Chih-Wei Chu

Tel: +886+2+27898000X70 Fax: +886+2+26026680 Education: Ph. D., Material Sciences and Engineering, University of California, Los Angeles Title: Assistant Research Fellow Email: gchu@gate.sinica.edu.tw Webpage: Assistant Research Fellow, Research Center for Applied Sciences, Academia Sinica (2006-present) Adjunct Assistant Professor, Department of Photonics, National Chiao Tung University (2007-present) Research Engineer, Department of Research and Development, Inteplast Group, Ltd (1998~2001) Selected Publications 1. Dhananjay, Chun-Wei Ou and and Meng-Chyi Wu, Zhong Yo and Kuo-Chuan Ho, Shih-Wei Lee, and Chih-Wei Chu Complementary Inverter circuits based on p-SnO2 and n-In2O3 thin film transistors Appl. Phys. Lett. 2008 (Accepted). Chuan-Yi Yang, Dhananjay, Shiau-Shin Cheng, Chun-Wei Ou, You-Che Chuang, Meng-Chyi Wu, and Chi-Wei Chu Balancing the Ambipolar Conduction for Pentacene Thin Film Transistors Through Bi-Functional Electrodes Appl. Phys. Lett. 2008 (Accepted). 3. Bang-Ying Yu, Ating Tsai, Shu-Ping Tsai, Ken-Tsung Wong, Yang Yang, Chih-Wei Chu, and Jing-Jong Shyue Efficient Inverted Solar Cells Using TiO2 Nanotube Arrays Nanotechnology 2008 (Accepted).

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BangYing Yu, YingYu Chen, WeiBen Wang, MaoFeng Hsu, ShuPing Tsai, WeiChunLin,YuChinLin,JwoHueiJou,ChihWeiChu,andJingJongShyue "Depth Profiling of Organic Films with Xray Photoelectron Spectroscopy UsingC60+andAr+CoSputtering"AnalyticalChemistry(inpress). Chuan-Yi Yang, Dhananjay, Shiau-Shin Cheng, Chun-Wei Ou, You-Che Chuang, Meng-Chyi Wu, Chih-Wei Chu Realization of ambipolar pentacene thin film transistors through interfacial engineering J. Appl. Phys., 2008 (in press). Dhananjay, Shiau-Shin, Cheng, Chuan-Yi Yang, Chun-Wei Ou, You-Che Chuang, Meng-Chyi Wu, and Chih-Wei Chu Dependence of channel thickness on the performance of In2O3 thin film transistors J. Phys. D: Appl. Phys. 41, 092006 (2008).

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Chun-Wei Ou, Dhananjay, Zhong Yo, You-Che Chuang, Shiau-Shin Cheng, Meng-Chyi Wu, kuo-Chuan Ho, and Chih-Wei Chu Anomalous p-channel amorphous oxide transistors based on Tin Oxide and their complementary circuits Appl. Phys. Lett. 92, 122113 (2008).

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Chih-Wei Chu, Hoichang Yang, Wei-Jen Hou, Jinsong Huang, Gang Li, and Yang Yang Control of the nanoscale crystallinity and phase separation in polymer solar cells Appl. Phys. Lett. 92, 103306 (2008).

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Shiau-Shin Cheng, Chuan-Yi Yang, Chun-Wei Ou, You-Che Chuang, and Meng-Chyi Wu, Chih-Wei Chu Pentacene thin film transistor with PVP-capped high-k MgO dielectric grown by reactive evaporation Electrochem. Solid-State Lett., 11, H118 (2008)

10. Chih-Wei Chu*, Chao-Feng Sung, Yuh-Zheng Lee, Kevin Cheng Improved performance in n-channel organic thin film transistors by nanoscale interface modification Organic electronics, 9, 262 (2008). 11. Dhananjay and Chih-Wei Chu Realization of In2O3 thin film transistors through reactive evaporation process Appl. Phys. Lett. 91, 132111 (2007). 12. Sheng-han li , Zheng Xu , Chih-Wei Chu , Liping Ma, Yang Yang Achieving Ambipolar Vertical Organic Transistors via Nano-Scale Interface Modification Appl. Phys. Lett. 91, 083507 (2007).

Research highlights Development of high performance organic and metal oxide field-effect transistors (1) Organic Field-Effect Transistors We have developed high performance lateral and vertical type organic field-effect transistors. The development of planar-type organic field-effect transistors focused on the ambipolar conduction through dual interfacial modification The development of vertical-type organic field-effect transistors focused on the specific device structure fabrication, and its high speed, high frequency, and the capability of operating both in voltage and current injection mode. (1-1) Lateral-Type Organic Field- Effect Transistors Organic materials are typically regarded as operating either p- or n-type unipolar conduction. We utilized a typical p-type material pentacene as the active layer, and ambipolar conduction can be achieved through dielectric/organic and organic/electrode dual interfacial modification. The dielectric/organic interfacial modification utilizes a hydroxyl-free layer to reduce the traps and facilitate electron accumulation, and the organic/electrode interfacial modification was achieved by inserting an ultra-thin nanoscale chemical compound between organic semiconductor and also by employing proper work function electrodes. Complementary technology is an important part of CMOS technology, and hence the inverter circuits were constructed and their performance was tested through voltage transfer curves.

(1-2) Vertical-Type Organic Field- Effect Transistors In order to increase the operation speed and frequency, we adopted a specific device structure, namely, vertical organic field-effect transistor. Our vertical-type organic triodes comprise two back to back Schottky diodes, and can be fabricated on various

substrates. The vertical triode can not only be operated in voltage-bias mode but it also can be worked in current-injection mode. The vertical triodes have two operation mechanisms: common-base and common-emitter mode, which is similar to that of bipolar junction transistor. The advantages of vertical triodes are high work speed, high operation frequency, and low operation voltage.

(2) Metal Oxide Thin Film Transistors The current research is focused on metal oxide thin film transistors. Compared to their organic counterparts, the metal oxides such as In2O3 and SnO2 were well known for their high mobility and optical transparency. The superior properties make them promising candidates for the display technology. Keeping in view of such applications, TFTs of In2O3 and SnO2 have been fabricated by simple processes such as reactive evaporation. High performance TFTs were also combined to form an inverter like circuits, which are the basic building blocks of most of the display circuits. Low processing temperatures of these devices make them emerging candidates for the flexible electronics. The present investigations also focus on the flexible and low voltage transistors for low-power electronics using high K dielectrics.

Organic solar cells The performance of the polymer solar cells, blending regioregular poly(3-hexylthiophene) (RR-P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) as photoactive layer, can be enhanced significantly via different annealing processes. However the electron mobility in pristine PCBM ( e = 2 10 7 m 2V 1s 1 ) is found to be about one orders of magnitude higher than the hole mobility measured in the pristine RR-P3HT ( h = 3 10 8 m 2V 1 s 1 ). We incorporated a series of hole collector layers (HCLs) with pore structure to construct polymer-fullerene solar cells. The HCLs with pore structure can offer large interface to enhance hole collection; however, the series resistances are also increased by the relatively pore morphology. Photovoltaic device with the largest short circuit current (Jsc) and efficiency is achieved using poly(3,4-propylenedioxythiophene) (PProDoT) as HCLs due to its highly porous structure and reasonable series resistance. By further optimizing the thickness of the HCLs in the solar cell, a power efficiency of 3.57 % under simulated sun light is achieved.