Академический Документы
Профессиональный Документы
Культура Документы
August 2004
FDS7088SN3
30V N-Channel PowerTrench SyncFET
General Description
The FDS7088SN3 is designed to replace a single SO-8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7088SN3 includes an integrated Schottky diode using Fairchilds monolithic SyncFET technology. The performance of the FDS7088SN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7088N3 in parallel with a Schottky diode.
Features
21 A, 30 V RDS(ON) = 4.0 m @ VGS = 10 V RDS(ON) = 4.9 m @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
DC/DC converter Motor drives
5 6 7 8
4 3 2 1
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
C/W C/W
FDS7088SN3
Electrical Characteristics
Symbol Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) VGS = 0 V, ID = 1 mA ID = 15 mA, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 1 mA ID = 15 mA, Referenced to 25C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 10 V, ID = 21 A ID = 19 A ID = 21 A, TJ = 125C ID = 21 A 1 1.5 3 3.4 4.0 5 85 4.0 4.9 30 28 500 100 3 V mV/C A nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance Forward Transconductance
V mV/C m
gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd IS VSD tRR QRR
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
pF pF pF 32 34 72 53 80 44 ns ns ns ns nC nC nC nC
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time
20 21 45 33
Total Gate Charge at VGS=10V Total Gate Charge GateSource Charge GateDrain Charge
ID = 10 A ID = 10 A
57 31 8 10
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
b)
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS7088SN3 Rev B (W)
FDS7088SN3
Typical Characteristics
60
2 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 3.5V 4.0V 4.5V 5.0V 6.0V 10V VGS = 3.5V
40
4.5V
20
2.5V
10
50
60
ID = 10.5A
0.01
1.2
0.008
TA = 125 C
o
0.006
0.8
0.004
TA = 25 C
o
20 10 0 1.5 1.75
-55 C
25oC
0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7088SN3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 21A 8 20V CAPACITANCE (pF) VDS = 10V 6 15V 4 4000 5000 f = 1MHz VGS = 0 V
3000
Ciss
RDS(ON) LIMIT
100
1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25 C
o
100s
40
10
30
20
0.1
10
0.01 0.01
100
0 0.01
0.1
100
1000
1.00
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
0.10
0.01
0.01
SINGLE PULSE
0.00 0.0001
0.001
0.01
0.1
t1, TIME (sec)
10
100
1000
FDS7088SN3
TA = 125 C
0.01
0.001
TA = 100oC
0.08A/div
0.0001
TA = 25oC
12.5 nS/div
Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature
0.08A/div
12.5 nS/div
FDS7088SN3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx FAST ActiveArray FASTr Bottomless FPS CoolFET FRFET CROSSVOLT GlobalOptoisolator DOME GTO EcoSPARK HiSeC E2CMOS I2C EnSigna i-Lo FACT ImpliedDisconnect FACT Quiet Series
ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC Across the board. Around the world. OPTOPLANAR PACMAN The Power Franchise POP Programmable Active Droop
Power247 PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SerDes SILENT SWITCHER SMART START SPM Stealth
SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET VCX
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11