N-Channel Enhancement Mode Field Effect Transistor FEATURES

60V, 50A ,RDS(ON) = 22m (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.

CEP50N06/CEB50N06

G
G D S

S CEB SERIES TO-263(DD-PAK)

CEP SERIES TO-220

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a

Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 60

Units V V A A W W/ C mJ A C

20
50 150 131 0.88 225 50 -55 to 175

Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range

Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 1.14 62.5 Units W/ C W/ C

Specification and data are subject to change without notice . 1

Rev 4. 2009.Nov http://www.cetsemi.com

CEP50N06/CEB50N06
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 30A VDS = 48V, ID = 48A, VGS = 10V VDD = 30V, ID = 48A, VGS = 10V, RGEN = 7.5 18 12.5 32.5 3 8 1.5 2 50 1.2 24 14 65 6 16 ns ns ns ns nC nC nC A V
c

Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250A VDS = 54V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 30A VDS = 10V, ID = 25A 2 19 19 1230 345 16 Min 60 1 100 -100 4 22 Typ Max Units V
A

nA nA V m S pF pF pF

VDS = 25V, VGS = 0V, f = 1.0 MHz

Drain-Source Diode Characteristics and Maximun Ratings

Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 90H, IAS = 50A, VDD = 24V, RG = 25, Starting TJ = 25 C

CEP50N06/CEB50N06
120 100 80 60 40 20 0

VGS=10V

125

ID, Drain Current (A)

VGS=7V

ID, Drain Current (A)

VGS=8V

25 C 100 75 50 25 TJ=125 C 6 0 0 2 4

VGS=6V VGS=5V VGS=4V

0 1 2 3 4 5

-55 C 6 8 10

VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics

1800 1500 1200 900 600 300 0 Crss 0 5 10 15 20 25 Coss Ciss 2.6 2.2 1.8 1.4 1.0 0.6 0.2 -100

VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics

ID=30A VGS=10V

RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)

C, Capacitance (pF)

-50

50

100

150

200

VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance

1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS

TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A)
VGS=0V
10
1

VTH, Normalized Gate-Source Threshold Voltage

ID=250A

10

-25

25

50

75

100

125

150

10

-1

0.3

0.6

0.9

1.2

1.5

1.8

TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature

VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current

CEP50N06/CEB50N06
VGS, Gate to Source Voltage (V)
10 V =48V DS ID=50A RDS(ON)Limit

ID, Drain Current (A)

8 6 4 2 0

10

4
100s 1ms 10ms 100ms DC

10

10

TC=25 C TJ=175 C Single Pulse 10

0

10

10

Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%

VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area

toff tr
90%

td(off)
90% 10%

tf

INVERTED

90%

VIN

50% 10%

50%

PULSE WIDTH

Figure 9. Switching Test Circuit

Figure 10. Switching Waveforms

r(t),Normalized Effective Transient Thermal Impedance

10

D=0.5 0.2

10

-1

0.1 0.05 0.02 0.01 Single Pulse

PDM t1 t2

10

-2

1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve