Hi ngh ton quc v iu khin v T ng ho - VCCA-2011

VCCA-2011
Cm bin ho hc hot ng trn c s sng m b mt v ng dng
o m
Chemical sensors based on surface acoustic wave and its application for
humidity measurement
Hong S Hng, Trn Mnh H, Trn Th Thu Dung
B mn K Thut o v Tin Hc CN-Vin in-Trng HBK H Ni
e-Mail: honghs-see@mail.hut.edu.vn


Tm tt
Bi bo gii thiu nguyn l v cu to ca mt loi
cm bin ho hc mi hot ng trn c s sng m
b mt (SAW) ca vt liu p in. ng thi qua
pht trin mt cm bin o m trn c s sng b
mt s dng vt liu p in mng mng AlN ph
trn silicon. Vt liu nhy c s dng l oxit
kim loi ZnO. Kt qu o cho thy cm bin c
nhy cao (theo dch tn s) l khong 220 kHz
tng ng vi m thay i t 10 n 90% RH. Bn
cnh , s nh hng ca nhit n cm bin
cng c kho st v nh gi.
Abstract:
In this work, the novel chemical sensors based on
surface acoustic wave (SAW) of a piezoelectric
material layer were introduced. The principle and
structure of these sensors also were investigated.
Thus, the SAW humidity sensor using ZnO sensing
layers grown on the AlN/Si substrate were fabricated.
Some experimental results showed that the largest
shift in the frequency response of the SAW humidity
sensor was at approximately 220 kHz for humidity
range from 10 to 90% RH. Besides, the effect of
temperature on to the properties of the SAW humidity
sensor also were discussed and reported.
K hiu
K hiu n v ngha
V
SAW
m/s Vn tc sng b mt
f MHz Tn s cng hng
m Bc sng
T C Nhit
E V Trng in
Hng s in mi
S/m dn in
m Gram Khi lng
N/m
2
p sut
V
0
m/s vn tc sng ban u

Ch vit tt
SAW Surface acoustic wave
IDT Inter-digital transducer
SEM Scanning electron microscope
AlN Aluminum nitride
ZnO Zinc oxide
RH Relative humidity

1. Gii thiu chung
Hin ti cc phng php o cc thng s mi trng
nh nng cht kh, nhit v m v ang
c nghin cu rng ri Vit nam v th gii. iu
l bi v cc yu t mi trng ni chung v m
ni ring nh hng nhiu n cc lnh vc khc nhau
trong i sng nh sn xut nng nghip, thc phm,
mi trng, y t..vv. Mt s phng php o kh hoc
m truyn thng ang c s dng bao gm: cm
bin kiu thay i in tr, in dung v da trn s
thay i ca tn s cng hng ca b dao ng thch
anh [1,2]. Vt liu nhy c th l cc oxit kim loi c
cu trc nano. So vi cc phng php trn th cm
bin o mi trng da trn c s sng m b mt
(SAW-surface acoustic wave) c chng minh c
nhiu u im v nhy cao, nh, nh, tin cy
cao v c kh nng ch to cm bin khng dy [3].
Trn c s mt s nhm nghin cu trn th gii
ch to v ng dng cm bin SAW o kh nh
CO
2
, NO
X
[3,4] v m nh [5,6]. Tuy nhin i
vi cc cm bin o m kiu SAW c nghin
cu th vt liu nhy c s dng ch yu l cc
polimer tng hp [5,6]. Theo bi bo ny tm hiu
v gii thiu chung v cm bin SAW ng thi
nghin cu v pht trin mt cm bin o m mi
trn c s sng m b mt s dng vt liu nn p
in l AlN ph trn silicon truyn thng. Lp vt
liu nhy l kiu mng a tinh th oxit kim loi dng
ht xp kch thc nano (nanocrystalline ZnO). Cm
bin c ch to theo phng php quang khc v n
mn thng thng. Cu trc b mt ca cm bin
c kim tra bng phng php chp nh b mt
SEM v mt s phng php o phn tch vt l khc
(nhiu x tia X). Mi trng m thay i t 10 n
90% RH c to bng cc p sut hi bo ho thng
qua cc dung dch mui ng trong bnh o kn nh
K
2
CO
3
(to 30 % or 50 % RH relative humidity),
CuSO
4
.5H
2
O (for 70 % and 90 % RH), v cht ht m
(desiccant) v khng kh kh (to 10 % RH). m
mi trng o c xc nhn li thng qua mt my
o m c chnh xc cao c bn sn trn th
trng.

2. Kt qu v tho lun
2.1 Cu to cm bin
Mt cm bin SAW c nhiu kiu cu trc khc nhau.
Tuy nhin trong bi bo ny ch tp trung vo cu trc
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Hi ngh ton quc v iu khin v T ng ho - VCCA-2011

VCCA-2011
n gin nht l delay-line. Cu to cm bin c
trnh by nh hnh 1. Chng gm c lp vt liu mng
mng c tnh cht p in (piezoelectric) ph ln mt
silicon. Hai b chuyn i tn hiu (IDT) lm bng
kim loi c ph ln trn mt vt liu c tnh cht
p in. Mi IDT c cu trc gm h thng hai bn
cc hnh rng lc an xem vo nhau v cch li vi
nhau. Ty theo loi kh hoc m mun nhn bit,
loi vt liu nhy c tnh cht nhy tng ng c
ph vo khong gia ca hai IDT. Trong nghin cu
ny cm bin m SAW c tc gi thit k theo
cu trc nh trn vi cc thng s c th nh sau: cc
IDTs c ch to bng nhm ph trn p in lm
bng vt liu AlN/Si (c dy h = 1 m). Phng
php bc bay nhit v n mn kim loi c s
dng sn xut cc IDT vi dy khong 100 nm
v khong cch gia cc ngn tay bng rng ca
mi ngn tay l d = 10 m. chng gia hai bn
cc ca IDT l W = 4000 m. Khong cch gia hai
IDT l L = 5 mm. Lp nhy vt liu nhy m ZnO
c sn xut bng phng php ho hc sol-gel v
ph ln ton b b mt ca cu trc bng phng
php ph quay li tm v gia nhit li ti nhit cao
ln lt ti 400, 500 v 600 C trong vng 1 h vi
chiu dy xp x t = 250 nm.


(a)

(b)

(c)
H. 1 Cu trc ca cm bin: (a) hnh chiu cnh, (b) hnh
chiu bng v (c) cm bin SAW m

2.2 Nguyn l hot ng ca cm bin
Khi cp cho IDT th nht mt in p xoay chiu,
theo tnh cht ca vt liu p in th in p s
lm cho vt liu b bin dng v nng lng in s
bin i thnh nng lng c di dng mt dao ng
c hc. Cc dao ng c di tc dng ca dao ng
in s lan truyn vi mt vn tc no (V
SAW
, ph
thuc vo vt liu p in) trn b mt ca phin p
in, sng ny cn gi l sng Raleigh (hnh 2).
Cc dao ng c ny lan truyn ti phn chuyn i
tn hiu IDT th hai v tc ng ln phn ny. Ti y
theo nguyn l ca hiu ng p in thun, nng
lng ca dao ng c c IDT chuyn i li thnh
nng lng in. Nh vy, c tnh ca cm bin
SAW c biu hin qua vn tc sng b mt (V
SAW
)
v suy hao nng lng sng thng qua vic so snh
tn hiu vo v ra t hai b phn chuyn i IDT
tng ng.

H.2 Sng b mt Raleigh trn cu trc SAW
Mt khc nng lng in t b IDT th hai li tip
tc chuyn i ngc thnh nng lng sng c v
lan truyn theo chiu ngc li s cng hng vi
sng b mt theo chiu thun ti mt tn s cng
hng f xc nh.
Theo nguyn l trn, khi cc tc nhn ha hc nh cc
phn t kh hoc hi m tng tc vi b mt ca lp
vt liu nhy gia hai b chuyn i IDT s gy ra
mt s thay i tc truyn sng v suy hao
nng lng sng so vi trng hp khng c cc tc
nhn ha hc tc dng vo. S thay i l do cc
tc nhn ha hc lm thay i mt s tnh cht ca
vt liu nhy nh khi lng, dn hay nht v
h qu l lm thay i c tnh ca sng truyn trn
b mt ca cm bin. T s thay i , chng ta s
thit lp c mi lin h gia vn tc sng b mt
hay suy hao vi cc tn hiu cn o nh nng
kh hay hi m. Nhn chung, sng Raleigh rt nhy
vi cc tc nhn b mt, do cc cm bin ha hc
da trn c tnh SAW c nhy rt cao.
Nh vy, di cc tc nhn nh hng n c tnh
ca SAW th vt liu nhy v p in dng vai tr
quan trng trong vic quyt nh tnh cht ca cm
bin ha hc kiu SAW. Vn tc sng b mt (V
SAW
)
c o thng qua o tn s cng hng (f) v bc
sng () ca cm bin SAW [7].

4
SAW
f f d
V
= = (1)

y tn s cng hng f c o bng mt network
analyzer [7], d l rng ca cc thanh IDT nh hnh
1(b).

2.3 Cm bin SAW o m s dng cu trc
ZnO/AlN/Si
Hnh 3 (a,b,c) ch ra cu trc b mt ca vt liu nhy
ZnO c ch to thng qua phng php nhit nung
li ti cc nhit 400, 500 v 600 C. B mt ca
lp nhy xit kim loi c cu trc dng ht v xp vi
kch thc khong 19.23, 29.13 and 43.8 nm tng
ng vi nhit nung 400, 500 v 600 C. Cu trc
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Hi ngh ton quc v iu khin v T ng ho - VCCA-2011

VCCA-2011
ny c chng minh thch hp cho vic ht m
[8]. Trong khi b mt ca lp vt liu p in
(AlN/Si) khng c cu trc dng ht xp (hnh 3d) v
kch thc ht b mt ln hn. Mt s tnh cht khc
nh nh hng tinh th ca vt liu p in v lp
nhy c o bng phng php nhiu x tia X tm
thi cha tho lun bi bo ny.

(a) (b)

(c ) (d)

H.3 nh b mt ca lp nhy ZnO ca cm bin SAW c
ch to ti nhit nung khc nhau: (a) 400 C, (b) 500 C,
(c) 600 C v (d) b mt lp p in AlN.
Hnh 4 ch ra kt qu th nghim ca cm bin SAW
vi cu trc ZnO/AlN/Si theo s thay i m t 10
n 90% RH. Trong dch tn s (frequency
shift) chnh l f = f-f0, y f0 l tn s cng hng
ca cm bin ti m 10% RH v f l tn s cng
hng ca cm bin ti cad gi tr m t 10, 30,
50, 70 v 90% RH. Tn s cng hng f0 c th c
trng cho vn tc sng b mt VSAW theo nh cng
thc (1) c trnh by nh phn trn.


H.4 nh b mt ca lp nhy ZnO ca cm bin SAW c
ch to ti nhit nung khc nhau: (a) 400 C, (b) 500 C,
(c) 600 C v (d) b mt lp p in AlN.
Qua nhn thy rng vi mu cm bin c lp nhy
c nhit nung ti 400 C c dch gim tn s
cng hng ln nht (khong 220 kHz i vi m
t 10 n 90% RH). Kt qu ny l ln hn so vi 14
kHz i vi cm bin SAW s dng vt liu nhy
polyXIO [6] v 40 kHz vi trng hp vt liu nhy l
Meso-tetra porphyrin (TPPS
4
) [5]. Kt qu ny c
gii thch thng qua b mt ca vt liu nh hnh 3. Vi
mu nung ti 400 C th cc ht xp b mt c kch
thc b nht do vy din tch ring b mt tip xc
vi mi trng m l ln nht iu cho kt qu mu
400 C c nhy m ln nht. Mt khc c ch nhy
m ca cm bin c gii thch c th hn theo cng
thc (2) v (3) c bo co t cc nghin cu
trc y [8,9].
2
00
0
2 2( ) 2
Zn
H O O Zn OH Zn V e

+ + + + (2)
0
o o o o o o
c o
o oc o oo o o
A + A + A + A + A + A
A
~
| |
|
\ .
v v v v v v
T E m p
T E m p
v
v

(3)
T cng thc (2) chng ta thy rng khi cc phn t
hi nc c hp ph vo b mt dng ht xp hoc
l rng nh (kch thc c nanometer) ca lp nhy
ZnO, kt qu to ra cc in t t do. Do vy dn
in () ca lp nhy ph ln phng truyn sng
tng ln v ng thi khi lng (m) ca lp nhy
cng tng ln Theo t cng thc (3), vn tc
sng b mt (V) s b nh hng theo chiu hng
gim vn tc. Kt qu l tn s cng hng ca cm
bin SAW s b dch theo chiu gim.
Trn thc t v theo cng thc (3), vn tc sng b
mt SAW chu nh hng nhiu bi nhit mi
trng. nh gi vn ny tc gi chn mu cm
bin c nhit nung ti 500 C v duy tr iu kin
m khng i khong 30% RH. Nhit thay i
t khong 25 n 80 C bng mt hotplate nh hnh 5



H.5 H o m dng cm bin SAW vi nhit thay i
t 25 n 80 C
Kt qu o c trnh by nh trong hnh 6. R rng
rng tn s cng hng ca cm bin chu nh hng
nhiu bi nhit mi trng. Nhit tng th tn
s cng hng dch theo chiu gim cng ln. Tuy
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Hi ngh ton quc v iu khin v T ng ho - VCCA-2011

VCCA-2011
nhin trong khong nhit kho st, s thay i ca
tn s cng hng theo nhit l tng i tuyn
tnh. iu l c s xy dng mt thut ton
phn mm c chc nng loi tr sai s do nhit
nh hng n qu trnh o m s dng cm bin
SAW.


H.6 nh hng ca nhit n tn s cng hng ca
cm bin m SAW c nhit nung 500 C.

3. Kt lun
Nh vy, theo xu th pht trin cc cm bin mi da
trn cng ngh vt liu nano v micro nhm nng cao
nhy, ti u v kch thc ci tin cho cc h
thng o y sinh, ho hc hay mi trng. Tc gi
mnh dn tip cn, nghin cu loi cm bin ho hc
sng m b mt mi (SAW). Thc t cho thy c ch
nhy v hot ng ca cm bin l tng i phc
tp. Trong bi bo ny tc gi c gng chuyn ti mt
cch gi gn nht c th kt qu nghin cu ca mnh
thng qua nhiu ngun tham kho v th nghim ca
nhm. ng thi qua pht trin mt cm bin o
m mi vi cu trc ZnO/AlN/Si. Cng vic c
tin hnh ti phng th nghim NFS thuc trng i
hc Ulsan, Hn Quc kt hp vi kt qu thc
nghim ti phng th nghim o lng, b mn K
thut o, Vin in, Trng i Hc Bch Khoa H
Ni. Kt qu l cm bin mi c s ci thin nhy
ng k (220 kHz) so vi mt s cm bin khc cng
loi s dng polimer (b hn 40 kHz) lm lp nhy
m. S nh hng ca nhit n qu trnh lm vic
ca cm bin SAW cng c kho st. S ph
thuc tuyn tnh ca dch tn s cng hng theo
nhit 25 n 80 C l c s loi tr c sai s
theo nhit . Tuy nhin, hon thin c nghin
cu, mt s vn quan trng nh lp li, tr,
thi gian p ng v tin cy trong cc chu k thi
gian khc nhau phi c kho st k hn v cng b
trong nhng nghin cu tip theo.

Ti liu tham kho
[1] Traversa, E.: Ceramic sensor for humidity
detection: the state-of-the-art and future
development, Sens. Actuators B 135-156, 1995
[2] Wang, X.H.; Ding, Y.F.; Zhang, J.; Zhu, Z.Q.;
You, S.Z.; Chen, S.Q.; Zhu, J.: Sens. Actuators
B, 421427, 2006
[3] Wang, W.; Lee, K.; Kim, T.; Park, I.; Yang, S.:
A novel wireless, passive CO
2
sensor
incorporating a surface acoustic wave reflective
delay line, Smart Mater. Struct. 16, 13821389,
2007
[4] Penza, M.; Vasanelli, L.: SAW NO
x
gas sensor
using WO
3
thin-film sensitive coating, Sens.
Actuators B 41, 3136, 1997
[5] Rimeika, R.; Ciplys, D; Poderys, V; Rotomskis,
R.; Balakauskas, S.; Shur, M.S.: Subsecond-
response SAW humidity sensor with porphyrin
nanostructure deposited on bare and metallised
piezoelectric substrate, Elect. Let. 43 1047
1048, 2007
[6] Tashtoush, N.M; Cheeke, J.D.N.; Eddy, N.:
Surface acoustic wave humidity sensor based on
a thin PolyXIO film, Sens. Actuators B 49, 218
225,1998
[7] Hoang, S.H; Chung, G.S.: Surface acoustic
wave characteristics of AlN thin films grown on
a polycrystalline 3C-SiC buffer layer,
Microelect. Eng. 86, 21492152, 2009
[8] Tai, W.P.; Oh, J.H.: Humidity sensing behaviors
of nanocrystalline Al-doped ZnO thin films
prepared by sol-gel process, J. Mater. Sci:
Mater. Elect. 13, 391394, 2002
[9] Ricco, A.J; Martin, S.J: Thin metal film
characterization and chemical sensors:
monitoring electronic conductivity, mass
loading and mechanical properties with surface
acoustic wave devices, Thin Solid Films, vol.
206, pp. 94101, 1991

Biography
Tc gi Hong S Hng tt
nghip i hc v thc s
chuyn nghnh o lng iu
khin ti trng i Hc
Bch Khoa H Ni
(HBKHN) ln lt vo nm
1999 v 2001. Nm 2010 tc
gi tt nghip Tin S ti
trng i Hc Ulsan Hn
Quc. T 2002 n nay l
ging vin ti b mn K Thut o v Tin Hc Cng
Nghip thuc trng HBKHN. Lnh vc nghin cu
chnh hin nay ca tc gi l cm bin mi trng v
ho hc, thit b o thng minh v h thng SCADA,
DCS ng dng trong o v kim tra mi trng.

Tc gi Trn Mnh H tt
nghip i hc chuyn
nghnh o lng iu khin
ti i hc Bch Khoa H
Ni (HBKHN) vo nm
1999. Nay ang cng tc ti
V khoa hc v cng ngh
B cng thng. Hin ti anh
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Hi ngh ton quc v iu khin v T ng ho - VCCA-2011

VCCA-2011
l hc vin cao hc chuyn ngnh o lng thuc b
mn K thut o v tin hc cng nghip (KT v
THCN), Vin in, HBKHN. Lnh vc nghin cu
chnh hin nay ca tc gi l cm bin sng b mt v
thit b o lng thng minh.

Tc gi Trn Th Thu Dung tt
nghip i hc chuyn nghnh
o lng iu khin ti trng
i hc S phm k thut Hng
Yn nm 2010. Nay ang l hc
vin cao hc chuyn ngnh o
lng thuc b mn K thut o
v tin hc cng nghip (KT v
THCN), Vin in, HBKHN.
Lnh vc nghin cu chnh hin
nay ca tc gi l cm bin sng b mt v cc thit b
thng minh ng dng trong cc h thng o lng
iu khin t ng dn dng v cng nghip.
586