AUTOMOTIVE GRADE

PD-96391A

AUIRFZ44NS AUIRFZ44NL
HEXFET Power MOSFET
D

Features
l l l l l l l l l

Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

V(BR)DSS

55V 17.5m
49A

G S

RDS(on) max.
ID

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
S G G D S

D2 Pak AUIRFZ44NS

TO-262 AUIRFZ44NL

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS (Thermally Limited) EAS (tested) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value

Max.
49 35 160 3.8 94 0.63 20 150 530 25 9.4 5.0 -55 to + 175 300 (1.6mm from case )

Units
A W W/C V mJ A mJ V/ns C

Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient

Typ.

Max.
1.5 40

Units
C/W

HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/

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Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

Min.
55 2.0 19

Typ.
0.058

Max.
17.5 4.0 25 250 100 -100

Units
V m V S A nA

Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 25A VDS = 25V, ID = 25A

V/C Reference to 25C, ID = 1mA VDS = VGS, ID = 250A VDS =55V, VGS = 0V VGS = 20V VGS = -20V

VDS = 44V, VGS = 0V, TJ = 150C

Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance 12 60 44 45 4.5 7.5 1470 360 88 63 14 23 pF nH ns nC ID = 25A VDS = 44V VGS = 10V,See Fig 6 and 13 VDD = 28V ID = 25A RG = 12 VGS = 10V, See Fig.10 Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig.5

f
D G S

Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Min.

Typ.
63 170

Max.
49

Units
A showing the integral reverse

Conditions
MOSFET symbol
G S D

160 1.3 95 260 V ns nC

p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V TJ = 25C, IF = 25A di/dt = 100A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 0.48mH, RG = 25, IAS = 25A. (See Figure 12) ISD 25A, di/dt 230A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C .

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Qualification Information
Automotive (per AEC-Q101) Qualification Level

Comments: This part number(s) passed Automotive qualification. IRs Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-D2 PAK 3L-TO-262 MSL1 N/A Class M3(+/- 400V ) (per AEC-Q101-002) Class H1B(+/- 1000V ) (per AEC-Q101-001) Class C5(+/- 2000V ) (per AEC-Q101-005) Yes

Moisture Sensitivity Level

Machine Model ESD Human Body Model Charged Device Model RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage

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AUIRFZ44NS/L
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP

1000

I , Drain-to-Source Current (A) D

100

I , Drain-to-Source Current (A) D

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP

100

10

4.5V

4.5V
10

1 0.1

T = 25C TJC = 25C

1 10

20s PULSE WIDTH A

100

VDS , Drain-to-Source Voltage (V)

1 0.1

20s PULSE WIDTH TC = 175C J = 175C

1 10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.5

R DS(on) , Drain-to-Source On Resistance (Normalized)

I D = 41A

I D , Drain-to-Source Current (A)

2.0

100

TJ = 25C TJ = 175C

1.5

1.0

10

0.5

1 4 5 6 7

V DS = 25V 20s PULSE WIDTH

8 9 10

0.0 -60 -40 -20 0 20 40 60

VGS = 10V

80 100 120 140 160 180

VGS , Gate-to-Source Voltage (V)

TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

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2500

2000

Ciss

1500

Coss
1000

V GS , Gate-to-Source Voltage (V)

V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd

20

I D = 25A V DS = 44V V DS = 28V

16

C, Capacitance (pF)

12

500

Crss

0 1 10 100

0 0 10 20 30

FOR TEST CIRCUIT SEE FIGURE 13

40 50 60 70

VDS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000

1000

ISD , Reverse Drain Current (A)

OPERATION IN THIS AREA LIMITED BY R DS(on)

100

I D , Drain Current (A)

100

10s

TJ = 175C

100s 10

10

TJ = 25C

1ms

1 0.5 1.0 1.5 2.0

VGS = 0V
2.5

3.0

1 1

TC = 25C TJ = 175C Single Pulse

10

10ms

100

VSD , Source-to-Drain Voltage (V)

VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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AUIRFZ44NS/L
50

V DS
40

RD

V GS RG

ID , Drain Current (A)

D.U.T.
+

-V DD

30

V GS
20
Pulse Width 1 s Duty Factor 0.1 %

10

Fig 10a. Switching Time Test Circuit

25 50 75 100 125 150 175

TC , Case Temperature ( C)

VDS 90%

Fig 9. Maximum Drain Current Vs. Case Temperature

10% VGS
td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

10

Thermal Response (Z thJC )

D = 0.50 0.20 0.10 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1

0.1

0.05 0.02 0.01

0.01 0.00001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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500

EAS , Single Pulse Avalanche Energy (mJ)

TOP
400

15V

BOTTOM

ID 10A 18A 25A

VDS

DRIVER

300

RG
20V

D.U.T
IAS tp

+ - VDD

200

0.01

100

Fig 12a. Unclamped Inductive Test Circuit

VDD = 25V
25 50 75 100 125 150

175

Starting TJ , Junction Temperature (C)

V(BR)DSS tp

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

I AS
12V

Current Regulator Same Type as D.U.T.

50K

Fig 12b. Unclamped Inductive Waveforms

.2F .3F

D.U.T. VGS
3mA

+ V - DS

QG

VGS
QGS VG QGD

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Charge

Fig 13a. Basic Gate Charge Waveform

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Peak Diode Recovery dv/dt Test Circuit
+

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

D.U.T*

RG dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ V DD

VGS

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive P.W. Period D=

P.W. Period

[ VGS=10V]

***

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

[VDD ]

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

[ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET power MOSFETs

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D2Pak Package Outline (Dimensions are shown in millimeters (inches))

D2Pak Part Marking Information

Part Number

AUFZ44NS

IR Logo

YWWA
XX or XX

Date Code Y= Year WW= Work Week A= Automotive, Lead Free

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRFZ44NS/L
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))

TO-262 Part Marking Information

Part Number

AUFZ44NL

IR Logo

YWWA
XX or XX

Date Code Y= Year WW= Work Week A= Automotive, Lead Free

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10

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D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)

TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)

1.60 (.063) 1.50 (.059)

0.368 (.0145) 0.342 (.0135)

FEED DIRECTION 1.85 (.073)

1.65 (.065)

11.60 (.457) 11.40 (.449)

15.42 (.609) 15.22 (.601)

24.30 (.957) 23.90 (.941)

TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)

FEED DIRECTION

13.50 (.532) 12.80 (.504)

27.40 (1.079) 23.90 (.941)

4

330.00 (14.173) MAX.

60.00 (2.362) MIN.

NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

30.40 (1.197) MAX.

26.40 (1.039) 24.40 (.961) 3

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Ordering Information
Base part AUIRFZ44NL AUIRFZ44NS Package Type TO-262 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 800 800 AUIRFZ44NL AUIRFZ44NS AUIRFZ44NSTRL AUIRFZ44NSTRR

12

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IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IRs Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105

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