EE3101 LA B R EP ORT EXP #6 06 DE C

2006
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High-frequency Behavior of Bi-Polar Junction Transistors

Matt xxxxx
Student ID : xxxxxxx
10/2/06 – 10/16/06

Abstract
In this experiment we will measure the input and output of various BJT-based amplifiers to determine the
value of the BJT’s internal components, such as Cπ , rπ , rx , and C µ which are included in the hybrid-π
small signal model. We will also investigate the effects of different amplifier designs on the midband gain
and bandwidth of the circuit. We will show that the product of gain and bandwidth of amplifier designs is a
constant value. This experiment is important because we will learn about the internal components of the
BJT and the different designs of amplifiers that utilize the BJT.

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Introduction
In previous experiments, we looked at how the BJT can be used in amplification and current
mirroring applications; these were for medium to low frequency situations where the high frequency effects
of the BJT were not eminent.

The focus of this experiment is the analysis of BJT-based amplifiers, and how the hybrid –π model
describes the BJT in these situations. This model is well suited for small signal analysis and accounts for
the internal capacitances of the BJT at high frequencies. During transistor operation, electric fields build up
within the BJT and create intrinsic capacitances; we can see these capacitances represented as capacitors in
our hybrid- π model

In this experiment we measure and calculate the components of the hybrid-π model (Figure 6.0.1)
of the BJT which is commonly used to analyze the response of small signal inputs of a circuit at various
frequencies, especially at high frequencies. The capacitance effect in the BJT does not show much effect at
low frequencies, because they work as an open circuit. However, as the frequency may increase these
capacitances work as a low-pass filter, which results in a decrease of the current or voltage gain. The break
frequency, same as cutoff frequency, is calculated at the -3dB value of the max gain, which is the value of
1
Amax . The relationship between the cutoff frequency and the components of the Hybrid-π Model is
2
given in Figure 6.0.2

Base R x Collector

R pi C pi
C u
R o
1 / f H = 2πrπ [Cπ + (1 + g m RL )Cµ ]

Emitter

Fig 6.0.1 Fig 6.0.2

In the first part of the experiment we gather information of the CE Amplifier and calculate the
break frequency of the circuit. Using that data, with the equation in Figure 6.0.2, we are able to calculate
the values of the unknown components in the Hybrid-π Model.
Further along, as we get to understand the Hybrid-π Model, we will then focus on other amplifiers,
such as the Cascode, and the CC-CB, to investigate the relationship between midband gain and bandwidth.
We will find that the greater the gain is, the smaller the bandwidth will be and vice versa.

Experiment

Part 1 – Hybrid- π Model

Experiment 6.1

For the first part of our experiment, we will use a simple common-emitter transistor design as shown in Fig
6.1.1.

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BJT Schematic of A Common-Emitter Amplifier

Vcc

Given Values
VCC = +15V
R b R l VB=7.5V
RL=100Ω
RS=10K
R s C s
Q 1 IS=1mA
C A 3096AE Ce=CS=10uF
Vs
Solved For Values
R e
C e RB = 2MΩ
RE = 6.77KΩ

Fig 6.1.1

We will use the Q1 BJT contained within the CA3096AE IC chip for our transistor as seen in Fig 6.1.2.
This BJT has a theoretical β value of around 250.

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Fig 6.1.2

Notes on this (Fig 6.1.1) design.

1. At low frequencies, the internal BJT capacitances will have negligible effects
2. CE and CS are intended to be short circuits at the measurement frequency and open circuits during
DC bias.
3. We will attempt to bias the transistor so that the collector current is about 1mA
4. RL=100Ω so that we may increase it by a factor of 10 later on and still have it be < 10K Ω
5. CE=CS=10uF so that we may have shorts at lower frequencies, but not at DC.

We still need to solve for some component values. To do this, we will look at the circuit in its DC bias
mode as seen in Fig 6.1.3.
DC Bias Mode of Common Emitter Amplifier
Vcc

Given Values
VCC = +15V
VB=7.5V
R b R l
RL=100Ω
RS=10K
IS=1mA
Q 1 Ce=CS=10uF
C A 3096AE

Solved For Values

R e RB = 2MΩ
RE = 6.77KΩ

0
Fig 6.1.3

We need to solve for RB and RE, to calculate RB, we will solve for IB first using Ic.

IC = (1 + β ) I B
1mA = (1 + 250) I B
I B = 3.98uA
Since we know we want VB to be 7.5V and VCC = 15, we know we will have a voltage drop across RB of
7.5V and the current through the resistor is I b = 3.98uA .

VCC − V B 7.5V
RB = = = 1.88MΩ ≈ 2 MΩ
IB 3.98uA

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We can also solve for Re in the following way,

I E = I B + I C = 1mA + 3.98uA ≈ 1mA

0 = V B − V BE − I E R E = 7.5V − 0.7V − (1mA) RE
R E = 6.77 KΩ ≈ 4.7 KΩ + 2 KΩ

We can verify our design by making sure that VB = 7.5V. When measured, it turns out to be 7.4V. This is
close enough for our purposes as this is only a bias voltage, we just want it near 7.5V so that we have
enough room for voltage swing when we begin amplifying.

7.5V − 7.4V
Our error percentage is 100 x = 13%
7.5V
We will now measure Rin which is the input resistance into the base node of the BJT. To do this, we will
Vin
measure = Rin . Vin will be VB and Iin will be the current though the RS resistor.
I in

169mV − 75mV
I in = = 9.4mA
10 KΩ
V 75mV
Rin = in = = 8 KΩ
I in 9.4mA

We can verify our circuit operation by measuring our β Value using the following equation.
I C = (1 + β ) I B
We need to know IB and IC. To measure these values, we will just take the voltage drop across their
 V
respective resistors and divide by the resistor value I =  .
 R

15V − 7.4V
IB = = 3.81uA
2 MΩ
15.07V − 14.96V
IC = = 1.1mA
100Ω
We can now solve for β.
I C = (1 + β ) I B ⇒ 1.1mA = (1 + β ) 3.81uA
β = 287

287 − 250
Our error percentage is 100 x = 14.8%
250
We also need to solve for gm which we will need later on. gm is defined by the following equation.
IC
gm = . VT is always 26mV for a BJT so we have the following equation.
VT

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1.1mA
gm = = 4.4mS (Fig 6.1.4)
26mV
These results are reasonable considering the equipment we are using.

Experiment 6.2

In the next three experiments, we will derive three equations using the break frequency of the circuit to
obtain the unknown values of Cπ , rπ , rx , and C µ as represented in the hybrid-π model of the small signal
representation of a BJT. We can see the small signal representation in Fig 6.2.1 below.

Small Signal Representation of a BJT

Base R x Collector

C u
R pi C pi R o

Emitter

Fig 6.2.1

We will use the following equation (Fig 6.2.2) to do this.

1
= 2πrπ [Cπ + (1 + g m R L ) C µ ]
fH
Fig 6.2.2

We will modify the circuit slightly in each portion of the experiment to obtain different measurements for
f H while knowing corresponding variables in the equation. This way, we can develop three equations with
three unknowns in a system of linear equations.

Note that we will be using f H as out -3dB point. Where our current gain, AI , has dropped 3dB. Also note
that the fH point will occur when AI = .707 xAmidband

We will need a method of measuring current gain. We know that current gain is the output current divided
by input current. Here, our output current is the collector current, and our input current is the base current.
We can measure these currents by measuring our voltage drops over respective resistors and diving by the
resistance value. See Fig 6.2.3

Derivation of AI Measurement

− vC
iout i RL
AI = = C =
iin iB vS − v B
RS
Fig 6.2.3

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In the first part of this experiment, we will take our data when RL=100Ω

We will now take out current gain measurements at various frequencies to find our -3dB point. See Fig
6.2.4(a) for out numerical data and Fig 6.2.4(b) for a graphical representation of our data.

Results of AI Measurement at -3dB Point and Various Frequencies When RL=100 Ω

Frequency (kHz) ib (µA pk->pk) ic (mA pk->pk) Gain (IC/IB)

1 4.5 1.57 322.2 <- Midband Gain
10 5.4 1.66 302
100 5.41 1.63 302
350 6.5 1.48 227.8 <- -3dB point
Fig 6.2.4(a)

Results of A I Measurement at -3dB Point and Various

Frequencies When RL = 100Ω

350

300 RL = 100Ω

250
Gain (I C /I B )

200

150

100

50

0
0 100 200 300 400
Frequency (kHz)

Fig 6.2.4(b)

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Using this data, we can determine that our -3dB point lies at f H = 350kHz , and therefore we know that

1 1
= 2πrπ [Cπ + (1 + g m R L ) C µ ] = = 2πrπ [Cπ + (1 + g m 100Ω ) C µ ] (Fig 6.2.5)
fH 350kHz

by plugging measured values into our equation in Fig 6.2.2.

We will use Fig 6.2.5 later on when we solve for our unknowns.

Experiment 6.3

For the second portion of the experiment we will add capacitance to Fig 6.1.1 between the base and the
collector of the BJT (Cx=1nF). Our new circuit will look the schematic see in Fig 6.3.1

New Schematic with CX Added

Given Values
Vcc VCC = +15V
VB=7.5V
RL=100Ω
RS=10K
R b R l IS=1mA
C x Ce=CS=10uF
R s C s
Cx=1nF
Q 1 Solved For Values
C A 3096AE RB = 2MΩ
Vs RE = 6.77KΩ
R e
C e

0
Fig 6.3.1

Our new small signal model will change from what is seen in Fig 6.3.2(a) to Fig 6.3.2(b). Note that after
the addition of CX, our Cµ value is negligible since it is much smaller than CX. We can therefore neglect Cµ
in our f H equation (Fig 6.2.2).

Hybrid-π representation of BJT before and after the addition of CX Capacitor

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C x

Base R x Collector Base R x Collector

C u C u
R pi C pi R o R pi C pi R o

Emitter Emitter

Fig 6.3.2(a) Fig 6.3.2(b)

We will use the exact same process as described in experiment 6.2 to take the measurements of the current
gain over frequency and then discover our new f H . See Figures 6.3.4(a)&(b) for our results.

Results of AI Measurement at -3dB Point and Various Frequencies When RL=100 Ω & Cx=1nF

Frequency (kHz) ib (µA pk->pk) ic (mA pk->pk) Gain (IC/IB)

1 3.6 1.56 433 <- Midband Gain
3.8 5.2 1.59 306.1 <- -3dB point
10 6.55 1.05 160
Fig 6.3.3(a)

Results of AI Measurement at -3dB Point and Various Frequencies

When RL=100 Ω & Cx=1nF

500
450
RL=100 Ω & Cx=1nF
400
350
Gain (I C /I B )

300
250
200
150
100
50
0
1 10
Frequency (kHz)

Fig 6.3.3(b)

Using this data, we can determine that our -3dB point lies at f H = 3.8kHz , and therefore we know that

= 2πrπ [Cπ + (1 + g m 100Ω)( C µ + C x ) ] by plugging

1 1
= 2πrπ [Cπ + (1 + g m R L )C µ ] =
fH 3.8kHz

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measured values into our equation in Fig 6.2.2. Since we know that C µ + C x ≈ C x = 1nF , we can write
1 1
= = 2πrπ [Cπ + (1 + ( 4.4mS )100Ω )(1nF ) ] (Fig 6.3.4)
f H 3.8kHz
We will use this equation (Fig 6.3.4) later on when we solve for our unknowns.

We can also conclude that inserting the 1nF capacitor, Cx decreased our f H from 350kHz to 3.8kHz, and
that Iin increases with frequency because our circuit impedance decreases with frequency.

Experiment 6.4

For the third portion of our experiment, we will remove the capacitor, C x that we added in the previous
analysis and we will be increasing our RL by a factor of 10. Our circuit should look like the schematic
shown in Figure 6.4.1.

Schematic of our circuit after we have removed Cx and have increased RL by a Factor of 10.

Vcc

Given Values
VCC = +15V
R b R l VB=7.5V
RL=100Ω
R s C s
RS=10K
Q 1 IS=1mA
C A 3096AE
Ce=CS=10uF
Vs

R e
Solved For Values
C e RB = 2MΩ
RE = 6.77KΩ

Fig 6.4.1

We will use the exact same process as described in experiment 6.2 to take the measurements of the current
gain over frequency and then discover our new f H . See Figures 6.4.1(a)&(b) for our results.

Results of AI Measurement at -3dB Point and Various Frequencies When RL=1KΩ

Frequency (kHz) ib (µA pk->pk) ic (mA pk->pk) Gain (IC/IB)

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1 4.5 1.57 348 <- Midband Gain

10 5.22 1.57 301
100 5.23 1.56 299
200 5.5 1.35 246 <- -3dB point
400 6.61 1.26 190

Fig 6.4.1(a)

Results of A I Measurement at -3dB Point and Various Frequencies When

RL=1KΩ

400

350 RL=1KΩ

300

250
Gain (I C /I B )

200

150

100

50

0
1 10 100 1000
Frequency (kHz)

Fig 6.4.1(b)

Using this data, we can determine that our -3dB point lies at f H = 200kHz , and therefore we know that

1 1
= 2πrπ [Cπ + (1 + g m R L )C µ ] = = 2πrπ [Cπ + (1 + ( 4.4mS )(1KΩ ) ) C µ ]
fH 200kHz
(Fig 6.4.2)

by plugging measured values into our equation in Fig 6.2.2.

We can conclude that increasing the load resistor, RL decreased our f H from 350kHz to 200kHz. This is
most likely because increasing the load resistor will increase the input impedance and therefore slow the
charging time of the capacitors. This reduces the gain because the capacitors cannot charge as quickly as
before at higher frequencies.

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Experiment 6.5

We can use the three test case equations, Figures 6.2.5, 6.3.4, and 6.4.2, to solve for our unknown values of
Cπ , Rπ , andC µ . To calculate the values, we use a matrix of the three unknown variables with the three
equations.

From the first equation, (Figure 6.2.5), we have:

1
= 2πrπ [Cπ + (1 + (4.4mS )(100Ω))C µ ]
350 KHz
1 1
A. = Cπ + 1.44C µ
350 KHz ( 2π ) rπ
1 1
0 = Cπ + 1.44C µ −
350 KHz (2π ) rπ
From the second equation, (Figure 6.3.4), we have:
1
= 2πrπ [Cπ + (1 + ( 4)(100Ω))(C µ + 1nF )]
3.8 KHz
1 1
= Cπ + 1.44(C µ + 1nF )
3.8 KHz ( 2π ) rπ
B.
1 1
= Cπ + 1.44C µ + 1.44 ×10 −9
3.8 KHz ( 2π ) rπ
1 1
− 1.44 ×10 −9 = Cπ + 1.44C µ −
3.8 KHz ( 2π ) rπ
From the third equation, (Figure 6.4.2), we have:
1
= 2πrπ [Cπ + (1 + (4.4mS )(1KΩ))C µ ]
200 KHz
1 1
C. = Cπ + 4.4C µ
200 KHz (2π ) rπ
1 1
0 = Cπ + 4.4C µ −
200 KHz (2π ) rπ
If we solve these equations using a system of equations solver, we will get:

Cπ = 11.5 pF
Cµ = 3 pF By looking at these results, we know there
is something wrong. rπ is much too high a
rπ = 28.0 KΩ value. We know this because when we
calculate rx the following occurs:

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rx = Rin − rπ = 8 K − 28.0 K = −20 KΩ

We can’t have a negative resistance so this result isn’t plausible. However, all of our other data checks out
so there is nothing we can do here. Given the condition of our equipment we can’t expect to have perfect
answers on high frequency measurements that require very precise results.

Part 2 – Other Cases with Different Amplifiers

We will now inspect the relationship, or tradeoff between the midband gain and its bandwidth.

Experiment 6.6
We will now construct a cascade amplifier using the schematic shown in Figure 6.6.1. The objective of this
experiment is to measure the gain and bandwidth of the circuit to compare it with the data gathered earlier
in this lab.

Cascode Amplifier Schematic

Vcc Given Values

VCC=20V
IR5=1mA
R5 VA=10V
R1
VB=5V
C1 Q1 Vout
Va 2N3933 R3=1KΩ
C1=C2=10µF
R2
0 C3=µ47
C2
Q2
Vb 2N3933 Solved for Values
R1=2KΩ
Vs R4 R2=1KΩ
R3 C3 R4=4.3KΩ

Fig 6.6.1

Since we were having many problems with the BJTs contained within the CA3096 IC chip, we will switch
to the 2N3933 discrete BJT at this point. This BJT has a theoretical β value of around 150.

We know that in DC bias mode, our circuit will behave like the circuit seen in Figure 6.6.2

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Cascode Amplifier in DC Bias Mode

Vcc
Given Values
VCC=20V
R5 IR5=1mA
R1
VA=10V
Q1 Vout
Va 2N3933
VB=5V
R3=1KΩ
R2
C1=C2=10µF
C3=µ47
Q2
Vb 2N3933 Solved for Values
R1=2KΩ
R3 R4 R2=1KΩ
R4=4.3KΩ

Fig 6.6.2

Now we need to solve for some unknown values in our schematic using the DC bias mode schematic
(Figure 6.6.2). Since we want VODC to be biased 15V, VCC at 20V, and we want IR5=1mA, we can solve for
R5:

VCC − VODC 20V − 15V

R5 = = = 5 KΩ
I5 1mA

Since we know VB=5V We also know that the equation for the current though R3 is

VB 5V
I R3 = = = 5mA
R3 1KΩ
The current through R3 is the same current though R1 and R2 in DC operation if we neglect base current. So
IR1 and IR2 are both 5mA as well. We can therefore solve for our values of R 2 and R1 by using our known
values for VCC, VA, and VB.

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V A − V B 10V − 5V
R2 = = = 1KΩ
I R2 5mA
VCC − V A 20V − 10V
R1 = = = 2 KΩ
I R1 5mA

Since the voltage at the emitter of Q2 is 5V-0.7V=4.3V, the current though R4 is 1mA during DC operation
if we neglect base currents. This is because we are therefore assuming the entire right side of the amplifier
has a current of 1mA.

V EQ 2 4.3V
R4 = = = 4.3KΩ ≈ 2.2 KΩ + 2.2 KΩ
I R4 1mA

Now that we know all of our component values, we will measure the peak to peak voltage gain over a range
of frequencies. Keep in mind that Vin is the positive terminal of the voltage source VS, and Vout is marked on
Figure 6.6.1. Our results are shown in Figures 6.6.3(a)&(b).

Results of Av Measurement at -3dB Points and Various Frequencies

Frequency (kHz) vin (mV pk->pk) vout (V pk->pk) Gain (Vout/Vin)

0.02 94 0.44 4.7
0.1 88 1.13 12.8
0.21 88 1.45 16.5 <- -3dB point
1 88 1.75 19.9
10 82 1.75 21.3
100 75 1.75 23.3 <- Midband Gain
1000 75 1.69 22.5
5000 75 1.69 22.5
10000 82 1.63 19.9
12200 88 1.45 16.5 <- -3dB point
15000 88 1.25 14.2
20000 63 0.57 9.05
Fig 6.6.3(a)

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Results of A v Measurement at -3dB Points and Various Frequencies

25

20
Gain (V out/V in)

15

10

5
Cascode Amplifier

0
0.01 0.1 1 10 100 1000 10000 100000
Frequency (kHz)

Fig 6.6.3(b)

f L = 210 Hz and f H = 12.2 MHz , and

Using this data, we can determine that our -3dB points lie at
therefore we know that our bandwidth is 12.2 MHz − 210 Hz ≈ 12.2 MHz we also know that our
midband gain is 16.5 V/V.

Experiment 6.7

We will now construct a CC-CB amplifier to compare with the previous cascade amplifier we analyzed in
experiment 6.6. The schematic for the CC-CB amplifier is shown below in Figure 6.7.1.
Note that we will be using the 2N3393 discrete transistors that were used in experiment 6.6.

CC-CB Amplifier Schematic

Vcc
Given Values
VCC = 15V
R 5
R 3
VA=5V
R 1 VB=5V
Q 1 Vout
C 1 2N 3933 VODC=10V
Q 2 ICQ1=1mA
2N 3933 C 2
IR5=1mA
0 C1=C2=10µF
Vs
Va Vb C3=47µF
Solved For Values
R 2 C 3 R 4

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R4=5KΩ
R2=5KΩ
R1=1MΩ
R3=1MΩ
IBQ1=IBQ2=6.6µA

Fig 6.7.1

We know that in DC bias mode, our circuit will behave like the circuit seen in Figure 6.7.2

CC-CB Amplifier in DC Bias Mode

Given Values
Vcc VCC = 15V
VA=5V
VB=5V
R 5
R 3 VODC=10V
R 1
Q 1 Vout
ICQ1=1mA
2N 3933 IR5=1mA
Q 2 C1=C2=10µF
2N 3933
C3=47µF
Solved For Values
Va Vb R4=5KΩ
R 2 R 4 R2=5KΩ
R1=1MΩ
R3=1MΩ
0
IBQ1=IBQ2=6.6µA

Fig 6.7.2
Now we need to solve for some unknown values in our schematic using the DC bias mode schematic
(Figure 6.7.2).

We know that VB=5V and IR5=1mA and therefore IR4=1mA if we neglect base current, so we can solve for
the resistance of R4
VB 5V
R4 = = = 5 KΩ
I R 4 1mA

We can also solve for R2 in the same fashion.

VA 5V
R2 = = = 5 KΩ
I R 2 1mA

We also know that VBQ1 and VBQ2 are both 5V+.7V=5.7V because of VBE=.7V so we can solve for both R1
and R3 by first solving for IBQ1 and IBQ2.
I C 1mA
I BQ1 = I BQ 2 = = = 6.6 µA
β 150
We can now solve for R1 and R3.
VCC − VBQ 15V − 5.7V
R1 = R3 = = = 1.4 MΩ ≈ 1MΩ
I BQ 6.6 µA

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We will now measure our peak to peak voltage gain over various frequencies just as we did in experiment
6.6. Once again, our input voltage is the positive terminal of V S and our Vout terminal is shown on Figure
6.7.1. Our results are shown in Figures 6.7.3(a)&(b).

Results of Av Measurement at -3dB Points and Various Frequencies

Frequency (kHz) vin (mV pk->pk) vout (V pk->pk) Gain (Vout/Vin)

0.02 108 2.69 24.9
0.095 113 9.02 79.8 <- -3dB point
0.1 108 9.33 86.4
1 109 12.31 112.9 <- Midband Gain
10 113 12.31 108.4
100 117 12.3 105.1
1000 128 10.78 84.22
1310 113 9.02 79.8 <- -3dB point
2000 135 8.65 64.1

Fig 6.7.3(a)

Results of A v Measurement at -3dB Points and Various Frequencies

120

100

80
Gain (V out/Vin )

60

40

20
CC-CB Amplifier

0
0.01 0.1 1 10 100 1000 10000
Frequency (kHz)

Fig 6.7.3(b)
f L = 95 Hz and f H = 1.31MHz , and
Using this data, we can determine that our -3dB points lie at
therefore we know that our bandwidth is 1.31MHz − 95 Hz ≈ 1.31MHz we also know that our
midband gain is 79.8 V/V.

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EE3101 LA B R EP ORT EXP #6 06 DE C
2006
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Experiment 6.8

From the former experiments we can notice that the larger the gain will be, the smaller the bandwidth turns
out to be. If we multiply our midband gain by out bandwidth, we can obtain a measurement called the gain-
bandwidth product. This measurement is the relative effectiveness of the amplifier. Since we already know
we can sacrifice one quality for the other, the gain-bandwidth product will tell the amount of both qualities
we can have. Figure 6.8.1 is a set of the results of the previous experiments.

Previous Results and Calculated Gain-Bandwidth Products.

Cascode CC-CB
Midband Gain 23.3 112.9
Bandwidth 12.2M 1.31M
Gain-Bandwidth Product 284.2M 237.1M
Fig 6.8.1

284.2M − 237.1M
Our percent deviation is 100 x = 16%
284.2 M
We can see that the gain-bandwidth product of the cascode amplifier was larger, this means that the cascade
amplifier was slightly more efficient than the CC-CB amplifier. The main idea, however, is that even
though the basic schematics of the circuit were different, we can see a similar trade off in gain and
bandwidth.

Conclusion

First we calculated β as 287 of the common-emitter amplifier. We then obtained three equations
relating the unknown values of the Hybrid-π Model and the cutoff frequencies that were gathered at the
3dB (70.7%) point through modifying the CE amplifier with three different composition. We added a
capacitor parallel with C µ to change the effect of the capacitance, and then changed the value of RL to see
the effect of the load resistance and the break frequency. From a calculation using a matrix of the three
equations, with the three unknown values, we got Cπ = 11.5 pF , C µ = 3 pF , rπ = 28.0 KΩ as a
result. The values of Cπ and C µ seem to reasonable values, however, rπ was bigger than expected. We
know this because when we calculate rx it turns out to be a negative value (-20KΩ) which isn’t possible.

Next we measured the voltage gain of the cascode amplifier design and the CC-CB amplifier
design. With the voltage gain we were able to calculate the break frequency of the amplifiers and the
bandwidth of them. By comparing the data of the two, we were able to check the inverse proportional
relationship between the midband gain and bandwidth. See Figure 6.8.1 for comparison of the two different
amplifiers. With an amplifier that has a greater gain; it is hard to expect a large bandwidth. When designing
an amplifier we must consider the trade off of the two core aspects within the amplifier.

We have successfully gathered the information on how to interpret the high frequency response of
the Hybrid-π Model and characteristic of the model. This information should be used on further amplifiers’
analysis and designing projects to gather more accurate results.

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