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Preliminary specification
BTA212X series C
PINNING - SOT186A
PIN 1 2 3 DESCRIPTION main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2 gate
1 2 3
T1
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Ths 56 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s CONDITIONS MIN. -500 5001 MAX. -600 6001 12 -800 800 UNIT V A
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
A A A2s A/s A V W W C C
-40 -
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. October 1997 1 Rev 1.000
Philips Semiconductors
Preliminary specification
BTA212X series C
TYP.
MAX. 2500
UNIT V
Cisol
10
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 4.0 5.5 UNIT K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current
2
MIN. 2 2 2 0.25 -
UNIT mA mA mA mA mA mA mA V V V mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt dIcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 C; IT(RMS) = 12 A; without snubber; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. 1000 3 TYP. 14 2 UNIT V/s A/ms s
2 Device does not trigger in the T2-, G+ quadrant. October 1997 2 Rev 1.000
Philips Semiconductors
Preliminary specification
BTA212X series C
5.08
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
October 1997
Rev 1.000
Philips Semiconductors
Preliminary specification
BTA212X series C
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
October 1997
Rev 1.000