DATA SHEET

SILICON POWER MOS FET

NE5520379A
3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS

DESCRIPTION
The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a surface mount package. This device can deliver 34.6 dBm output power with 68% power efficiency at 915 MHz under the 2.8 V supply voltage.

FEATURES
High output power : Pout = 35.5 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm) : Pout = 33.0 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm) High power added efficiency : add = 65% TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm) : add = 35% TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm) High linear gain Surface mount package Single supply : GL = 16.0 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 10 dBm) : GL = 8.5 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 10 dBm) : 5.7 5.7 1.1 mm MAX. : VDS = 2.8 to 6.0 V

APPLICATIONS
Digital cellular phones Others : 3.2 V GSM/DCS Dual-Band handsets : General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications

ORDERING INFORMATION
Part Number NE5520379A-T1 Package 79A Marking A3 Supplying Form 12 mm wide embossed taping Gate pin face the perforation side of the tape Qty 1 kpcs/reel NE5520379A-T1A 12 mm wide embossed taping Gate pin face the perforation side of the tape Qty 5 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE5520379A-A

Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge

Document No. PU10122EJ03V0DS (3rd edition) Date Published July 2003 CP(K)

The mark shows major revised points.

NE5520379A
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current (Pulse Test) Total Power Dissipation Channel Temperature Storage Temperature ID Symbol VDS VGS ID
Note

Ratings 15.0 5.0 1.5 3.0 20 125 65 to +125

Unit V V A A W C C

Ptot Tch Tstg

Note Duty Cycle 50%, Ton 1 s

RECOMMENDED OPERATING CONDITIONS

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (Pulse Test) Input Power Symbol VDS VGS ID Pin Duty Cycle 50%, Ton 1 s f = 1.8 GHz, VDS = 3.6 V Test Conditions MIN. 2.8 0 24 TYP. 3.2 2.5 1.75 25 MAX. 6.0 3.5 2.0 26 Unit V V A dBm

Data Sheet PU10122EJ03V0DS

NE5520379A
ELECTRICAL CHARACTERISTICS (T A = +25C)
Parameter Gate to Source Leak Current Drain to Source Leakage Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Transconductance Drain to Source Breakdown Voltage Thermal Resistance Linear Gain Symbol IGSS IDSS Vth Gm BVDSS Rth GL VGS = 6.0 V VDS = 8.5 V VDS = 3.5 V, ID = 1 mA VDS = 3.5 V, ID = 0.8 to 1.0 A IDSS = 10 A Channel to Case f = 915 MHz, Pin = 10 dBm, VDS = 3.2 V, VGS = 2.5 V, Note Output Power Drain Efficiency Power Added Efficiency Linear Gain Pout f = 915 MHz, Pin = 25 dBm, VDS = 3.2 V, VGS = 2.5 V, Note f = 1 785 MHz, Pin = 10 dBm, VDS = 3.2 V, VGS = 2.5 V, Note Output Power Drain Efficiency Power Added Efficiency Pout f = 1 785 MHz, Pin = 25 dBm, VDS = 3.2 V, VGS = 2.5 V, Note 31.0 29 33.0 38 35 dBm % % 35.5 68 65 8.5 dBm % % dB Test Conditions MIN. 1.0 15 TYP. 1.35 2.5 20 16.0 MAX. 100 100 2.0 5 Unit nA nA V S V C/W dB

d add
GL

d add

Note DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples.

Data Sheet PU10122EJ03V0DS

NE5520379A
TYPICAL CHARACTERISTICS (T A = +25C)

Data Sheet PU10122EJ03V0DS

NE5520379A

Data Sheet PU10122EJ03V0DS

NE5520379A

Remark The graphs indicate nominal characteristics.

Data Sheet PU10122EJ03V0DS

NE5520379A
S-PARAMETERS

LARGE SIGNAL IMPEDANCE (VDS = 3.2 V, IDset = 600 mA, Pin = 25 dBm)
f (MHz) 1 785 Zin () TBD ZOL ()
Note

TBD

Note ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.

Data Sheet PU10122EJ03V0DS

NE5520379A
PACKAGE DIMENSIONS 79A (UNIT: mm)

79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)

Data Sheet PU10122EJ03V0DS

NE5520379A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) VPS Peak temperature (package surface temperature) Time at temperature of 200C or higher Preheating time at 120 to 150C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2%(Wt.) or below : 215C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260C or below : 10 seconds or less : 120C or below : 1 time : 0.2%(Wt.) or below : 350C or below : 3 seconds or less : 0.2%(Wt.) or below HS350-P3 WS260 VP215 Condition Symbol IR260

For soldering

Caution Do not use different soldering methods together (except for partial heating).

Data Sheet PU10122EJ03V0DS