 1.2 0.8 0.4 0 10 100 I F - Forward Current ( mA ) 1000

95 10261

Figure 27. Specific Luminous Intensity vs. Forward Current

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Document Number 83005 Rev. 1.3, 31-Aug-04

VISHAY
Package Dimensions in mm

TLHG / O / P / R / Y420.
Vishay Semiconductors

95 10913

Document Number 83005 Rev. 1.3, 31-Aug-04

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TLHG / O / P / R / Y420.
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.

VISHAY

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 83005 Rev. 1.3, 31-Aug-04

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