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SEMICONDUCTOR TECHNICAL DATA

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Data Sheet TMOS E-FET. Power Field Effect Transistor

Designer's

MTP8N50E
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM

NChannel EnhancementMode Silicon Gate

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature

G S

CASE 221A06, Style 5 TO-220AB

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 MW) GatetoSource Voltage Continuous GatetoSource Voltage Nonrepetitive (tp 10 ms) Drain Current Continuous @ TC = 25C Drain Current Continuous @ TC = 100C Drain Current Single Pulse (tp 10 ms) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy STARTING TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 8.0 Apk, L = 16 mH, RG = 25 W) Thermal Resistance JunctiontoCase JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 5 sec. Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS Value 500 500 20 40 8.0 5.0 32 125 1.0 55 to 150 510 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C C mJ

RqJC RqJA TL

1.0 62.5 260

C/W C

This document contains information on a new product. Specifications and information herein are subject to change without notice.

EFET and Designers are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

REV 2

Motorola TMOS Motorola, Inc. 1996

Power MOSFET Transistor Device Data

MTP8N50E
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 4.0 Adc) DraintoSource OnVoltage (VGS = 10 Vdc) (ID = 8.0 Adc) (ID = 4.0 Adc, TJ = 125C) Forward Transconductance (VDS = 15 Vdc, ID = 4.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (see Figure 8) ( (VDS = 400 Vdc, ID = 8 0 Ad , Vd , 8.0 Adc, VGS = 10 Vdc) (Rgo + C1 = 9.1 W) C17n 9 1 td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 8.0 Adc, VGS = 0 Vdc) (IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125C) Reverse Recovery Time ( (IS = 8 0 Ad , VGS = 0 Vdc, 8.0 Adc, Vd , dIS/dt = 100 A/ms) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. (2) Switching characteristics are independent of operating junction temperature. LD LS 7.5 4.5 nH trr ta tb QRR VSD 1.2 1.1 320 179 141 3.0 2.0 ns Vdc 15 33 40 32 40 8.0 17 17.3 50 72 150 60 64 nC ns (VDS = 25 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) Ciss Coss Crss 1450 190 45.4 1680 246 144 pF VGS(th) 2.0 RDS(on) VDS(on) gFS 4.0 5.0 7.2 6.4 mhos 0.6 0.8 Vdc 2.8 6.3 4.0 Vdc mV/C Ohms V(BR)DSS 500 IDSS IGSS 100 250 1000 500 Vdc mV/C Symbol Min Typ Max Unit

mAdc
nAdc

mC

Motorola TMOS Power MOSFET Transistor Device Data

MTP8N50E
TYPICAL ELECTRICAL CHARACTERISTICS
16 TJ = 25C I D, DRAIN CURRENT (AMPS) 8V 12 6V VGS = 10 V 7V I D, DRAIN CURRENT (AMPS) 16 14 12 10 8.0 100C 6.0 25C 4.0 TJ = 55C 2.0 0 0 12 2.0 4.0 6.0 8.0 10 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 14 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS, GATETOSOURCE VOLTAGE (VOLTS) 6.5 7.0 VDS 10 V

8.0

4.0

5V

Figure 1. OnRegion Characteristics

Figure 2. Transfer Characteristics

R DS(on), DRAINTOSOURCE RESISTANCE (OHMS)

1.6 1.4 1.2 1.0 0.8 25C 0.6 0.4 0.2 0 0 2.0 4.0 8.0 12 6.0 10 ID, DRAIN CURRENT (AMPS) 55C 14 16 VGS = 10 V TJ = 100C

R DS(on), DRAINTOSOURCE RESISTANCE (OHMS)

0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0 2.0 4.0 6.0 8.0 10 12 14 16 ID, DRAIN CURRENT (AMPS) VGS = 10 V 15 V TJ = 25C

Figure 3. OnResistance versus Drain Current and Temperature

RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)

Figure 4. OnResistance versus Drain Current and Gate Voltage

2.5 VGS = 10 V ID = 8 A

100,000 VGS = 0 V 10,000 IDSS, LEAKAGE (nA) TJ = 125C 100C 1,000

2.0

1.5

1.0

100

25C

0.5 0 50

10 1.0 25 0 25 50 75 100 125 150 0 100 200 300 400 500 TJ, JUNCTION TEMPERATURE (C) VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

Figure 5. OnResistance Variation with Temperature

Figure 6. DraintoSource Leakage Current versus Voltage

Motorola TMOS Power MOSFET Transistor Device Data

MTP8N50E
TYPICAL ELECTRICAL CHARACTERISTICS
4000 VDS = 0 V C, CAPACITANCE (pF) 3000 Ciss VGS = 0 V TJ = 25C C, CAPACITANCE (pF) 10,000 VGS = 0 V Ciss 1,000 TJ = 25C

2000 Ciss Crss 1000 Crss 5.0 0 VGS VDS GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS) 5.0 10 15 20 25 Coss

100

Coss

Crss 0 10 10 10 100 DRAINTOSOURCE VOLTAGE (VOLTS) 1000

Figure 8. High Voltage Capacitance Variation

Figure 7. Capacitance Variation

V GS, GATETOSOURCE VOLTAGE (VOLTS)

12 QT 10 8.0 VGS 6.0 4.0 2.0 Q3 0 0 8.0 VDS 16 24 Qg, TOTAL GATE CHARGE (nC) 32 TJ = 25C ID = 8 A Q1 Q2

400

1000 TJ = 25C ID = 8 A VDD = 250 V VGS = 10 V t, TIME (ns)

300

200

100

V DS , DRAINTOSOURCE VOLTAGE (VOLTS)

100

0 40

10 1.0

td(off) tr tf td(on) 10 RG, GATE RESISTANCE (OHMS) 100

Figure 9. GatetoSource and DraintoSource Voltage versus Total Charge

Figure 10. Resistive Switching Time Variation versus Gate Resistance

8.0 TJ = 25C VGS = 0 V I D, DRAIN CURRENT (AMPS) 6.0

100 VGS = 20 V SINGLE PULSE TC = 25C 10 ms 100 ms 1.0 1 ms 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1.0 10 100 1000

I S , SOURCE CURRENT (AMPS)

10

4.0

2.0

0.1

0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD, SOURCETODRAIN VOLTAGE (VOLTS)

0.01 VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

Figure 11. Diode Forward Voltage versus Current

Figure 12. Maximum Rated Forward Biased Safe Operating Area

Motorola TMOS Power MOSFET Transistor Device Data

MTP8N50E
600 EAS , SINGLE PULSE DRAINTOSOURCE AVALANCHE ENERGY (mJ) ID = 8 A 500 400 300 200 100 0 25

75 125 50 100 TJ, STARTING JUNCTION TEMPERATURE (C)

150

Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature

1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5

0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.00001

0.001

0.01 t, TIME (seconds)

0.1

1.0

10

Figure 14. Thermal Response

Motorola TMOS Power MOSFET Transistor Device Data

MTP8N50E
PACKAGE DIMENSIONS

T B
4

SEATING PLANE

F T S

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 2.04

Q
1 2 3

A U K
STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN

H Z L V G D N R J

CASE 221A06 ISSUE Y

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MTP8N50E/D Motorola TMOS Power MOSFET Transistor Device Data